Authors:
Johnson, CM
Wright, NG
Uren, MJ
Hilton, KP
Rahimo, M
Hinchley, DA
Knights, AP
Morrison, DJ
Horsfall, AB
Ortolland, S
O'Neill, AG
Citation: Cm. Johnson et al., Recent progress and current issues in SiC semiconductor devices for power applications, IEE P-CIRC, 148(2), 2001, pp. 101-108
Authors:
Curry, RJ
Gillin, WP
Knights, AP
Gwilliam, R
Citation: Rj. Curry et al., 1.5 mu m electroluminescence from organic light emitting diodes integratedon silicon substrates, OPT MATER, 17(1-2), 2001, pp. 161-163
Authors:
Ahmed, S
Knights, AP
Gwilliam, R
Sealy, BJ
Citation: S. Ahmed et al., The effect of substrate temperature on the isolation of n-type GaAs layersusing MeV boron implantation, SEMIC SCI T, 16(3), 2001, pp. L17-L19
Authors:
Breese, MBH
Sellin, PJ
Alves, LC
Knights, AP
Sussmann, RS
Whitehead, AJ
Citation: Mbh. Breese et al., Imaging of charge transport properties in polycrystalline CVD diamond using IBIC and IBIL microscopy, NUCL INST B, 181, 2001, pp. 219-224
Authors:
Gwilliam, RM
Knights, AP
Nejim, A
Sealy, BJ
Burrows, CP
Malik, F
Coleman, PG
Citation: Rm. Gwilliam et al., The study of lattice damage using slow positrons following low energy B+ implantation of silicon, NUCL INST B, 175, 2001, pp. 62-67
Authors:
Lourenco, MA
Knights, AP
Homewood, KP
Gwilliam, RM
Simpson, PJ
Mascher, P
Citation: Ma. Lourenco et al., A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy, NUCL INST B, 175, 2001, pp. 300-304
Authors:
Surkova, T
Patane, A
Eaves, L
Main, PC
Henini, M
Polimeni, A
Knights, AP
Jeynes, C
Citation: T. Surkova et al., Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots, J APPL PHYS, 89(11), 2001, pp. 6044-6047
Citation: Ap. Knights et al., Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures, J APPL PHYS, 89(1), 2001, pp. 76-79
Citation: Ap. Knights et Pg. Coleman, Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon, DEFECT DIFF, 183-1, 2000, pp. 41-52
Authors:
Morrison, DJ
Wright, NG
Horsfall, AB
Johnson, CM
O'Neill, AG
Knights, AP
Hilton, KP
Uren, MJ
Citation: Dj. Morrison et al., Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation, SOL ST ELEC, 44(11), 2000, pp. 1879-1885
Authors:
Knights, AP
Lourenco, MA
Homewood, KP
Morrison, DJ
Wright, NG
Ortolland, S
Johnson, CM
O'Neill, AG
Coleman, PG
Hilton, KP
Uren, MJ
Citation: Ap. Knights et al., Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation, J APPL PHYS, 87(8), 2000, pp. 3973-3977
Citation: Ap. Knights et al., Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs, J APPL PHYS, 87(2), 2000, pp. 663-667
Authors:
Percival, C
Houston, PA
Woodhead, J
Al-Khafaji, M
Hill, G
Roberts, JS
Knights, AP
Citation: C. Percival et al., GaAs quantum wire lasers grown on v-grooved substrates isolated by self-aligned ion implantation, IEEE DEVICE, 47(9), 2000, pp. 1769-1772
Citation: Pj. Hughes et al., Optical characteristics of photosensitive Ge-doped SiO2 planar waveguides implanted with protons at 800 degrees C, ELECTR LETT, 36(5), 2000, pp. 427-428
Authors:
Sellin, PJ
Breese, MBH
Knights, AP
Alves, LC
Sussmann, RS
Whitehead, AJ
Citation: Pj. Sellin et al., Imaging of charge transport in polycrystalline diamond using ion-beam-induced charge microscopy, APPL PHYS L, 77(6), 2000, pp. 913-915
Authors:
Knights, AP
Malik, F
Coleman, PG
Gwilliam, R
Sealy, BJ
Citation: Ap. Knights et al., Applying slow positrons to the study of ion implantation induced defects in GaAs, MAT SCI E B, 66(1-3), 1999, pp. 146-150
Citation: Pg. Coleman et Ap. Knights, Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si, APPL SURF S, 149(1-4), 1999, pp. 82-86
Citation: Cp. Burrows et al., Near-surface lateral vacancy migration in O+-implanted SiC studied by positron re-emission microscopy, APPL SURF S, 149(1-4), 1999, pp. 135-139
Authors:
Taylor, JW
Saleh, AS
Rice-Evans, PC
Knights, AP
Jeynes, C
Citation: Jw. Taylor et al., Depth profiling of defects in nitrogen implanted silicon using a slow positron beam, APPL SURF S, 149(1-4), 1999, pp. 175-180
Authors:
Knights, AP
Nejim, A
Barradas, NP
Coleman, PG
Citation: Ap. Knights et al., Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy, NUCL INST B, 148(1-4), 1999, pp. 340-344