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Results: 1-25/38
Authors:
HSU L
ZEHENDER S
BAUSER E
HALLER EE
Citation: L. Hsu et al., PRESSURE-INDUCED SHALLOW DONOR TRANSFORMATIONS IN GALLIUM-ARSENIDE, Physical review. B, Condensed matter, 55(16), 1997, pp. 10515-10518
Authors:
CAPINSKI WS
MARIS HJ
BAUSER E
SILIER I
ASENPALMER M
RUF T
CARDONA M
GMELIN E
Citation: Ws. Capinski et al., THERMAL-CONDUCTIVITY OF ISOTOPICALLY ENRICHED SI, Applied physics letters, 71(15), 1997, pp. 2109-2111
Authors:
SCHIEBER M
LUND JC
OLSEN RW
MCGREGOR DS
VANSCYOC JM
JAMES RB
SORIA E
BAUSER E
Citation: M. Schieber et al., MATERIAL PROPERTIES AND ROOM-TEMPERATURE NUCLEAR-DETECTOR RESPONSE OFWIDE BANDGAP SEMICONDUCTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 492-495
Authors:
SILIER I
GUTJAHR A
BANHART F
KONUMA M
BAUSER E
SCHOLLKOPF V
FREY H
Citation: I. Silier et al., GROWTH OF MULTI-CRYSTALLINE SILICON ON SEEDED GLASS FROM METALLIC SOLUTIONS, Materials letters, 28(1-3), 1996, pp. 87-91
Authors:
MICHAELIS JS
UNTERRAINER K
GORNIK E
BAUSER E
Citation: Js. Michaelis et al., ELECTRIC AND MAGNETIC DIPOLE 2-PHOTON ABSORPTION IN SEMICONDUCTORS, Physical review. B, Condensed matter, 54(11), 1996, pp. 7917-7920
Authors:
OESTREICH M
HALLSTEIN S
HEBERLE AP
EBERL K
BAUSER E
RUHLE WW
Citation: M. Oestreich et al., TEMPERATURE AND DENSITY-DEPENDENCE OF THE ELECTRON LANDE G-FACTOR IN SEMICONDUCTORS, Physical review. B, Condensed matter, 53(12), 1996, pp. 7911-7916
Authors:
ALBRECHT M
CHRISTIANSEN S
MICHLER J
STRUNK HP
HANSSON PO
BAUSER E
Citation: M. Albrecht et al., LOCALLY VARYING CHEMICAL-POTENTIAL AND GROWTH SURFACE PROFILE - A CASE-STUDY ON SOLUTION-GROWN SI(GE) SI/, Journal of crystal growth, 167(1-2), 1996, pp. 24-31
Authors:
KONUMA M
SILIER I
GUTJAHR A
HANSSON PO
CRISTIANI G
CZECH E
BAUSER E
BANHART F
Citation: M. Konuma et al., CENTRIFUGAL TECHNIQUES FOR SOLUTION GROWTH OF SEMICONDUCTOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 234-238
Authors:
SILIER I
GUTJAHR A
NAGEL N
HANSSON PO
CZECH E
KONUMA M
BAUSER E
BANHART F
KOHLER R
RAIDT H
JENICHEN B
Citation: I. Silier et al., SOLUTION GROWTH OF EPITAXIAL SEMICONDUCTOR-ON-INSULATOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 727-730
Authors:
RAIDT H
KOHLER R
BANHART F
JENICHEN B
GUTJAHR A
KONUMA M
SILIER I
BAUSER E
Citation: H. Raidt et al., ADHESION IN GROWTH OF DEFECT-FREE SILICON OVER SILICON-OXIDE, Journal of applied physics, 80(7), 1996, pp. 4101-4107
Authors:
LAUTER J
BAUSER E
FORSTER A
HARDTDEGEN H
HOLLFELDER M
LUTH H
PROTIC D
ZEHENDER S
Citation: J. Lauter et al., EPITAXIAL GALLIUM-ARSENIDE FOR NUCLEAR RADIATION DETECTOR APPLICATIONS, Nuclear physics. B, 1995, pp. 381-385
Authors:
FARHOOMAND J
MCMURRAY RE
HALLER E
BAUSER E
SILIER I
Citation: J. Farhoomand et al., CHARACTERIZATION OF HIGH-PURITY GAAS FAR-INFRARED PHOTOCONDUCTORS, International journal of infrared and millimeter waves, 16(6), 1995, pp. 1051-1064
