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Results: 1-25 | 26-27
Results: 1-25/27
Transient response in a dc-dc converter employing load-current feedforwardcontrol
Authors: Kanemaru, S Nabeshima, T Nakano, T
Citation: S. Kanemaru et al., Transient response in a dc-dc converter employing load-current feedforwardcontrol, ELEC C JP 1, 84(8), 2001, pp. 14-22
Charging damage of silicon-on-insulator (SOI) wafer determined by scanningMaxwell-stress microscopy
Authors: Matsukawa, T Fujii, H Nagao, M Kanemaru, S
Citation: T. Matsukawa et al., Charging damage of silicon-on-insulator (SOI) wafer determined by scanningMaxwell-stress microscopy, JPN J A P 1, 40(4B), 2001, pp. 2907-2910
Electron motion three-dimensional confinement for microelectronic vacuum gauges with field emitters
Authors: Nicolaescu, D Kanemaru, S Filip, V Itoh, J
Citation: D. Nicolaescu et al., Electron motion three-dimensional confinement for microelectronic vacuum gauges with field emitters, JPN J A P 1, 40(4A), 2001, pp. 2165-2172
Emission-uniformity improvement and work-function reduction of Si emitter tips by ethylene gas exposure
Authors: Matsukawa, T Kanemaru, S Nagao, M Yokoyama, H Itoh, J
Citation: T. Matsukawa et al., Emission-uniformity improvement and work-function reduction of Si emitter tips by ethylene gas exposure, J VAC SCI B, 19(5), 2001, pp. 1911-1914
Damageless vacuum sealing of Si field emitters with CHF3 plasma treatment
Authors: Nagao, M Matsukawa, T Kanemaru, S Itoh, J Tanabe, H
Citation: M. Nagao et al., Damageless vacuum sealing of Si field emitters with CHF3 plasma treatment, J VAC SCI B, 19(3), 2001, pp. 920-924
Fabrication of a vacuum-sealed magnetic sensor with a Si field emitter tip
Authors: Uemura, K Kanemaru, S Itoh, J
Citation: K. Uemura et al., Fabrication of a vacuum-sealed magnetic sensor with a Si field emitter tip, J MICROM M, 11(1), 2001, pp. 81-83
Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy
Authors: Fujii, H Matsukawa, T Kanemaru, S Yokoyama, H Itoh, J
Citation: H. Fujii et al., Characterization of electrical conduction in silicon nanowire by scanning Maxwell-stress microscopy, APPL PHYS L, 78(17), 2001, pp. 2560-2562
CNF3 plasma treatment of Si field emitter arrays for no damage vacuum packaging
Authors: Nagao, M Tanabe, H Matsukawa, T Kanemaru, S Itoh, J
Citation: M. Nagao et al., CNF3 plasma treatment of Si field emitter arrays for no damage vacuum packaging, JPN J A P 2, 39(7B), 2000, pp. L755-L756
Individual tip evaluation in Si field emitter arrays by electrostatic lensprojector
Authors: Matsukawa, T Kanemaru, S Tokunaga, K Itoh, J
Citation: T. Matsukawa et al., Individual tip evaluation in Si field emitter arrays by electrostatic lensprojector, J VAC SCI B, 18(2), 2000, pp. 952-955
Effects of conduction type on field-electron emission from single Si emitter tips with extraction gate
Authors: Matsukawa, T Kanemaru, S Tokunaga, K Itoh, J
Citation: T. Matsukawa et al., Effects of conduction type on field-electron emission from single Si emitter tips with extraction gate, J VAC SCI B, 18(2), 2000, pp. 1111-1114
Highly suppressed short-channel effects in ultrathin SOI n-MOSFET's
Authors: Suzuki, E Ishii, K Kanemaru, S Maeda, T Tsutsumi, T Sekigawa, T Nagai, K Hiroshima, H
Citation: E. Suzuki et al., Highly suppressed short-channel effects in ultrathin SOI n-MOSFET's, IEEE DEVICE, 47(2), 2000, pp. 354-359
Single electron memory characteristic of silicon nanodot nanowire transistor
Authors: Tsutsumi, T Ishii, K Suzuki, E Hiroshima, H Yamanaka, M Sakata, I Kanemaru, S Hazra, S Maeda, T Tomizawa, K
Citation: T. Tsutsumi et al., Single electron memory characteristic of silicon nanodot nanowire transistor, ELECTR LETT, 36(15), 2000, pp. 1322-1323
Fabrication of 40-150 nm gate length ultrathin n-MOSFETs using epitaxial layer transfer SOI wafers
Authors: Ishii, K Suzuki, E Kanemaru, S Maeda, T Tsutsumi, T Nagai, K Sekigawa, T Hiroshima, H
