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Results: 1-25 | 26-33
Results: 1-25/33
Design of single and multiple zone junction termination extension structures for SiC power devices
Authors: Sheridan, DC Niu, GF Cressler, JD
Citation: Dc. Sheridan et al., Design of single and multiple zone junction termination extension structures for SiC power devices, SOL ST ELEC, 45(9), 2001, pp. 1659-1664
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGeHBTs
Authors: Niu, GF Juraver, JB Borgarino, M Jin, ZR Cressler, JD Plana, R Llopis, O Mathew, S Zhang, SM Clark, S Joseph, AJ
Citation: Gf. Niu et al., Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGeHBTs, SOL ST ELEC, 45(1), 2001, pp. 107-112
RF linearity characteristics of SiGeHBTs
Authors: Niu, GF Liang, QQ Cressler, JD Webster, CS Harame, DL
Citation: Gf. Niu et al., RF linearity characteristics of SiGeHBTs, IEEE MICR T, 49(9), 2001, pp. 1558-1565
A unified approach to RF and microwave noise parameter modeling in bipolartransistors
Authors: Niu, GF Cressler, JD Zhang, SM Ansley, WE Webster, CS Harame, DL
Citation: Gf. Niu et al., A unified approach to RF and microwave noise parameter modeling in bipolartransistors, IEEE DEVICE, 48(11), 2001, pp. 2568-2574
Transistor noise in SiGeHBT RF technology
Authors: Niu, GF Jin, ZR Cressler, JD Rapeta, R Joseph, AJ Harame, D
Citation: Gf. Niu et al., Transistor noise in SiGeHBT RF technology, IEEE J SOLI, 36(9), 2001, pp. 1424-1427
Silicon-germanium heterojunction bipolar transistor
Authors: Cressler, JD
Citation: Jd. Cressler, Silicon-germanium heterojunction bipolar transistor, DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS, 2001, pp. 69-84
Design and fabrication of planar guard ring termination for high-voltage SiC diodes
Authors: Sheridan, DC Niu, GF Merrett, JN Cressler, JD Ellis, C Tin, CC
Citation: Dc. Sheridan et al., Design and fabrication of planar guard ring termination for high-voltage SiC diodes, SOL ST ELEC, 44(8), 2000, pp. 1367-1372
Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect
Authors: Niu, GF Cressler, JD Mathew, SJ Subbanna, S
Citation: Gf. Niu et al., Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect, SOL ST ELEC, 44(8), 2000, pp. 1507-1509
A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs
Authors: Niu, GF Mathew, SJ Cressler, JD Subbanna, S
Citation: Gf. Niu et al., A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1187-1189
The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes
Authors: Shivaram, R Niu, GF Cressler, JD Croke, ET
Citation: R. Shivaram et al., The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes, SOL ST ELEC, 44(3), 2000, pp. 559-563
A comparison of npn and pnp profile design tradeoffs for complementary SiGeHBT Technology
Authors: Zhang, G Cressler, JD Niu, GF Pinto, A
Citation: G. Zhang et al., A comparison of npn and pnp profile design tradeoffs for complementary SiGeHBT Technology, SOL ST ELEC, 44(11), 2000, pp. 1949-1954
The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGeHBT BiCMOS technology
Authors: Cressler, JD Hamilton, MC Mullinax, GS Li, Y Niu, GF Marshall, CJ Marshall, PW Kim, HS Palmer, MJ Joseph, AJ Freeman, G
Citation: Jd. Cressler et al., The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGeHBT BiCMOS technology, IEEE NUCL S, 47(6), 2000, pp. 2515-2520
A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies
Authors: Zhang, SM Niu, GF Cressler, JD Mathew, SJ Gogineni, U Clark, SD Zampardi, P Pierson, RL
