Authors:
GOLZ A
GHERSIN T
JOACHIMS HZ
WESTERMAN ST
GILBERT LM
NETZER A
Citation: A. Golz et al., PROPHYLACTIC TREATMENT AFTER VENTILATION TUBE INSERTION - COMPARISON OF VARIOUS METHODS, Otolaryngology and head and neck surgery, 119(1), 1998, pp. 117-120
Citation: G. Lucovsky et al., DIFFERENCES BETWEEN SILICON OXYCARBIDE REGIONS AT SIC-SIO2 PREPARED BY PLASMA-ASSISTED OXIDATION AND THERMAL OXIDATIONS, Applied surface science, 123, 1998, pp. 435-439
Citation: A. Golz et al., EVALUATION OF BALANCE DISTURBANCES IN CHILDREN WITH MIDDLE-EAR EFFUSION, International journal of pediatric otorhinolaryngology, 43(1), 1998, pp. 21-26
Authors:
GAITINI L
FRADIS M
VAIDA S
COLLINS G
CROITORU M
SOMRI M
BOROCHOVITZ Z
GOLZ A
Citation: L. Gaitini et al., FAILURE TO CONTROL THE AIRWAY IN A PATIENT WITH HUNTERS-SYNDROME, Journal of Laryngology and Otology, 112(4), 1998, pp. 380-382
Authors:
GOLZ A
LUCOVSKY G
KOH K
WOLFE D
NIIMI H
KURZ H
Citation: A. Golz et al., PLASMA-ASSISTED FORMATION OF LOW DEFECT DENSITY SIC-SIO2 INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1097-1104
Authors:
VONKAMIENSKI EGS
LEONHARD C
SCHARNHOLZ S
GOLZ A
KURZ H
Citation: Egs. Vonkamienski et al., PASSIVATION OF INTERFACE TRAPS IN MOS-DEVICES ON N-TYPE AND P-TYPE 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1497-1499
Authors:
VONKAMIENSKI EGS
LEONHARD C
PORTHEINE F
GOLZ A
KURZ H
Citation: Egs. Vonkamienski et al., LONG-TERM STABILITY OF GATE-OXIDES ON N-TYPE AND P-TYPE SILICON-CARBIDE STUDIED BY CHARGE INJECTION TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 263-266
Authors:
GOLZ A
GROSS S
JANSSEN R
VONKAMIENSKI ES
KURZ H
Citation: A. Golz et al., ELECTRICAL-PROPERTIES OF OXIDES ON SILICON-CARBIDE GROWN BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION ANNEALED IN DIFFERENT GAS AMBIENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 363-365
Authors:
BANO E
OUISSE T
LEONHARD C
GOLZ A
VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 12(5), 1997, pp. 525-528
Authors:
GOLZ A
FRADIS M
NETZER A
JOACHIMS HZ
WESTERMAN ST
GILBERT LM
Citation: A. Golz et al., EXTRACTION OF A LARGE TRACHEAL FOREIGN-BODY THROUGH A TRACHEOTOMY, American journal of otolaryngology, 18(5), 1997, pp. 335-337
Authors:
GOLZ A
LUCOVSKY G
KOH K
WOLFE D
NIIMI H
KURZ H
Citation: A. Golz et al., PLASMA-ASSISTED FORMATION OF LOW DEFECT DENSITY SILICON-CARBIDE SILICON DIOXIDE, SIC-SIO2, INTERFACES, Microelectronic engineering, 36(1-4), 1997, pp. 73-76
Authors:
GOLDENBERG D
GOLZ A
FLAXGOLDENBERG R
JOACHIMS HZ
Citation: D. Goldenberg et al., SEVERE LARYNGEAL INJURY CAUSED BY BLUNT TRAUMA TO THE NECK - A CASE-REPORT, Journal of Laryngology and Otology, 111(12), 1997, pp. 1174-1176
Authors:
MEYER C
LUPKE G
LU ZG
GOLZ A
KURZ H
LUCOVSKY G
Citation: C. Meyer et al., NONLINEAR-OPTICAL SPECTROSCOPY OF SI-HETEROSTRUCTURE INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3107-3112
Authors:
VONKAMIENSKI EGS
PORTHEINE F
STEIN J
GOLZ A
KURZ H
Citation: Egs. Vonkamienski et al., CHARGE TRAPPING IN DRY AND WET OXIDES ON N-TYPE 6H-SIC STUDIED BY FOWLER-NORDHEIM CHARGE INJECTION, Journal of applied physics, 79(5), 1996, pp. 2529-2534
Authors:
MEYER C
LUPKE G
VONKAMIENSKI ES
GOLZ A
KURZ H
Citation: C. Meyer et al., NONLINEAR-OPTICAL MAPPING OF SILICON-CARBIDE POLYTYPES IN GH-SIC EPILAYERS, Applied physics letters, 69(15), 1996, pp. 2243-2245
Citation: Es. Vonkamienski et al., EFFECTS OF AR AND H-2 ANNEALING ON THE ELECTRICAL-PROPERTIES OF OXIDES ON 6H SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 131-133
Citation: Es. Vonkamienski et al., CHARACTERIZATION OF ANNEALED OXIDES ON N-TYPE 6H-SIC BY HIGH-FREQUENCY AND LOW-FREQUENCY CV-MEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 201-204