Citation: K. Ishii et al., Fabrication of 40-150 nm gate length ultrathin n-MOSFETs using epitaxial layer transfer SOI wafers, JPN J A P 1, 38(4B), 1999, pp. 2492-2495
Emission characteristics of amorphous silicon field emitter arrays sealed in a vacuum package
Authors: Gamo, H Kai, T Kanemaru, S Toh, J
Citation: H. Gamo et al., Emission characteristics of amorphous silicon field emitter arrays sealed in a vacuum package, JPN J A P 1, 38(12B), 1999, pp. 7213-7216
Electrical characteristics of air-bridge-structured silicon nanowire fabricated by micromachining a silicon-on-insulator substrate
Authors: Fujii, H Kanemaru, S Matsukawa, T Itoh, J
Citation: H. Fujii et al., Electrical characteristics of air-bridge-structured silicon nanowire fabricated by micromachining a silicon-on-insulator substrate, JPN J A P 1, 38(12B), 1999, pp. 7237-7240
Plane-view observation technique of silicon nanowires by transmission electron microscopy
Authors: Tsutsumi, T Suzuki, E Ishii, K Kanemaru, S Maeda, T Tomizawa, K
Citation: T. Tsutsumi et al., Plane-view observation technique of silicon nanowires by transmission electron microscopy, J VAC SCI B, 17(5), 1999, pp. 1897-1902
Low-voltage operation from the tower structure metal-oxide-semiconductor field-effect transistor Si field emitter
Authors: Koga, K Kanemaru, S Matsukawa, T Itoh, J
Citation: K. Koga et al., Low-voltage operation from the tower structure metal-oxide-semiconductor field-effect transistor Si field emitter, J VAC SCI B, 17(2), 1999, pp. 588-591
Fabrication technology of ultrafine SiO2 masks and Si nanowires using oxidation of vertical sidewalls of a poly-Si layer
Authors: Tsutsumi, T Tomizawa, K Ishii, K Kanemaru, S Maeda, T Suzuki, E
Citation: T. Tsutsumi et al., Fabrication technology of ultrafine SiO2 masks and Si nanowires using oxidation of vertical sidewalls of a poly-Si layer, J VAC SCI B, 17(1), 1999, pp. 77-81
Improvement of electron emission characteristics of Si field emitter arrays by surface modification
Authors: Ehara, K Kanemaru, S Matsukawa, T Itoh, J
Citation: K. Ehara et al., Improvement of electron emission characteristics of Si field emitter arrays by surface modification, APPL SURF S, 146(1-4), 1999, pp. 172-176
A field emitter array monolithically integrated with a thin-film transistor on glass for display applications
Authors: Gamo, H Kanemaru, S Itoh, J
Citation: H. Gamo et al., A field emitter array monolithically integrated with a thin-film transistor on glass for display applications, APPL SURF S, 146(1-4), 1999, pp. 187-192
Stable emission from a MOSFET-structured emitter tip in poor vacuum
Authors: Kanemaru, S Hirano, T Honda, K Itoh, J
Citation: S. Kanemaru et al., Stable emission from a MOSFET-structured emitter tip in poor vacuum, APPL SURF S, 146(1-4), 1999, pp. 198-202
Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer
Authors: Fujii, H Kanemaru, S Hiroshima, H Gorwadkar, SM Matsukawa, T Itoh, J
Citation: H. Fujii et al., Fabrication and characterization of a nanogap edge emitter with a silicon-on-insulator wafer, APPL SURF S, 146(1-4), 1999, pp. 203-208
Optimization of transistor structure for transistor-stabilized field emitter arrays
Authors: Matsukawa, T Koga, K Kanemaru, S Tanoue, H Itoh, J
Citation: T. Matsukawa et al., Optimization of transistor structure for transistor-stabilized field emitter arrays, IEEE DEVICE, 46(11), 1999, pp. 2261-2264
Air-bridge-structured silicon nanowire and anomalous conductivity
Authors: Fujii, H Kanemaru, S Matsukawa, T Itoh, J
Citation: H. Fujii et al., Air-bridge-structured silicon nanowire and anomalous conductivity, APPL PHYS L, 75(25), 1999, pp. 3986-3988
Fabrication of a new field emitter array with a built-in thin-film transistor on glass
Authors: Gamo, H Kanemaru, S Itoh, J
Citation: H. Gamo et al., Fabrication of a new field emitter array with a built-in thin-film transistor on glass, JPN J A P 1, 37(12B), 1998, pp. 7134-7137
Risultati: 1-25 | 26-27