Citation: Kk. Loi et al., LINEARIZATION OF 1.3-MU-M MQW ELECTROABSORPTION MODULATORS USING AN ALL-OPTICAL FREQUENCY-INSENSITIVE TECHNIQUE, IEEE photonics technology letters, 10(7), 1998, pp. 964-966
Authors:
LOI KK
HODIAK JH
MEI XB
TU CW
CHANO WSC
NICHOLS DT
LEMBO LJ
BROCK JC
Citation: Kk. Loi et al., LOW-LOSS 1.3-MU-M MQW ELECTROABSORPTION MODULATORS FOR HIGH-LINEARITYANALOG OPTICAL LINKS, IEEE photonics technology letters, 10(11), 1998, pp. 1572-1574
Citation: Kk. Loi et al., 38GHZ BANDWIDTH 1.3 MU-M MQW ELECTROABSORPTION MODULATORS FOR RF PHOTONIC LINKS, Electronics Letters, 34(10), 1998, pp. 1018-1019
Citation: Cw. Tu et Xb. Mei, STRAIN-COMPENSATED INASP GAINP MULTIPLE-QUANTUM-WELL WAVE-GUIDE MODULATORS AND IN-SITU MONITORED ALGAAS/ALAS MIRRORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Materials chemistry and physics, 51(1), 1997, pp. 1-5
Citation: Xb. Mei et al., IMPROVED ELECTROABSORPTION PROPERTIES IN 1.3 MU-M MQW WAVE-GUIDE MODULATORS BY A MODIFIED DOPING PROFILE, Journal of crystal growth, 175, 1997, pp. 994-998
Citation: Xb. Mei et al., QUANTUM-CONFINED STARK-EFFECT NEAR 1.5-MU-M WAVELENGTH IN INAS0.53P0.47 GAYIN1-YP STRAIN-BALANCED QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2327-2330
Citation: Kk. Loi et al., HIGH-EFFICIENCY 1.3 MU-M INASP-GAINP MQW ELECTROABSORPTION WAVE-GUIDEMODULATORS FOR MICROWAVE FIBEROPTIC LINKS, IEEE photonics technology letters, 8(5), 1996, pp. 626-628
Authors:
LOI KK
SAKAMOTO I
SHAO XF
HOU HQ
LIAO HH
MEI XB
CHENG AN
TU CW
CHANG WSC
Citation: Kk. Loi et al., ACCURATE DE-EMBEDDING TECHNIQUE FOR ON-CHIP SMALL-SIGNAL CHARACTERIZATION OF HIGH-FREQUENCY OPTICAL MODULATOR, IEEE photonics technology letters, 8(3), 1996, pp. 402-404
Authors:
KWON OK
KIM K
HYUN KS
CHOI YW
LEE EH
MEI XB
TU CW
Citation: Ok. Kwon et al., A NOVEL ALL-OPTICAL BISTABLE DEVICE IN A NONINTERFEROMETRIC DOUBLE P-I(ESQWS)-N DIODE STRUCTURE, IEEE photonics technology letters, 8(2), 1996, pp. 224-226
Authors:
YANG Y
CHEN H
ZHOU YQ
MEI XB
HUANG Q
ZHOU JM
LI FH
Citation: Y. Yang et al., TEM STUDY OF THE STRUCTURE OF GAAS ON VICINAL SI(001) SURFACE GROWN BY MBE, Journal of Materials Science, 31(3), 1996, pp. 829-833
Citation: Cw. Tu et al., GROWTH AND CHARACTERIZATION OF STRAIN-COMPENSATED INASP GAINP AND INGAAS/GAINP MULTIPLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 166-170
Authors:
HUANG XG
CAI ZG
LI QX
YU ZX
WANG TH
MEI XB
YANG GZ
Citation: Xg. Huang et al., TRANSIENT PHOTOLUMINESCENCE STUDIES OF TUNNELING IN ASYMMETRIC DOUBLE-QUANTUM WELLS, Chinese Science Bulletin, 39(3), 1994, pp. 193-197
Citation: Xb. Mei et al., MBE-GAAS ON SI, COMPARISON BETWEEN 2 GAAS CRYSTAL ORIENTATIONS ON VICINAL SI(100) SURFACE, Journal of crystal growth, 127(1-4), 1993, pp. 102-106
Authors:
LIU W
ZHANG YH
JIANG DS
WANG RZ
ZHOU JM
MEI XB
Citation: W. Liu et al., WANNIER-STARK LOCALIZATION IN INGAAS GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES/, Journal of applied physics, 74(6), 1993, pp. 4274-4276