Citation: Sm. Zhang et al., A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies, IEEE NUCL S, 47(6), 2000, pp. 2521-2527
Simulation of SEE-induced charge collection in UHV/CVD SiGeHBTs
Authors: Niu, GF Cressler, JD Shoga, M Jobe, K Chu, P Harame, DL
Citation: Gf. Niu et al., Simulation of SEE-induced charge collection in UHV/CVD SiGeHBTs, IEEE NUCL S, 47(6), 2000, pp. 2682-2689
Hot electron and hot hole degradation of UHV/CVD SiGeHBT's
Authors: Gogineni, U Cressler, JD Niu, G Harame, DL
Citation: U. Gogineni et al., Hot electron and hot hole degradation of UHV/CVD SiGeHBT's, IEEE DEVICE, 47(7), 2000, pp. 1440-1448
A channel resistance derivative method for effective channel length extraction in LDD MOSFET's
Authors: Niu, GF Cressler, JD Mathew, SJ Subbanna, S
Citation: Gf. Niu et al., A channel resistance derivative method for effective channel length extraction in LDD MOSFET's, IEEE DEVICE, 47(3), 2000, pp. 648-650
The influence of Ge grading on the bias and temperature characteristics ofSiGeHBT's for precision analog circuits
Authors: Salmon, SL Cressler, JD Jaeger, RC Harame, DL
Citation: Sl. Salmon et al., The influence of Ge grading on the bias and temperature characteristics ofSiGeHBT's for precision analog circuits, IEEE DEVICE, 47(2), 2000, pp. 292-298
Noise modeling and SiGe profile design tradeoffs for RF applications
Authors: Niu, GF Zhang, SM Cressler, JD Joseph, AJ Fairbanks, JS Larson, LE Webster, CS Ansley, WE Harame, DL
Citation: Gf. Niu et al., Noise modeling and SiGe profile design tradeoffs for RF applications, IEEE DEVICE, 47(11), 2000, pp. 2037-2044
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
Authors: Mathew, SJ Niu, GF Dubbelday, WB Cressler, JD Ott, JA Chu, JO Mooney, PM Kavanagh, KL Meyerson, BS Lagnado, I
Citation: Sj. Mathew et al., Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire, IEEE ELEC D, 20(4), 1999, pp. 173-175
Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI)
Authors: Niu, GF Cressler, JD Mathew, SJ Ahlgren, DC
Citation: Gf. Niu et al., Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI), IEEE ELEC D, 20(10), 1999, pp. 520-522
The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's
Authors: Niu, G Cressler, JD
Citation: G. Niu et Jd. Cressler, The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's, SOL ST ELEC, 43(12), 1999, pp. 2225-2230
Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors
Authors: Banerjee, G Niu, G Cressler, JD Clark, SD Palmer, MJ Ahlgren, DC
Citation: G. Banerjee et al., Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors, IEEE NUCL S, 46(6), 1999, pp. 1620-1626
The effects of proton irradiation on the RF performance of SiGeHBTs
Authors: Zhang, SM Niu, GF Cressler, JD Clark, SD Ahlgren, DC
Citation: Sm. Zhang et al., The effects of proton irradiation on the RF performance of SiGeHBTs, IEEE NUCL S, 46(6), 1999, pp. 1716-1721
Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 mu m SiGeBiCMOS technology
Authors: Niu, G Mathew, SJ Banerjee, G Cressler, JD Clark, SD Palmer, MJ Subbanna, S
Citation: G. Niu et al., Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 mu m SiGeBiCMOS technology, IEEE NUCL S, 46(6), 1999, pp. 1841-1847
Radiation-induced back-channel leakage in SiGeCMOS on silicon-on-sapphire (SOS) technology
Authors: Mathew, SJ Niu, G Clark, SD Cressler, JD Palmer, MJ Dubbelday, WB
Citation: Sj. Mathew et al., Radiation-induced back-channel leakage in SiGeCMOS on silicon-on-sapphire (SOS) technology, IEEE NUCL S, 46(6), 1999, pp. 1848-1853
Risultati: 1-25 | 26-33