Authors:
DORSCH W
CHRISTIANSEN S
ALBRECHT M
HANSSON PO
BAUSER E
STRUNK HP
Citation: W. Dorsch et al., EARLY GROWTH-STAGES OF GE-0.85 SI-0.15 ON SI(001) FROM BI SOLUTION, Surface science, 333, 1995, pp. 896-901
Authors:
STRUNK HP
BAUSER E
Citation: Hp. Strunk et E. Bauser, BETHGE AND FRANK STEP SOURCES IN SOLUTION GROWTH OF GAAS, Physica status solidi. a, Applied research, 147(2), 1995, pp. 301-312
Authors:
KOHLER R
JENICHEN B
RAIDT H
BAUSER E
NAGEL N
Citation: R. Kohler et al., VERTICAL STRESS IN LIQUID-PHASE EPITAXY SI LAYERS ON SIO2 SI EVALUATED BY X-RAY DOUBLE-CRYSTAL TOPOGRAPHY/, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 50-55
Authors:
ALBRECHT M
CHRISTIANSEN S
MICHLER J
DORSCH W
STRUNK HP
HANSSON PO
BAUSER E
Citation: M. Albrecht et al., SURFACE RIPPLES, CROSSHATCH PATTERN, AND DISLOCATION FORMATION - COOPERATING MECHANISMS IN LATTICE MISMATCH RELAXATION, Applied physics letters, 67(9), 1995, pp. 1232-1234
Authors:
CHRISTIANSEN S
ALBRECHT M
STRUNK HP
HANSSON PO
BAUSER E
Citation: S. Christiansen et al., REDUCED EFFECTIVE MISFIT IN LATERALLY LIMITED STRUCTURES SUCH AS EPITAXIAL ISLANDS, Applied physics letters, 66(5), 1995, pp. 574-576
Authors:
KONUMA M
SILIER I
CZECH E
BAUSER E
Citation: M. Konuma et al., SEMICONDUCTOR LIQUID-PHASE EPITAXY FOR SOLAR-CELL APPLICATION, Solar energy materials and solar cells, 34(1-4), 1994, pp. 251-256
Authors:
ALBRECHT M
HANSSON PO
CHRISTIANSEN S
DORSCH W
STRUNK HP
BAUSER E
Citation: M. Albrecht et al., BALANCING SURFACE-ENERGY TERMS FOR STABLE GROWTH OF PLANAR SURFACES, Scanning microscopy, 8(4), 1994, pp. 925-934
Authors:
LEE SH
BERGMANN R
BAUSER E
QUEISSER HJ
Citation: Sh. Lee et al., SOLUTION GROWTH OF SILICON ON AL-SI COATED QUARTZ GLASS SUBSTRATES, Materials letters, 19(1-2), 1994, pp. 1-6
Authors:
HANSSON PO
ALBRECHT M
DORSCH W
STRUNK HP
BAUSER E
Citation: Po. Hansson et al., INTERFACIAL ENERGIES PROVIDING A DRIVING-FORCE FOR GE SI HETEROEPITAXY/, Physical review letters, 73(3), 1994, pp. 444-447
Authors:
GUSTAFSSON A
HANSSON PO
BAUSER E
Citation: A. Gustafsson et al., CATHODOLUMINESCENCE FROM RELAXED GEXSI1-X GROWN BY HETEROEPITAXIAL LATERAL OVERGROWTH, Journal of crystal growth, 141(3-4), 1994, pp. 363-370
Authors:
WEISHART H
BAUSER E
KONUMA M
QUEISSER HJ
Citation: H. Weishart et al., MONOMOLECULAR STEPS OF ULTRA-LOW DENSITY ON (100) GROWTH FACES OF LIQUID-PHASE EPITAXIAL GAAS, Journal of crystal growth, 137(3-4), 1994, pp. 335-346
Authors:
ASHWIN MJ
FAHY MR
NEWMAN RC
WAGNER J
ROBBIE DA
SANGSTER MJL
SILIER I
BAUSER E
BRAUN W
PLOOG K
Citation: Mj. Ashwin et al., A LOCAL VIBRATIONAL-MODE INVESTIGATION OF P-TYPE SI-DOPED GAAS, Journal of applied physics, 76(12), 1994, pp. 7839-7849
Authors:
ARCH JK
WERNER JH
BAUSER E
Citation: Jk. Arch et al., HALL-EFFECT ANALYSIS OF LIQUID-PHASE EPITAXY SILICON FOR THIN-FILM SOLAR-CELLS, Solar energy materials and solar cells, 29(4), 1993, pp. 387-396