Authors:
CASTINEIRA JLP
LEITE JR
SCOLFARO LMR
ENDERLEIN R
ALVES JLA
ALVES HWL
Citation: Jlp. Castineira et al., FIRST PRINCIPLES STUDIES OF POINT-DEFECTS AND IMPURITIES IN CUBIC BORON-NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 53-57
Authors:
PUSEP YA
SILVA MTO
GALZERANI JC
DASILVA SW
SCOLFARO LMR
ENDERLEIN R
QUIVY AA
LIMA AP
LEITE JR
Citation: Ya. Pusep et al., FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES, Superlattices and microstructures, 23(5), 1998, pp. 1033-1035
Authors:
LEVINE A
DASILVA ECF
SCOLFARO LMR
BELIAEV D
QUIVY AA
ENDERLEIN R
LEITE JR
Citation: A. Levine et al., SPATIALLY DIRECT RECOMBINATIONS OBSERVED IN MULTIPLE DELTA-DOPED GAAS-LAYERS, Superlattices and microstructures, 23(2), 1998, pp. 301-306
Authors:
ENDERLEIN R
SIPAHI GM
SCOLFARO LMR
LEITE JR
Citation: R. Enderlein et al., PARAMETERS OF THE KANE MODEL FROM EFFECTIVE MASSES - AMBIGUITIES AND INSTABILITIES, Physica status solidi. b, Basic research, 206(2), 1998, pp. 623-633
Authors:
RODRIGUES SCP
ROSA AL
SCOLFARO LMR
BELIAEV D
LEITE JR
ENDERLEIN R
ALVES JLA
Citation: Scp. Rodrigues et al., MINIBAND STRUCTURES AND EFFECTIVE MASSES OF N-TYPE DELTA-DOPING SUPERLATTICES IN GAN, Semiconductor science and technology, 13(9), 1998, pp. 981-988
Authors:
SIPAHI GM
ENDERLEIN R
SCOLFARO LMR
LEITE JR
DASILVA ECF
LEVINE A
Citation: Gm. Sipahi et al., THEORY OF LUMINESCENCE SPECTRA FROM S-DOPING STRUCTURES - APPLICATIONTO GAAS, Physical review. B, Condensed matter, 57(15), 1998, pp. 9168-9178
Authors:
SOLER MAG
DEPEYROT J
MORAIS PC
SOARES JANT
SCOLFARO LMR
DASILVA ECF
ENDERLEIN R
WEIMANN G
TRANKLE G
Citation: Mag. Soler et al., PHOTOREFLECTANCE MEASUREMENTS IN GAAS ALGAAS ASYMMETRIC QUANTUM-WELLS/, Superlattices and microstructures, 21(4), 1997, pp. 581-585
Authors:
BELOGOROKHOV AI
ENDERLEIN R
TABATA A
LEITE JR
KARAVANSKII VA
BELOGOROKHOVA LI
Citation: Ai. Belogorokhov et al., ENHANCED PHOTOLUMINESCENCE FROM POROUS SILICON FORMED BY NONSTANDARD PREPARATION, Physical review. B, Condensed matter, 56(16), 1997, pp. 10276-10282
Citation: R. Enderlein, PHOTOREFLECTANCE STUDIES OF (AL, GA)AS GAAS HETEROSTRUCTURES AND DEVICES/, Physica status solidi. b, Basic research, 194(1), 1996, pp. 257-277
Authors:
PUSEP YA
SILVA MTO
GALZERANI JC
DASILVA SW
SCOLFARO LMR
ENDERLEIN R
QUIVY AA
LIMA AP
LEITE JR
Citation: Ya. Pusep et al., RAMAN-STUDY OF FANO-LIKE ELECTRON-PHONON COUPLING IN DELTA-DOPING GAAS SUPERLATTICES, Physical review. B, Condensed matter, 54(19), 1996, pp. 13927-13931
Authors:
SIPAHI GM
ENDERLEIN R
SCOLFARO LMR
LEITE JR
Citation: Gm. Sipahi et al., BAND-STRUCTURE OF HOLES IN P-TYPE DELTA-DOPING QUANTUM-WELLS AND SUPERLATTICES, Physical review. B, Condensed matter, 53(15), 1996, pp. 9930-9942
Authors:
TELES LK
SCOLFARO LMR
ENDERLEIN R
LEITE JR
JOSIEK A
SCHIKORA D
LISCHKA K
Citation: Lk. Teles et al., STRUCTURAL-PROPERTIES OF CUBIC GAN EPITAXIAL LAYERS GROWN ON BETA-SIC, Journal of applied physics, 80(11), 1996, pp. 6322-6328
Authors:
TABATA A
ENDERLEIN R
LEITE JR
DASILVA SW
GALZERANI JC
SCHIKORA D
KLOIDT M
LISCHKA K
Citation: A. Tabata et al., COMPARATIVE RAMAN STUDIES OF CUBIC AND HEXAGONAL GAN EPITAXIAL LAYERS, Journal of applied physics, 79(8), 1996, pp. 4137-4140
Authors:
LEITE JR
RODRIGUES SCP
SCOLFARO LMR
ENDERLEIN R
BELIAEV D
QUIVY AA
Citation: Jr. Leite et al., ELECTRICAL-CONDUCTIVITY OF DELTA-DOPING SUPERLATTICES PARALLEL TO THEGROWTH DIRECTION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 250-255
Authors:
ENDERLEIN R
SIPAHI GM
SCOLFARO LMR
LEITE JR
DIAZ IFL
Citation: R. Enderlein et al., COMPARATIVE-STUDIES OF PHOTOLUMINESCENCE FROM N-DELTA-DOPING AND P-DELTA-DOPING WELLS IN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 396-400
Authors:
TABATA A
CESCHIN AM
QUIVY AA
LEVINE A
LEITE JR
ENDERLEIN R
OLIVEIRA JBB
LAURETO E
GONCALVES JL
Citation: A. Tabata et al., INVESTIGATION OF THE PHOTOLUMINESCENCE LINEWIDTH BROADENING IN SYMMETRICAL AND ASYMMETRIC INGAAS GAAS N-TYPE DELTA-DOPED QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 401-405
Authors:
ENDERLEIN R
BELIAEV D
SOARES JANT
SCOLFARO LMR
LEITE JR
Citation: R. Enderlein et al., METHOD FOR CALCULATING PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SEMICONDUCTOR HETEROSTRUCTURES, Physical review. B, Condensed matter, 52(4), 1995, pp. 2814-2822
Authors:
CESCHIN AM
QUIVY AA
SOARES JANT
ENDERLEIN R
TABATA A
SCOLFARO LMR
DASILVA ECF
LEITE JR
OLIVEIRA JBB
MENESES EA
Citation: Am. Ceschin et al., PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDIES ON DELTA-DOPED IN0.15GA0.85AS GAAS QUANTUM-WELLS/, Superlattices and microstructures, 15(3), 1994, pp. 333-337
Authors:
BELIAEV D
ENDERLEIN R
SOARES JANT
SCOLFARO LMR
CESCHIN AM
QUIVY AA
LEITE JR
Citation: D. Beliaev et al., PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA FROM SPATIALLY INHOMOGENEOUS HETEROSTRUCTURES CALCULATED BY MEANS OF A NEW METHOD, Superlattices and microstructures, 15(3), 1994, pp. 339-343