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Results: 1-25/90
Authors:
YAKIMOVA R
SYVAJARVI M
LOCKOWANDT C
LINNARSSON MK
RADAMSON HH
JANZEN E
Citation: R. Yakimova et al., SILICON-CARBIDE GROWN BY LIQUID-PHASE EPITAXY IN MICROGRAVITY, Journal of materials research, 13(7), 1998, pp. 1812-1815
Authors:
YAKIMOVA R
HEMMINGSSON C
MACMILLAN MF
YAKIMOV T
JANZEN E
Citation: R. Yakimova et al., BARRIER HEIGHT DETERMINATION FOR N-TYPE 4H-SIC SCHOTTKY CONTACTS MADEUSING VARIOUS METALS, Journal of electronic materials, 27(7), 1998, pp. 871-875
Authors:
MACMILLAN MF
HENRY A
JANZEN E
Citation: Mf. Macmillan et al., THICKNESS DETERMINATION OF LOW DOPED SIC EPI-FILMS ON HIGHLY DOPED SIC SUBSTRATES, Journal of electronic materials, 27(4), 1998, pp. 300-303
Authors:
HEMMINGSSON CG
SON NT
ELLISON A
ZHANG J
JANZEN E
Citation: Cg. Hemmingsson et al., NEGATIVE-U CENTERS IN 4H SILICON-CARBIDE, Physical review. B, Condensed matter, 58(16), 1998, pp. 10119-10122
Authors:
MARTINEZ MF
KASTELIC JP
ADAMS GP
JANZEN E
OLSON W
MAPLETOFT RJ
Citation: Mf. Martinez et al., ALTERNATIVE METHODS OF SYNCHRONIZING ESTRUS AND OVULATION FOR FIXED-TIME INSEMINATION IN CATTLE, Theriogenology, 49(1), 1998, pp. 350-350
Authors:
TUOMINEN M
YAKIMOVA R
KAKANAKOVAGEORGIEVA A
MACMILLAN MF
SYVAJARVI M
JANZEN E
Citation: M. Tuominen et al., INVESTIGATION OF DOMAIN EVOLUTION IN SUBLIMATION EPITAXY OF SIC, Journal of crystal growth, 193(1-2), 1998, pp. 101-108
Authors:
HALLIN C
IVANOV IG
EGILSSON T
HENRY A
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE MATERIAL QUALITY OF CVD-GROWN SIC USING DIFFERENT CARBON PRECURSORS, Journal of crystal growth, 183(1-2), 1998, pp. 163-174
Authors:
HEMMINGSSON C
SON NT
KORDINA O
JANZEN E
LINDSTROM JL
Citation: C. Hemmingsson et al., CAPTURE CROSS-SECTIONS OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN 6H-SIC, Journal of applied physics, 84(2), 1998, pp. 704-708
Authors:
WAHAB Q
KIMOTO T
ELLISON A
HALLIN C
TUOMINEN M
YAKIMOVA R
HENRY A
BERGMAN JP
JANZEN E
Citation: Q. Wahab et al., A 3 KV SCHOTTKY-BARRIER DIODE IN 4H-SIC, Applied physics letters, 72(4), 1998, pp. 445-447
Authors:
SYVAJARVI M
YAKIMOVA R
JANZEN E
Citation: M. Syvajarvi et al., GROWTH OF SIC FROM THE LIQUID-PHASE - WETTING AND DISSOLUTION OF SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1266-1268
Authors:
TUOMINEN M
YAKIMOVA R
PRIEUR E
ELLISON A
TUOMI T
VEHANEN A
JANZEN E
Citation: M. Tuominen et al., GROWTH-RELATED STRUCTURAL DEFECTS IN SEEDED SUBLIMATION-GROWN SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1272-1275
Authors:
HENRY A
IVANOV IG
EGILSSON T
HALLIN C
ELLISON A
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., HIGH-QUALITY 4H-SIC GROWN ON VARIOUS SUBSTRATE ORIENTATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1289-1292
Authors:
HALLIN C
KONSTANTINOV AO
PECZ B
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE ORIGIN OF 3C POLYTYPE INCLUSIONS IN EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1297-1300
Authors:
ELLISON A
RADAMSON H
TUOMINEN M
MILITA S
HALLIN C
HENRY A
KORDINA O
TUOMI T
YAKIMOVA R
MADAR R
JANZEN E
Citation: A. Ellison et al., WAFER WARPAGE, CRYSTAL BENDING AND INTERFACE PROPERTIES OF 4H-SIC EPI-WAFERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1369-1373
Authors:
SON NT
SORMAN E
SINGH M
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
LINDSTROM JL
JANZEN E
Citation: Nt. Son et al., DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1378-1380
Authors:
SON NT
SORMAN E
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
JANZEN E
Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN 3C SIC EPITAXIAL LAYERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1381-1384
Authors:
YAKIMOVA R
HYLEN AL
TUOMINEN M
SYVAJARVI M
JANZEN E
Citation: R. Yakimova et al., PREFERENTIAL ETCHING OF SIC CRYSTALS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1456-1458
Authors:
ROTTNER KH
SCHONER A
SAVAGE SM
FRISCHHOLZ M
HALLIN C
KORDINA O
JANZEN E
Citation: Kh. Rottner et al., 2.5 KV ION-IMPLANTED P(+)N DIODES IN 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1485-1488
Authors:
JANZEN E
KORDINA O
Citation: E. Janzen et O. Kordina, SIC MATERIAL FOR HIGH-POWER APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 203-209
Authors:
YAKIMOVA R
YAKIMOV T
HITOVA L
JANZEN E
Citation: R. Yakimova et al., DEFECT MAPPING IN 4H-SIC WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 287-290
Authors:
SYVAJARVI M
YAKIMOVA R
IVANOV IG
JANZEN E
Citation: M. Syvajarvi et al., GROWTH OF 4H-SIC FROM LIQUID-PHASE, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 329-332
Authors:
HEMMINGSSON C
SON NT
KORDINA O
JANZEN E
LINDSTROM JL
SAVAGE S
NORDELL N
Citation: C. Hemmingsson et al., CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 336-339
Authors:
KAKANAKOVAGEORGIEVA A
PASKOVA T
YAKIMOVA R
HALLIN C
SYVAJARVI M
TRIFONOVA EP
SURTCHEV M
JANZEN E
Citation: A. Kakanakovageorgieva et al., STRUCTURAL-PROPERTIES OF 6H-SIC EPILAYERS GROWN BY 2 DIFFERENT TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 345-348
Authors:
TOBIAS P
BARANZAHI A
SPETZ AL
KORDINA O
JANZEN E
LUNDSTROM I
Citation: P. Tobias et al., FAST CHEMICAL SENSING WITH METAL-INSULATOR SILICON-CARBIDE STRUCTURES, IEEE electron device letters, 18(6), 1997, pp. 287-289
Authors:
KORDINA O
HALLIN C
HENRY A
BERGMAN JP
IVANOV I
ELLISON A
SON NT
JANZEN E
Citation: O. Kordina et al., GROWTH OF SIC BY HOT-WALL CVD AND HTCVD, Physica status solidi. b, Basic research, 202(1), 1997, pp. 321-334