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Results: 1-22 |
Results: 22
FIRST STAGE OF OXYGEN AGGREGATION IN SILICON - THE OXYGEN DIMER
Authors: OBERG S EWELS CP JONES R HALLBERG T LINDSTROM JL MURIN LI BRIDDON PR
Citation: S. Oberg et al., FIRST STAGE OF OXYGEN AGGREGATION IN SILICON - THE OXYGEN DIMER, Physical review letters, 81(14), 1998, pp. 2930-2933
COMMENT ON MICROSCOPIC IDENTIFICATION AND ELECTRONIC-STRUCTURE OF A DI-HYDROGEN-VACANCY COMPLEX IN SILICON BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE - REPLY
Authors: CHEN WM AWADELKARIM OO MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation: Wm. Chen et al., COMMENT ON MICROSCOPIC IDENTIFICATION AND ELECTRONIC-STRUCTURE OF A DI-HYDROGEN-VACANCY COMPLEX IN SILICON BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE - REPLY, Physical review letters, 80(2), 1998, pp. 423-423
EXPERIMENTAL-EVIDENCE OF THE OXYGEN DIMER IN SILICON
Authors: MURIN LI HALLBERG T MARKEVICH VP LINDSTROM JL
Citation: Li. Murin et al., EXPERIMENTAL-EVIDENCE OF THE OXYGEN DIMER IN SILICON, Physical review letters, 80(1), 1998, pp. 93-96
NEW INFRARED-ABSORPTION BANDS RELATED TO INTERSTITIAL OXYGEN IN SILICON
Authors: HALLBERG T MURIN LI LINDSTROM JL MARKEVICH VP
Citation: T. Hallberg et al., NEW INFRARED-ABSORPTION BANDS RELATED TO INTERSTITIAL OXYGEN IN SILICON, Journal of applied physics, 84(5), 1998, pp. 2466-2470
ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC
Authors: DOYLE JP LINNARSSON MK PELLEGRINO P KESKITALO N SVENSSON BG SCHONER A NORDELL N LINDSTROM JL
Citation: Jp. Doyle et al., ELECTRICALLY ACTIVE POINT-DEFECTS IN N-TYPE 4H-SIC, Journal of applied physics, 84(3), 1998, pp. 1354-1357
CAPTURE CROSS-SECTIONS OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN 6H-SIC
Authors: HEMMINGSSON C SON NT KORDINA O JANZEN E LINDSTROM JL
Citation: C. Hemmingsson et al., CAPTURE CROSS-SECTIONS OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN 6H-SIC, Journal of applied physics, 84(2), 1998, pp. 704-708
PHOTOLUMINESCENCE OF GAN - EFFECT OF ELECTRON-IRRADIATION
Authors: BUYANOVA IA WAGNER M CHEN WM MONEMAR B LINDSTROM JL AMANO H AKASAKI I
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF GAN - EFFECT OF ELECTRON-IRRADIATION, Applied physics letters, 73(20), 1998, pp. 2968-2970
DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC
Authors: SON NT SORMAN E SINGH M CHEN WM HALLIN C KORDINA O MONEMAR B LINDSTROM JL JANZEN E
Citation: Nt. Son et al., DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1378-1380
CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC
Authors: HEMMINGSSON C SON NT KORDINA O JANZEN E LINDSTROM JL SAVAGE S NORDELL N
Citation: C. Hemmingsson et al., CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 336-339
OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN ELECTRON-IRRADIATED 3C SIC LAYERS
Authors: SON NT SORMAN E CHEN WM HALLIN C KORDINA O MONEMAR B JANZEN E LINDSTROM JL
Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN ELECTRON-IRRADIATED 3C SIC LAYERS, Physical review. B, Condensed matter, 55(5), 1997, pp. 2863-2866
DEEP-LEVEL DEFECTS IN ELECTRON-IRRADIATED 4H SIC EPITAXIAL LAYERS
Authors: HEMMINGSSON C SON NT KORDINA O BERGMAN JP JANZEN E LINDSTROM JL SAVAGE S NORDELL N
Citation: C. Hemmingsson et al., DEEP-LEVEL DEFECTS IN ELECTRON-IRRADIATED 4H SIC EPITAXIAL LAYERS, Journal of applied physics, 81(9), 1997, pp. 6155-6159
