AAAAAA
Results:
1-24
|
Results: 24
Authors:
Wilamowski, Z
Jantsch, W
Citation: Z. Wilamowski et W. Jantsch, Spin resonance properties of the two-dimensional electron gas, PHYSICA E, 10(1-3), 2001, pp. 17-21
Authors:
Kozanecki, A
Sealy, BJ
Homewood, K
Ledain, S
Jantsch, W
Kuritsyn, D
Citation: A. Kozanecki et al., Sensitization of the 1.54 mu m luminescence of Er3+ in SiO2 films by Yb and Si-nanocrystals, MAT SCI E B, 81(1-3), 2001, pp. 23-28
Authors:
Jantsch, W
Kocher, G
Palmetshofer, L
Przybylinska, H
Stepikhova, M
Preier, H
Citation: W. Jantsch et al., Optimisation of Er centers in Si for reverse biased light emitting diodes, MAT SCI E B, 81(1-3), 2001, pp. 86-90
Authors:
Przybylinska, H
Jantsch, W
Kozanecki, A
Citation: H. Przybylinska et al., Site selective excitation of Er-implanted GaN, MAT SCI E B, 81(1-3), 2001, pp. 147-149
Authors:
Kuritsyn, D
Glukchanyuk, V
Przybylinska, H
Kozanecki, A
Jantsch, W
Citation: D. Kuritsyn et al., Photoluminescence of Er3+ near 1.54 mu m in silicon-rich silicon oxide films, ACT PHY P A, 100(3), 2001, pp. 437-442
Authors:
Stepikhova, MV
Andreev, BA
Shmagin, VB
Krasil'nik, ZF
Kuznetsov, VP
Shengurov, VG
Svetlov, SP
Jantsch, W
Palmetshofer, L
Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method (vol 369, pg 320, 2000), THIN SOL FI, 381(1), 2001, pp. 164-169
Authors:
Wilamowski, Z
Sandersfeld, N
Jantsch, W
Tobben, D
Schaffler, F
Citation: Z. Wilamowski et al., Screening breakdown on the route toward the metal-insulator transition in modulation doped Si/SiGe quantum wells - art. no. 026401, PHYS REV L, 8702(2), 2001, pp. 6401-NIL_68
Authors:
Wilamowski, Z
Jantsch, W
Sandersfeld, N
Schaffler, F
Citation: Z. Wilamowski et al., Spin properties of the two-dimensional electron gas, PHYSICA B, 284, 2000, pp. 1926-1927
Authors:
Prechtl, G
Heiss, W
Mackowski, S
Bonanni, A
Karczewski, G
Sitter, H
Jantsch, W
Citation: G. Prechtl et al., Single antiferromagnetic MnTe (sub)monolayers in CdTe/CdMgTe quantum wells, SEMIC SCI T, 15(6), 2000, pp. 506-510
Authors:
Prechtl, G
Heiss, W
Bonanni, A
Jantsch, W
Mackowski, S
Janik, E
Karczewski, G
Citation: G. Prechtl et al., Zeeman mapping of probability densities in square quantum wells using magnetic probes, PHYS REV B, 61(23), 2000, pp. 15617-15620
Authors:
Sandersfeld, N
Jantsch, W
Wilamowski, Z
Schaffler, F
Citation: N. Sandersfeld et al., ESR investigations of modulation-doped Si/SiGe quantum wells, THIN SOL FI, 369(1-2), 2000, pp. 312-315
Authors:
Stepikhova, MV
Andreev, BA
Shmagin, VB
Krasil'nik, ZF
Kuznetsov, VP
Shengurov, VG
Svetlov, SP
Jantsch, W
Palmetshofer, L
Ellmer, H
Citation: Mv. Stepikhova et al., Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method, THIN SOL FI, 369(1-2), 2000, pp. 426-430
Authors:
Iller, A
Jantsch, W
Marks, J
Pastuszka, B
Diduszko, R
Sadowski, J
Citation: A. Iller et al., Infrared reflection in the Reststrahlen region of GaN MBE grown epitaxial layers on Si substrates, DIAM RELAT, 8(1), 1999, pp. 25-28
Authors:
Jantsch, W
Lanzerstorfer, S
Palmetshofer, L
Stepikhova, M
Kocher, G
Preier, H
Citation: W. Jantsch et al., On the generation of optically active Er centers in Si light emitting diodes, PHYSICA B, 274, 1999, pp. 330-333
Authors:
Jantsch, W
Wilamowski, Z
Sandersfeld, N
Schaffler, F
Citation: W. Jantsch et al., Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonance, PHYSICA B, 274, 1999, pp. 944-946
Authors:
Stepikhova, MV
Jantsch, W
Palmetshofer, L
von Bardeleben, J
Citation: Mv. Stepikhova et al., Er-related photoluminescence in porous silicon. Optically active erbium centers, IAN FIZ, 63(2), 1999, pp. 400-405
Authors:
Kozanecki, A
Jeynes, C
Barradas, NP
Sealy, BJ
Jantsch, W
Citation: A. Kozanecki et al., The influence of implantation and annealing conditions on optical activityof Er3+ ions in 6H SiC, NUCL INST B, 148(1-4), 1999, pp. 512-516
Authors:
Kozanecki, A
Przybylinska, H
Jantsch, W
Palmetshofer, L
Citation: A. Kozanecki et al., Room-temperature photoluminescence excitation spectroscopy of Er3+ ions inEr- and (Er plus Yb)-doped SiO2 films, APPL PHYS L, 75(14), 1999, pp. 2041-2043
Authors:
Stepikhova, M
Palmetshofer, L
Jantsch, W
von Bardeleben, HJ
Gaponenko, NV
Citation: M. Stepikhova et al., 1.5 mu m infrared photoluminescence phenomena in Er-doped porous silicon, APPL PHYS L, 74(4), 1999, pp. 537-539
Authors:
Jantsch, W
Wilamowski, Z
Sandersfeld, N
Schaffler, F
Citation: W. Jantsch et al., ESR investigations of modulation-doped Si/SiGe quantum wells, PHYS ST S-B, 210(2), 1998, pp. 643-648
Authors:
Skierbiszewski, C
Wilamowski, Z
Jantsch, W
Citation: C. Skierbiszewski et al., The universal behaviour of shallow-deep level instabilities in semiconductors, PHYS ST S-B, 210(2), 1998, pp. 765-769
Authors:
Jantsch, W
Lanzerstorfer, S
Palmetshofer, L
Stepikhova, M
Preier, H
Citation: W. Jantsch et al., Different Er centres in Si and their use for electroluminescent devices, J LUMINESC, 80(1-4), 1998, pp. 9-17
Authors:
Lanzerstorfer, S
Pedarnig, JD
Gunasekaran, RA
Bauerle, D
Jantsch, W
Citation: S. Lanzerstorfer et al., 1.54 mu m Emission of pulsed-laser deposited Er-doped films on Si, J LUMINESC, 80(1-4), 1998, pp. 353-356
Authors:
Gaponenko, NV
Mudryi, AV
Sergeev, OV
Stepikhova, M
Palmetshofer, L
Jantsch, W
Pivin, JC
Hamilton, B
Baran, AS
Rat'ko, AI
Citation: Nv. Gaponenko et al., On the origin of 1.5 mu m luminescence in porous silicon coated with sol-gel derived erbium-doped Fe2O3 films, J LUMINESC, 80(1-4), 1998, pp. 399-403
Risultati:
1-24
|