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Results: 1-17 |
Results: 17
LIGHT-INDUCED DEFECTS IN AMORPHOUS SILICON-CARBON ALLOYS A-SIC-H
Authors: REJEB SH GARBI R FATHALLAHA M DEMICHELIS F PIRRI CF TRESSO E CROVINI G
Citation: Sh. Rejeb et al., LIGHT-INDUCED DEFECTS IN AMORPHOUS SILICON-CARBON ALLOYS A-SIC-H, Optical materials, 6(1-2), 1996, pp. 13-16
EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E RIGATO V COSCIA U AMBROSONE G CATALANOTTI S RAVA P
Citation: F. Demichelis et al., EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS, Solid state communications, 98(7), 1996, pp. 617-622
LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS)
Authors: FATHALLAH M GHARBI R CROVINI G DEMICHELIS F GIORGIS F PIRRI CF TRESSO E RAVA P
Citation: M. Fathallah et al., LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS), Journal of non-crystalline solids, 200, 1996, pp. 490-494
COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: GIORGIS F RAVA P GALLONI R RIZZOLI R SUMMONTE C CROVINI G DEMICHELIS F PIRRI CF TRESSO E RIGATO V
Citation: F. Giorgis et al., COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of non-crystalline solids, 200, 1996, pp. 596-600
CHARACTERIZATION OF THE EFFECT OF GROWTH-CONDITIONS ON A-SIC-H FILMS
Authors: RAVA P CROVINI G DEMICHELIS F GIORGIS F PIRRI CF
Citation: P. Rava et al., CHARACTERIZATION OF THE EFFECT OF GROWTH-CONDITIONS ON A-SIC-H FILMS, Journal of applied physics, 80(7), 1996, pp. 4116-4123
HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS, A-SINX-H-Y - A WIDE-BAND GAP MATERIAL FOR OPTOELECTRONIC DEVICES
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E
Citation: F. Demichelis et al., HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS, A-SINX-H-Y - A WIDE-BAND GAP MATERIAL FOR OPTOELECTRONIC DEVICES, Journal of applied physics, 79(3), 1996, pp. 1730-1735
POWDER DISSIPATION IN PECVD FOR SIH4-CH4-H-2 GAS-MIXTURES
Authors: RAVA P CROVINI G DEMICHELIS F GIORGIS F GALLONI R RIZZOLI R SUMMONTE C
Citation: P. Rava et al., POWDER DISSIPATION IN PECVD FOR SIH4-CH4-H-2 GAS-MIXTURES, Journal de physique. IV, 5(C5), 1995, pp. 1125-1132
OPTIMIZATION OF RELEVANT DEPOSITION PARAMETERS FOR HIGH-QUALITY A-SIC-H FILMS
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R RIZZOLI R SUMMONTE C RAVA P
Citation: F. Demichelis et al., OPTIMIZATION OF RELEVANT DEPOSITION PARAMETERS FOR HIGH-QUALITY A-SIC-H FILMS, Solar energy materials and solar cells, 37(3-4), 1995, pp. 315-321
COMPARISON BETWEEN METHANE AND ACETYLENE AS CARBON-SOURCES FOR C-RICHA-SIC-H FILMS
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E
Citation: F. Demichelis et al., COMPARISON BETWEEN METHANE AND ACETYLENE AS CARBON-SOURCES FOR C-RICHA-SIC-H FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 473-477
BORON AND PHOSPHORUS DOPING OF A-SIC-H THIN-FILMS BY MEANS OF ION-IMPLANTATION
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R SUMMONTE C RIZZOLI R ZIGNANI F RAVA P
Citation: F. Demichelis et al., BORON AND PHOSPHORUS DOPING OF A-SIC-H THIN-FILMS BY MEANS OF ION-IMPLANTATION, Thin solid films, 265(1-2), 1995, pp. 113-118
THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R RIZZOLI R SUMMONTE C ZIGNANI F RAVA P MADAN A
Citation: F. Demichelis et al., THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 377-386
STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF DOPED MICROCRYSTALLINE SILICON-CARBIDE FILMS
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E FANCIULLI M PIESARKIEWICZ T STAPINSKI T
Citation: F. Demichelis et al., STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF DOPED MICROCRYSTALLINE SILICON-CARBIDE FILMS, Semiconductor science and technology, 9(8), 1994, pp. 1543-1548
EFFECTS OF PRESSURE AND HYDROGEN DILUTION ON GAP-STATE DEFECTS IN A-SIC-H
Authors: GHARBI R CHINE Z FATHALLAH M DEMICHELIS F PIRRI CF TRESSO E CROVINI G
Citation: R. Gharbi et al., EFFECTS OF PRESSURE AND HYDROGEN DILUTION ON GAP-STATE DEFECTS IN A-SIC-H, Annales de chimie, 19(7-8), 1994, pp. 441-446
OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E AMATO G COSCIA U AMBROSONE G RAVA P
Citation: F. Demichelis et al., OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES, Thin solid films, 241(1-2), 1994, pp. 274-277
INFRARED VIBRATIONAL-SPECTRA OF HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON-CARBON ALLOYS - A COMPARISON OF THEIR STRUCTURE
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E
Citation: F. Demichelis et al., INFRARED VIBRATIONAL-SPECTRA OF HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON-CARBON ALLOYS - A COMPARISON OF THEIR STRUCTURE, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 68(3), 1993, pp. 329-340
ELECTRONIC DENSITY-OF-STATES IN A-SIC-H FILMS
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E AMATO G HERREMANS H GREVENDONK W RAVA P
Citation: F. Demichelis et al., ELECTRONIC DENSITY-OF-STATES IN A-SIC-H FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1015-1018
RELATIONS AMONG STRUCTURAL AND OPTOELECTRONIC PROPERTIES IN A-SIC-H FILMS WITH HIGH-C CONTENT AND HIGH PHOTOCONDUCTIVITY
Authors: LEO G GALUZZI G GUATTARI G VINCENZONI R DEMICHELIS F CROVINI G PIRRI CF TRESSO E
Citation: G. Leo et al., RELATIONS AMONG STRUCTURAL AND OPTOELECTRONIC PROPERTIES IN A-SIC-H FILMS WITH HIGH-C CONTENT AND HIGH PHOTOCONDUCTIVITY, Journal of non-crystalline solids, 166, 1993, pp. 1035-1038
Risultati: 1-17 |