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Results: 26-50/51
Authors:
SARATHY J
MAYER RA
JUNG K
UNNIKRISHNAN S
KWONG DL
CAMPBELL JC
Citation: J. Sarathy et al., NORMAL-INCIDENCE GRATING COUPLERS IN GE-SI, Optics letters, 19(11), 1994, pp. 798-800
Authors:
SNNIKRISHNAN U
YOON GW
KWONG DL
Citation: U. Snnikrishnan et al., APPLICATIONS OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY TOULSI MATERIAL PROCESSING AND DEVICE FABRICATION, Thin solid films, 241(1-2), 1994, pp. 329-334
Authors:
KINOSHITA H
HUANG TH
KWONG DL
Citation: H. Kinoshita et al., MODELING OF SUPPRESSED DOPANT ACTIVATION IN BORON-IMPLANTED AND BF-IMPLANTED SILICON, Journal of applied physics, 75(12), 1994, pp. 8213-8215
Authors:
JOSHI AB
KWONG DL
Citation: Ab. Joshi et Dl. Kwong, HOT-CARRIER EFFECTS ON ANALOG PERFORMANCE OF N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1465-1467
Authors:
JOSHI AB
KWONG DL
Citation: Ab. Joshi et Dl. Kwong, EFFECTS OF AC HOT-CARRIER STRESS ON N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 671-674
Authors:
YOON GW
JOSHI AB
KWONG DL
MATHEWS VK
THAKUR RPS
FAZAN PC
Citation: Gw. Yoon et al., EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 347-351
Authors:
HUANG TH
KINOSHITA H
KWONG DL
Citation: Th. Huang et al., INFLUENCE OF FLUORINE PREAMORPHIZATION ON THE DIFFUSION AND ACTIVATION OF LOW-ENERGY IMPLANTED BORON DURING RAPID THERMAL ANNEALING, Applied physics letters, 65(14), 1994, pp. 1829-1831
Authors:
BHAT M
KAMATH A
KWONG DL
SUN YM
WHITE JM
Citation: M. Bhat et al., AUGER-ELECTRON SPECTROSCOPY STUDY OF THE INTERACTION OF NO2 WITH SI(100), Applied physics letters, 65(10), 1994, pp. 1314-1316
Authors:
BHAT M
AHN J
KWONG DL
ARENDT M
WHITE JM
Citation: M. Bhat et al., COMPARISON OF THE CHEMICAL-STRUCTURE AND COMPOSITION BETWEEN N2O OXIDES AND REOXIDIZED NH3-NITRIDED OXIDES, Applied physics letters, 64(9), 1994, pp. 1168-1170
Authors:
BHAT M
YOON GW
KIM J
KWONG DL
ARENDT M
WHITE JM
Citation: M. Bhat et al., EFFECTS OF NH3 NITRIDATION ON OXIDES GROWN IN PURE N2O AMBIENT, Applied physics letters, 64(16), 1994, pp. 2116-2118
Authors:
YAN J
SHIH S
JUNG KH
KWONG DL
KOVAR M
WHITE JM
GNADE BE
MAGEL L
Citation: J. Yan et al., STUDY OF THERMAL-OXIDATION AND NITROGEN ANNEALING OF LUMINESCENT POROUS SILICON, Applied physics letters, 64(11), 1994, pp. 1374-1376
Authors:
LO GQ
KWONG DL
FAZAN PC
MATHEWS VK
SANDLER N
Citation: Gq. Lo et al., HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON, IEEE electron device letters, 14(5), 1993, pp. 216-218
Authors:
YOON GW
JOSHI AB
KIM J
KWONG DL
Citation: Gw. Yoon et al., HIGH-FIELD-INDUCED LEAKAGE IN ULTRATHIN N2O OXIDES, IEEE electron device letters, 14(5), 1993, pp. 231-233
Authors:
KIM J
JOSHI AB
YOON GW
KWONG DL
Citation: J. Kim et al., EFFECTS OF RESIDUAL SURFACE NITROGEN ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF REGROWN OXIDES, IEEE electron device letters, 14(5), 1993, pp. 265-267
Authors:
JOSHI AB
AHN J
KWONG DL
Citation: Ab. Joshi et al., OXYNITRIDE GATE DIELECTRICS FOR P(-POLYSILICON GATE MOS DEVICES()), IEEE electron device letters, 14(12), 1993, pp. 560-562
Authors:
JOSHI AB
KWONG DL
Citation: Ab. Joshi et Dl. Kwong, RELIABILITY ISSUES IN SUBMICRON MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, Microelectronics and reliability, 33(11-12), 1993, pp. 1845-1866
Authors:
JOSHI AB
YOON GW
KIM JH
LO GQ
KWONG DL
Citation: Ab. Joshi et al., HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1437-1445
Authors:
LO GQ
JOSHI AB
KWONG DL
Citation: Gq. Lo et al., RADIATION HARDNESS OF MOSFETS WITH N2O-NITRIDED GATE OXIDES, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1565-1567
Authors:
ITOH S
LO GQ
KWONG DL
MATHEWS VK
FAZAN PC
Citation: S. Itoh et al., FORMATION OF HIGH-QUALITY OXIDE NITRIDE STACKED LAYERS ON RUGGED POLYSILICON ELECTRODES BY RAPID THERMAL-OXIDATION, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1176-1178
Authors:
LO GQ
KWONG DL
LEE S
Citation: Gq. Lo et al., DEGRADATION OF METAL-OXIDE SEMICONDUCTOR CHARACTERISTICS DUE TO BOROPHOSPHOSILICATE-GLASS REFLOW IN O2-CONTAINING AMBIENT, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 1032-1035
Authors:
KIM J
JOSHI AB
LO GQ
KWONG DL
LEE S
Citation: J. Kim et al., ELECTRICAL-PROPERTIES OF SI-IMPLANTED GATE OXIDES, Electronics Letters, 29(1), 1993, pp. 34-35
Authors:
JUNG KH
SHIH S
KWONG DL
Citation: Kh. Jung et al., DEVELOPMENTS IN LUMINESCENT POROUS SI, Journal of the Electrochemical Society, 140(10), 1993, pp. 3046-3064
Authors:
SHIH S
JUNG KH
YAN J
KWONG DL
KOVAR M
WHITE JM
GEORGE T
KIM S
Citation: S. Shih et al., PHOTOINDUCED LUMINESCENCE ENHANCEMENT FROM ANODICALLY OXIDIZED POROUSSI, Applied physics letters, 63(24), 1993, pp. 3306-3308
Authors:
SHIH S
JUNG KH
KWONG DL
KOVAR M
WHITE JM
Citation: S. Shih et al., PHOTOLUMINESCENCE STUDY OF ANODIZED POROUS SI AFTER HF VAPOR-PHASE ETCHING, Applied physics letters, 62(16), 1993, pp. 1904-1906
Authors:
LO GQ
KWONG DL
MATHEWS VK
FAZAN PC
DITALI A
Citation: Gq. Lo et al., DYNAMIC-STRESS-INDUCED DIELECTRIC-BREAKDOWN IN ULTRATHIN NITRIDE OXIDE STACKED FILMS DEPOSITED ON RUGGED POLYSILICON, IEEE electron device letters, 13(4), 1992, pp. 183-185