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Results: 1-25 | 26-35
Results: 1-25/35
Recent progress and current issues in SiC semiconductor devices for power applications
Authors: Johnson, CM Wright, NG Uren, MJ Hilton, KP Rahimo, M Hinchley, DA Knights, AP Morrison, DJ Horsfall, AB Ortolland, S O'Neill, AG
Citation: Cm. Johnson et al., Recent progress and current issues in SiC semiconductor devices for power applications, IEE P-CIRC, 148(2), 2001, pp. 101-108
1.5 mu m electroluminescence from organic light emitting diodes integratedon silicon substrates
Authors: Curry, RJ Gillin, WP Knights, AP Gwilliam, R
Citation: Rj. Curry et al., 1.5 mu m electroluminescence from organic light emitting diodes integratedon silicon substrates, OPT MATER, 17(1-2), 2001, pp. 161-163
Development of a novel tool for semiconductor process control
Authors: Gwilliam, RM Knights, AP Wendler, E Sealy, BJ Burrows, CP Coleman, PG
Citation: Rm. Gwilliam et al., Development of a novel tool for semiconductor process control, MAT SCI E B, 80(1-3), 2001, pp. 60
The effect of substrate temperature on the isolation of n-type GaAs layersusing MeV boron implantation
Authors: Ahmed, S Knights, AP Gwilliam, R Sealy, BJ
Citation: S. Ahmed et al., The effect of substrate temperature on the isolation of n-type GaAs layersusing MeV boron implantation, SEMIC SCI T, 16(3), 2001, pp. L17-L19
Characterisation of a coplanar CVD diamond radiation detector
Authors: Galbiati, A Breese, MBH Knights, AP Sealy, B Sellin, PJ
Citation: A. Galbiati et al., Characterisation of a coplanar CVD diamond radiation detector, NUCL INST A, 466(1), 2001, pp. 52-57
Performance of semi-insulating gallium arsenide X-ray pixel detectors withcurrent-integrating readout
Authors: Sellin, PJ Rossi, G Renzi, MJ Knights, AP Eikenberry, EF Tate, MW Barna, SL Wixted, RL Gruner, SM
Citation: Pj. Sellin et al., Performance of semi-insulating gallium arsenide X-ray pixel detectors withcurrent-integrating readout, NUCL INST A, 460(1), 2001, pp. 207-212
Imaging of charge transport properties in polycrystalline CVD diamond using IBIC and IBIL microscopy
Authors: Breese, MBH Sellin, PJ Alves, LC Knights, AP Sussmann, RS Whitehead, AJ
Citation: Mbh. Breese et al., Imaging of charge transport properties in polycrystalline CVD diamond using IBIC and IBIL microscopy, NUCL INST B, 181, 2001, pp. 219-224
The study of lattice damage using slow positrons following low energy B+ implantation of silicon
Authors: Gwilliam, RM Knights, AP Nejim, A Sealy, BJ Burrows, CP Malik, F Coleman, PG
Citation: Rm. Gwilliam et al., The study of lattice damage using slow positrons following low energy B+ implantation of silicon, NUCL INST B, 175, 2001, pp. 62-67
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
Authors: Lourenco, MA Knights, AP Homewood, KP Gwilliam, RM Simpson, PJ Mascher, P
Citation: Ma. Lourenco et al., A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy, NUCL INST B, 175, 2001, pp. 300-304
Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots
Authors: Surkova, T Patane, A Eaves, L Main, PC Henini, M Polimeni, A Knights, AP Jeynes, C
Citation: T. Surkova et al., Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots, J APPL PHYS, 89(11), 2001, pp. 6044-6047
Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures
Authors: Knights, AP Gwilliam, RM Sealy, BJ Grasby, TJ Parry, CP Fulgoni, DJF Phillips, PJ Whall, TE Parker, EHC Coleman, PG
Citation: Ap. Knights et al., Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures, J APPL PHYS, 89(1), 2001, pp. 76-79
Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon
Authors: Knights, AP Coleman, PG
Citation: Ap. Knights et Pg. Coleman, Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon, DEFECT DIFF, 183-1, 2000, pp. 41-52
Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation
Authors: Morrison, DJ Wright, NG Horsfall, AB Johnson, CM O'Neill, AG Knights, AP Hilton, KP Uren, MJ
Citation: Dj. Morrison et al., Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation, SOL ST ELEC, 44(11), 2000, pp. 1879-1885
Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation
Authors: Knights, AP Lourenco, MA Homewood, KP Morrison, DJ Wright, NG Ortolland, S Johnson, CM O'Neill, AG Coleman, PG Hilton, KP Uren, MJ
Citation: Ap. Knights et al., Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation, J APPL PHYS, 87(8), 2000, pp. 3973-3977
Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs
Authors: Knights, AP Ruffell, S Simpson, PJ
Citation: Ap. Knights et al., Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs, J APPL PHYS, 87(2), 2000, pp. 663-667
GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation
Authors: Percival, C Houston, PA Woodhead, J Al-Khafaji, M Hill, G Roberts, JS Knights, AP
Citation: C. Percival et al., GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation, IEEE DEVICE, 47(9), 2000, pp. 1769-1772
Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800 degrees C
Authors: Hughes, PJ Knights, AP Weiss, BL Ojha, S
Citation: Pj. Hughes et al., Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800 degrees C, ELECTR LETT, 36(5), 2000, pp. 427-428
Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy
Authors: Sellin, PJ Breese, MBH Knights, AP Alves, LC Sussmann, RS Whitehead, AJ
Citation: Pj. Sellin et al., Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy, APPL PHYS L, 77(6), 2000, pp. 913-915
Silicon-based organic light-emitting diode operating at a wavelength of 1.5 mu m
Authors: Curry, RJ Gillin, WP Knights, AP Gwilliam, R
Citation: Rj. Curry et al., Silicon-based organic light-emitting diode operating at a wavelength of 1.5 mu m, APPL PHYS L, 77(15), 2000, pp. 2271-2273
Applying slow positrons to the study of ion implantation induced defects in GaAs
Authors: Knights, AP Malik, F Coleman, PG Gwilliam, R Sealy, BJ
Citation: Ap. Knights et al., Applying slow positrons to the study of ion implantation induced defects in GaAs, MAT SCI E B, 66(1-3), 1999, pp. 146-150
Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si
Authors: Coleman, PG Knights, AP
Citation: Pg. Coleman et Ap. Knights, Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si, APPL SURF S, 149(1-4), 1999, pp. 82-86
Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy
Authors: Burrows, CP Knights, AP Coleman, PG
Citation: Cp. Burrows et al., Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy, APPL SURF S, 149(1-4), 1999, pp. 135-139
Depth profiling of defects in nitrogen implanted silicon using a slow positron beam
Authors: Taylor, JW Saleh, AS Rice-Evans, PC Knights, AP Jeynes, C
Citation: Jw. Taylor et al., Depth profiling of defects in nitrogen implanted silicon using a slow positron beam, APPL SURF S, 149(1-4), 1999, pp. 175-180
Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy
Authors: Knights, AP Nejim, A Barradas, NP Coleman, PG
Citation: Ap. Knights et al., Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy, NUCL INST B, 148(1-4), 1999, pp. 340-344
RES and ERDA study of ion beam synthesised amorphous gallium nitride
Authors: Barradas, NP Almeida, SA Jeynes, C Knights, AP Silva, SRP Sealy, BJ
Citation: Np. Barradas et al., RES and ERDA study of ion beam synthesised amorphous gallium nitride, NUCL INST B, 148(1-4), 1999, pp. 463-467
Risultati: 1-25 | 26-35