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Results: 1-18 |
Results: 18
LINEARIZATION OF 1.3-MU-M MQW ELECTROABSORPTION MODULATORS USING AN ALL-OPTICAL FREQUENCY-INSENSITIVE TECHNIQUE
Authors: LOI KK HODIAK JH MEI XB TU CW CHANG WSC
Citation: Kk. Loi et al., LINEARIZATION OF 1.3-MU-M MQW ELECTROABSORPTION MODULATORS USING AN ALL-OPTICAL FREQUENCY-INSENSITIVE TECHNIQUE, IEEE photonics technology letters, 10(7), 1998, pp. 964-966
LOW-LOSS 1.3-MU-M MQW ELECTROABSORPTION MODULATORS FOR HIGH-LINEARITYANALOG OPTICAL LINKS
Authors: LOI KK HODIAK JH MEI XB TU CW CHANO WSC NICHOLS DT LEMBO LJ BROCK JC
Citation: Kk. Loi et al., LOW-LOSS 1.3-MU-M MQW ELECTROABSORPTION MODULATORS FOR HIGH-LINEARITYANALOG OPTICAL LINKS, IEEE photonics technology letters, 10(11), 1998, pp. 1572-1574
38GHZ BANDWIDTH 1.3 MU-M MQW ELECTROABSORPTION MODULATORS FOR RF PHOTONIC LINKS
Authors: LOI KK MEI XB HODIAK JH TU CW CHANG WSC
Citation: Kk. Loi et al., 38GHZ BANDWIDTH 1.3 MU-M MQW ELECTROABSORPTION MODULATORS FOR RF PHOTONIC LINKS, Electronics Letters, 34(10), 1998, pp. 1018-1019
STRAIN-COMPENSATED INASP GAINP MULTIPLE-QUANTUM-WELL WAVE-GUIDE MODULATORS AND IN-SITU MONITORED ALGAAS/ALAS MIRRORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/
Authors: TU CW MEI XB
Citation: Cw. Tu et Xb. Mei, STRAIN-COMPENSATED INASP GAINP MULTIPLE-QUANTUM-WELL WAVE-GUIDE MODULATORS AND IN-SITU MONITORED ALGAAS/ALAS MIRRORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Materials chemistry and physics, 51(1), 1997, pp. 1-5
IMPROVED ELECTROABSORPTION PROPERTIES IN 1.3 MU-M MQW WAVE-GUIDE MODULATORS BY A MODIFIED DOPING PROFILE
Authors: MEI XB LOI KK CHANG WSC TU CW
Citation: Xb. Mei et al., IMPROVED ELECTROABSORPTION PROPERTIES IN 1.3 MU-M MQW WAVE-GUIDE MODULATORS BY A MODIFIED DOPING PROFILE, Journal of crystal growth, 175, 1997, pp. 994-998
QUANTUM-CONFINED STARK-EFFECT NEAR 1.5-MU-M WAVELENGTH IN INAS0.53P0.47 GAYIN1-YP STRAIN-BALANCED QUANTUM-WELLS/
Authors: MEI XB BI WG TU CW CHOU LJ HSIEH KC
Citation: Xb. Mei et al., QUANTUM-CONFINED STARK-EFFECT NEAR 1.5-MU-M WAVELENGTH IN INAS0.53P0.47 GAYIN1-YP STRAIN-BALANCED QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2327-2330
HIGH-EFFICIENCY 1.3 MU-M INASP-GAINP MQW ELECTROABSORPTION WAVE-GUIDEMODULATORS FOR MICROWAVE FIBEROPTIC LINKS
Authors: LOI KK SAKAMOTO I MEI XB TU CW CHANG WSC
Citation: Kk. Loi et al., HIGH-EFFICIENCY 1.3 MU-M INASP-GAINP MQW ELECTROABSORPTION WAVE-GUIDEMODULATORS FOR MICROWAVE FIBEROPTIC LINKS, IEEE photonics technology letters, 8(5), 1996, pp. 626-628
ACCURATE DE-EMBEDDING TECHNIQUE FOR ON-CHIP SMALL-SIGNAL CHARACTERIZATION OF HIGH-FREQUENCY OPTICAL MODULATOR
Authors: LOI KK SAKAMOTO I SHAO XF HOU HQ LIAO HH MEI XB CHENG AN TU CW CHANG WSC
Citation: Kk. Loi et al., ACCURATE DE-EMBEDDING TECHNIQUE FOR ON-CHIP SMALL-SIGNAL CHARACTERIZATION OF HIGH-FREQUENCY OPTICAL MODULATOR, IEEE photonics technology letters, 8(3), 1996, pp. 402-404