ACTIVATION-ENERGIES FOR THE FORMATION OF OXYGEN CLUSTERS RELATED TO THE THERMAL DONORS IN SILICON
Authors: HALLBERG T LINDSTROM JL
Citation: T. Hallberg et Jl. Lindstrom, ACTIVATION-ENERGIES FOR THE FORMATION OF OXYGEN CLUSTERS RELATED TO THE THERMAL DONORS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 13-15
PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON
Authors: BUYANOVA IA HENRY A MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SF6-O-2 PLASMA-ETCHING OF SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 100-103
THERMAL DONOR FORMATION IN ALUMINUM-DOPED SILICON
Authors: LINDSTROM JL HALLBERG T
Citation: Jl. Lindstrom et T. Hallberg, THERMAL DONOR FORMATION IN ALUMINUM-DOPED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 150-153
DOMINANT RECOMBINATION CENTER IN ELECTRON-IRRADIATED 3C SIC
Authors: SON NT SORMAN E CHEN WM SINGH M HALLIN C KORDINA O MONEMAR B JANZEN E LINDSTROM JL
Citation: Nt. Son et al., DOMINANT RECOMBINATION CENTER IN ELECTRON-IRRADIATED 3C SIC, Journal of applied physics, 79(7), 1996, pp. 3784-3786
INFRARED VIBRATIONAL BANDS RELATED TO THE THERMAL DONORS IN SILICON
Authors: HALLBERG T LINDSTROM JL
Citation: T. Hallberg et Jl. Lindstrom, INFRARED VIBRATIONAL BANDS RELATED TO THE THERMAL DONORS IN SILICON, Journal of applied physics, 79(10), 1996, pp. 7570-7581
PHOTOLUMINESCENCE OF DEFECTS INDUCED IN SILICON BY SF6 O-2 REACTIVE-ION ETCHING/
Authors: BUYANOVA IA HENRY A MONEMAR B LINDSTROM JL OEHRLEIN GS
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF DEFECTS INDUCED IN SILICON BY SF6 O-2 REACTIVE-ION ETCHING/, Journal of applied physics, 78(5), 1995, pp. 3348-3352
VIBRATIONAL INFRARED-ABSORPTION BANDS RELATED TO THE THERMAL DONORS IN SILICON
Authors: LINDSTROM JL HALLBERG T
Citation: Jl. Lindstrom et T. Hallberg, VIBRATIONAL INFRARED-ABSORPTION BANDS RELATED TO THE THERMAL DONORS IN SILICON, Journal of applied physics, 77(6), 1995, pp. 2684-2690
OBSERVATION OF RAPID DIRECT CHARGE-TRANSFER BETWEEN DEEP DEFECTS IN SILICON
Authors: FRENS AM BENNEBROEK MT ZAKRZEWSKI A SCHMIDT J CHEN WM JANZEN E LINDSTROM JL MONEMAR B
Citation: Am. Frens et al., OBSERVATION OF RAPID DIRECT CHARGE-TRANSFER BETWEEN DEEP DEFECTS IN SILICON, Physical review letters, 72(18), 1994, pp. 2939-2942
CLUSTERING OF OXYGEN-ATOMS IN SILICON AT 450-DEGREES-C - A NEW APPROACH TO THERMAL DONOR FORMATION
Authors: LINDSTROM JL HALLBERG T
Citation: Jl. Lindstrom et T. Hallberg, CLUSTERING OF OXYGEN-ATOMS IN SILICON AT 450-DEGREES-C - A NEW APPROACH TO THERMAL DONOR FORMATION, Physical review letters, 72(17), 1994, pp. 2729-2732
MERCURY-RELATED LUMINESCENT CENTER IN SILICON
Authors: HENRY A MONEMAR B BERGMAN JP LINDSTROM JL HOLTZ PO ZHANG Y CORBETT JW
Citation: A. Henry et al., MERCURY-RELATED LUMINESCENT CENTER IN SILICON, Physical review. B, Condensed matter, 47(20), 1993, pp. 13309-13313
A PHOTOLUMINESCENCE STUDY OF CF4 REACTIVE-ION-ETCHED SILICON - VARIOUS PROCESS CONDITIONS AND MAGNETICALLY ENHANCED ETCHING
Authors: HENRY A MONEMAR B LINDSTROM JL OEHRLEIN GS MALINOWSKI JC
Citation: A. Henry et al., A PHOTOLUMINESCENCE STUDY OF CF4 REACTIVE-ION-ETCHED SILICON - VARIOUS PROCESS CONDITIONS AND MAGNETICALLY ENHANCED ETCHING, Journal of applied physics, 74(10), 1993, pp. 6349-6352
Risultati: 1-22 |