Citation: Se. Huq et al., MICROFABRICATION AND CHARACTERIZATION OF GRIDDED POLYCRYSTALLINE SILICON FIELD EMITTER DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 796-798
Citation: Se. Huq et al., FABRICATION AND CHARACTERIZATION OF ULTRA SHARP SILICON FIELD EMITTERS, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 150-153
Citation: Z. Cui et Pd. Prewett, PROXIMITY CORRECTION OF CHEMICALLY AMPLIFIED RESISTS FOR ELECTRON-BEAM LITHOGRAPHY, Microelectronic engineering, 42, 1998, pp. 183-186
Citation: Va. Kudryashov et al., LOW-VOLTAGE E-BEAM IRRADIATION - A NEW TOOL FOR SUPPRESSION OF AIRBORNE CONTAMINATION EFFECTS IN POSITIVE CHEMICALLY AMPLIFIED RESISTS, Microelectronic engineering, 42, 1998, pp. 203-206
Citation: Se. Huq et al., COMPARATIVE-STUDY OF GATED SINGLE-CRYSTAL SILICON AND POLYSILICON FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2855-2858
Authors:
CUI Z
MOODY RA
LOADER IM
WATSON JG
PREWETT PD
Citation: Z. Cui et al., OPTIMIZED PROCESS FOR ELECTRON-BEAM NANOLITHOGRAPHY USING AZPN114 CHEMICALLY AMPLIFIED RESIST, Microelectronic engineering, 35(1-4), 1997, pp. 145-148
Authors:
KUDRYASHOV VA
KRASNOV VV
PREWETT PD
HALL TJ
Citation: Va. Kudryashov et al., LOW-ENERGY-ELECTRON BEAM LITHOGRAPHY - PATTERN DISTORTION BY CHARGE TRAPPED IN THE RESIST, Microelectronic engineering, 35(1-4), 1997, pp. 165-168
Authors:
KUDRYASHOV VA
KRASNOV VV
PREWETT PD
HALL TJ
Citation: Va. Kudryashov et al., PROCESS LATITUDE ENHANCEMENT FOR 3D STRUCTURE FORMATION IN E-BEAM LITHOGRAPHY, Microelectronic engineering, 35(1-4), 1997, pp. 487-490
Citation: Z. Cui et al., FOCUSED ION-BEAM BIASED REPAIR OF CONVENTIONAL AND PHASE-SHIFT MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3942-3946
Authors:
BOSWELL EC
HUQ SE
HUANG M
PREWETT PD
WILSHAW PR
Citation: Ec. Boswell et al., POLYCRYSTALLINE SILICON FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1910-1913
Citation: Z. Cui et Pd. Prewett, CHARACTERIZATION OF EMBEDDED PHASE-SHIFT MASKS BY REFLECTANCE-TRANSMITTANCE MEASUREMENT, Microelectronic engineering, 30(1-4), 1996, pp. 145-148
Citation: Se. Huq et al., FABRICATION OF SUB-10 NM SILICON TIPS - A NEW APPROACH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2718-2721
Citation: Se. Huq et al., SUB10NM SILICON FIELD EMITTERS PRODUCED BY ELECTRON-BEAM LITHOGRAPHY AND ISOTROPIC PLASMA-ETCHING, Microelectronic engineering, 27(1-4), 1995, pp. 95-98
Citation: Pd. Cui Z",p,"prewett et S. Johnson, TRANSMISSION AND SIDE-LOBE EFFECT IN ATTENUATED PHASE-SHIFT MASKS, Microelectronic engineering, 27(1-4), 1995, pp. 259-262
Authors:
REEVES CM
TURCU ICE
PREWETT PD
GUNDLACH AM
STEVENSON JT
WALTON AJ
ROSS AWS
LAWES RA
ANASTASI P
BURGE R
MITCHELL P
Citation: Cm. Reeves et al., FABRICATION OF 200 NM FIELD-EFFECT TRANSISTOR BY X-RAY-LITHOGRAPHY WITH A LASER-PLASMA X-RAY SOURCE, Electronics Letters, 31(25), 1995, pp. 2218-2219
Authors:
PREWETT PD
MARTIN B
WATSON JG
EASTWOOD AW
JONCKHEERE R
Citation: Pd. Prewett et al., FIB REPAIR OF RETICLE DEFECTS WITH ANTISTAINING-EFFECTS ON OPTICAL LITHOGRAPHY FROM G-LINE TO DUV, Microelectronic engineering, 23(1-4), 1994, pp. 127-130