A NOVEL ALL-OPTICAL BISTABLE DEVICE IN A NONINTERFEROMETRIC DOUBLE P-I(ESQWS)-N DIODE STRUCTURE
Authors: KWON OK KIM K HYUN KS CHOI YW LEE EH MEI XB TU CW
Citation: Ok. Kwon et al., A NOVEL ALL-OPTICAL BISTABLE DEVICE IN A NONINTERFEROMETRIC DOUBLE P-I(ESQWS)-N DIODE STRUCTURE, IEEE photonics technology letters, 8(2), 1996, pp. 224-226
TEM STUDY OF THE STRUCTURE OF GAAS ON VICINAL SI(001) SURFACE GROWN BY MBE
Authors: YANG Y CHEN H ZHOU YQ MEI XB HUANG Q ZHOU JM LI FH
Citation: Y. Yang et al., TEM STUDY OF THE STRUCTURE OF GAAS ON VICINAL SI(001) SURFACE GROWN BY MBE, Journal of Materials Science, 31(3), 1996, pp. 829-833
GROWTH-STUDIES OF GAP ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: BI WG MEI XB TU CW
Citation: Wg. Bi et al., GROWTH-STUDIES OF GAP ON SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 256-262
STRAIN-COMPENSATED INASP GAINP MULTIPLE-QUANTUM WELLS FOR 1.3 MU-M WAVE-GUIDE MODULATORS/
Authors: MEI XB LOI KK WIEDER HH CHANG WSC TU CW
Citation: Xb. Mei et al., STRAIN-COMPENSATED INASP GAINP MULTIPLE-QUANTUM WELLS FOR 1.3 MU-M WAVE-GUIDE MODULATORS/, Applied physics letters, 68(1), 1996, pp. 90-92
GROWTH AND CHARACTERIZATION OF STRAIN-COMPENSATED INASP GAINP AND INGAAS/GAINP MULTIPLE-QUANTUM WELLS/
Authors: TU CW MEI XB YAN CH BI WG
Citation: Cw. Tu et al., GROWTH AND CHARACTERIZATION OF STRAIN-COMPENSATED INASP GAINP AND INGAAS/GAINP MULTIPLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 166-170
PSEUDOMORPHIC ALINPINP HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: HSIN YM HO MC MEI XB LIAO HH CHIN TP TU CW ASBECK PM
Citation: Ym. Hsin et al., PSEUDOMORPHIC ALINPINP HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 31(2), 1995, pp. 141-142
TRANSIENT PHOTOLUMINESCENCE STUDIES OF TUNNELING IN ASYMMETRIC DOUBLE-QUANTUM WELLS
Authors: HUANG XG CAI ZG LI QX YU ZX WANG TH MEI XB YANG GZ
Citation: Xg. Huang et al., TRANSIENT PHOTOLUMINESCENCE STUDIES OF TUNNELING IN ASYMMETRIC DOUBLE-QUANTUM WELLS, Chinese Science Bulletin, 39(3), 1994, pp. 193-197
ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS GAXAL1-XAS SUPERLATTICES/
Authors: ZHANG YH JIANG DS LI F WU RH ZHOU JM MEI XB
Citation: Yh. Zhang et al., ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS GAXAL1-XAS SUPERLATTICES/, Physical review. B, Condensed matter, 48(16), 1993, pp. 12296-12299
MBE-GAAS ON SI, COMPARISON BETWEEN 2 GAAS CRYSTAL ORIENTATIONS ON VICINAL SI(100) SURFACE
Authors: MEI XB HUANG Q ZHOU JM
Citation: Xb. Mei et al., MBE-GAAS ON SI, COMPARISON BETWEEN 2 GAAS CRYSTAL ORIENTATIONS ON VICINAL SI(100) SURFACE, Journal of crystal growth, 127(1-4), 1993, pp. 102-106
WANNIER-STARK LOCALIZATION IN INGAAS GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES/
Authors: LIU W ZHANG YH JIANG DS WANG RZ ZHOU JM MEI XB
Citation: W. Liu et al., WANNIER-STARK LOCALIZATION IN INGAAS GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES/, Journal of applied physics, 74(6), 1993, pp. 4274-4276
Risultati: 1-18 |