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Authors: GOLZ A GHERSIN T JOACHIMS HZ WESTERMAN ST GILBERT LM NETZER A
Citation: A. Golz et al., PROPHYLACTIC TREATMENT AFTER VENTILATION TUBE INSERTION - COMPARISON OF VARIOUS METHODS, Otolaryngology and head and neck surgery, 119(1), 1998, pp. 117-120

Authors: LUCOVSKY G NIIMI H GOLZ A KURZ H
Citation: G. Lucovsky et al., DIFFERENCES BETWEEN SILICON OXYCARBIDE REGIONS AT SIC-SIO2 PREPARED BY PLASMA-ASSISTED OXIDATION AND THERMAL OXIDATIONS, Applied surface science, 123, 1998, pp. 435-439

Authors: GOLZ A ANGELYEGER B PARUSH S
Citation: A. Golz et al., EVALUATION OF BALANCE DISTURBANCES IN CHILDREN WITH MIDDLE-EAR EFFUSION, International journal of pediatric otorhinolaryngology, 43(1), 1998, pp. 21-26

Authors: GAITINI L FRADIS M VAIDA S COLLINS G CROITORU M SOMRI M BOROCHOVITZ Z GOLZ A
Citation: L. Gaitini et al., FAILURE TO CONTROL THE AIRWAY IN A PATIENT WITH HUNTERS-SYNDROME, Journal of Laryngology and Otology, 112(4), 1998, pp. 380-382

Authors: CATALFUMO FJ GOLZ A WESTERMAN ST GILBERT LM JOACHIMS HZ GOLDENBERG D
Citation: Fj. Catalfumo et al., THE EPIGLOTTIS AND OBSTRUCTIVE SLEEP-APNEA SYNDROME, Journal of Laryngology and Otology, 112(10), 1998, pp. 940-943

Authors: GOLZ A LUCOVSKY G KOH K WOLFE D NIIMI H KURZ H
Citation: A. Golz et al., PLASMA-ASSISTED FORMATION OF LOW DEFECT DENSITY SIC-SIO2 INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1097-1104

Authors: MEYER C LUPKE G VONKAMIENSKI ES GOLZ A KURZ H
Citation: C. Meyer et al., NONLINEAR-OPTICAL MAPPING OF 3C-INCLUSIONS IN 6H-SIC-EPILAYERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1374-1377

Authors: GOLZ A GROSS S JANSSEN R VONKAMIENSKI ES KURZ H
Citation: A. Golz et al., FABRICATION OF HIGH-QUALITY OXIDES ON SIC BY REMOTE PECVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1420-1423

Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD AND HIGH-TEMPERATURE STRESS OF N-SIC MOS CAPACITORS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1489-1493

Authors: VONKAMIENSKI EGS LEONHARD C SCHARNHOLZ S GOLZ A KURZ H
Citation: Egs. Vonkamienski et al., PASSIVATION OF INTERFACE TRAPS IN MOS-DEVICES ON N-TYPE AND P-TYPE 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1497-1499

Authors: VONKAMIENSKI EGS LEONHARD C PORTHEINE F GOLZ A KURZ H
Citation: Egs. Vonkamienski et al., LONG-TERM STABILITY OF GATE-OXIDES ON N-TYPE AND P-TYPE SILICON-CARBIDE STUDIED BY CHARGE INJECTION TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 263-266

Authors: GOLZ A GROSS S JANSSEN R VONKAMIENSKI ES KURZ H
Citation: A. Golz et al., ELECTRICAL-PROPERTIES OF OXIDES ON SILICON-CARBIDE GROWN BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION ANNEALED IN DIFFERENT GAS AMBIENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 363-365

Authors: GOLZ A BENARIE Y FRADIS M
Citation: A. Golz et al., PLEOMORPHIC NASOSEPTAL ADENOMA, Journal of otolaryngology, 26(6), 1997, pp. 399-401

Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 12(5), 1997, pp. 525-528

Authors: GOLZ A FRADIS M NETZER A JOACHIMS HZ WESTERMAN ST GILBERT LM
Citation: A. Golz et al., EXTRACTION OF A LARGE TRACHEAL FOREIGN-BODY THROUGH A TRACHEOTOMY, American journal of otolaryngology, 18(5), 1997, pp. 335-337

Authors: GOLZ A LUCOVSKY G KOH K WOLFE D NIIMI H KURZ H
Citation: A. Golz et al., PLASMA-ASSISTED FORMATION OF LOW DEFECT DENSITY SILICON-CARBIDE SILICON DIOXIDE, SIC-SIO2, INTERFACES, Microelectronic engineering, 36(1-4), 1997, pp. 73-76

Authors: GOLZ A SCHARNHOLZ S KURZ H
Citation: A. Golz et al., THE ROLE OF OXYGEN AND NITROGEN AT THE SIO2 SIC INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 187-190

Authors: GOLDENBERG D GOLZ A JOACHIMS HZ
Citation: D. Goldenberg et al., RETROPHARYNGEAL ABSCESS - A CLINICAL REVIEW, Journal of Laryngology and Otology, 111(6), 1997, pp. 546-550

Authors: GOLDENBERG D GOLZ A FLAXGOLDENBERG R JOACHIMS HZ
Citation: D. Goldenberg et al., SEVERE LARYNGEAL INJURY CAUSED BY BLUNT TRAUMA TO THE NECK - A CASE-REPORT, Journal of Laryngology and Otology, 111(12), 1997, pp. 1174-1176

Authors: BANO E OUISSE T SCHARNHOLZ SP GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS, Electronics Letters, 33(3), 1997, pp. 243-245

Authors: MEYER C LUPKE G LU ZG GOLZ A KURZ H LUCOVSKY G
Citation: C. Meyer et al., NONLINEAR-OPTICAL SPECTROSCOPY OF SI-HETEROSTRUCTURE INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3107-3112

Authors: VONKAMIENSKI EGS PORTHEINE F STEIN J GOLZ A KURZ H
Citation: Egs. Vonkamienski et al., CHARGE TRAPPING IN DRY AND WET OXIDES ON N-TYPE 6H-SIC STUDIED BY FOWLER-NORDHEIM CHARGE INJECTION, Journal of applied physics, 79(5), 1996, pp. 2529-2534

Authors: MEYER C LUPKE G VONKAMIENSKI ES GOLZ A KURZ H
Citation: C. Meyer et al., NONLINEAR-OPTICAL MAPPING OF SILICON-CARBIDE POLYTYPES IN GH-SIC EPILAYERS, Applied physics letters, 69(15), 1996, pp. 2243-2245

Authors: VONKAMIENSKI ES GOLZ A KURZ H
Citation: Es. Vonkamienski et al., EFFECTS OF AR AND H-2 ANNEALING ON THE ELECTRICAL-PROPERTIES OF OXIDES ON 6H SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 131-133

Authors: VONKAMIENSKI ES GOLZ A STEIN J KURZ H
Citation: Es. Vonkamienski et al., CHARACTERIZATION OF ANNEALED OXIDES ON N-TYPE 6H-SIC BY HIGH-FREQUENCY AND LOW-FREQUENCY CV-MEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 201-204
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