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Results: 1-25 | 26-27
Results: 1-25/27
Impact of gate tunneling leakage on the operation of NMOS transistors withultra-thin gate oxides
Authors: Lime, F Clerc, R Ghibaudo, G Pananakakis, G Guegan, G
Citation: F. Lime et al., Impact of gate tunneling leakage on the operation of NMOS transistors withultra-thin gate oxides, MICROEL ENG, 59(1-4), 2001, pp. 119-125
A physical compact model for direct tunneling from NMOS inversion layers
Authors: Clerc, R O'Sullivan, P McCarthy, KG Ghibaudo, G Pananakakis, G Mathewson, A
Citation: R. Clerc et al., A physical compact model for direct tunneling from NMOS inversion layers, SOL ST ELEC, 45(10), 2001, pp. 1705-1716
Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions
Authors: Monsieur, F Vincent, E Roy, D Bruyere, S Pananakakis, G Ghibaudo, G
Citation: F. Monsieur et al., Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions, MICROEL REL, 41(9-10), 2001, pp. 1295-1300
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)
Authors: Clerc, R Spinelli, AS Ghibaudo, G Leroux, C Pananakakis, G
Citation: R. Clerc et al., Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm), MICROEL REL, 41(7), 2001, pp. 1027-1030
Wear-out, breakdown occurrence and failure detection in 18-25 angstrom ultrathin oxides
Authors: Monsieur, F Vincent, E Pananakakis, G Ghibaudo, G
Citation: F. Monsieur et al., Wear-out, breakdown occurrence and failure detection in 18-25 angstrom ultrathin oxides, MICROEL REL, 41(7), 2001, pp. 1035-1039
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Masson, P Baron, T Buffet, N Fernandes, A Guillaumot, B
Citation: B. De Salvo et al., Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices, IEEE DEVICE, 48(8), 2001, pp. 1789-1799
Investigation of charging/discharging phenomena in nano-crystal memories
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Baron, T
Citation: B. De Salvo et al., Investigation of charging/discharging phenomena in nano-crystal memories, SUPERLATT M, 28(5-6), 2000, pp. 339-344
A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current, SOL ST ELEC, 44(6), 2000, pp. 895-903
Capacitance-Voltage (C-V) characterization of 20 angstrom thick gate oxide: parameter extraction and modeling
Authors: Clerc, R Devoivre, T Ghibaudo, G Caillat, C Guegan, G Reimbold, G Pananakakis, G
Citation: R. Clerc et al., Capacitance-Voltage (C-V) characterization of 20 angstrom thick gate oxide: parameter extraction and modeling, MICROEL REL, 40(4-5), 2000, pp. 571-575
Electrically and radiation induced leakage currents in thin oxides
Authors: Scarpa, A Riess, P Ghibaudo, G Paccagnella, A Pananakakis, G Ceschia, M Ghidini, G
Citation: A. Scarpa et al., Electrically and radiation induced leakage currents in thin oxides, MICROEL REL, 40(1), 2000, pp. 57-67
Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport
Authors: Riess, P Ghibaudo, G Pananakakis, G
Citation: P. Riess et al., Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport, J APPL PHYS, 87(9), 2000, pp. 4626-4628
Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides
Authors: Riess, P Ceschia, M Paccagnella, A Ghibaudo, G Pananakakis, G
Citation: P. Riess et al., Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides, APPL PHYS L, 76(9), 2000, pp. 1158-1160
A new extrapolation law for data-retention time-to-failure of nonvolatile memories
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Candelier, P Reimbold, G
Citation: B. De Salvo et al., A new extrapolation law for data-retention time-to-failure of nonvolatile memories, IEEE ELEC D, 20(5), 1999, pp. 197-199
Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB)
Authors: Ghibaudo, G Riess, P Bruyere, S DeSalvo, B Jahan, C Scarpa, A Pananakakis, G Vincent, E
Citation: G. Ghibaudo et al., Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB), MICROEL ENG, 49(1-2), 1999, pp. 41-50
On the degradation kinetics of thin oxide layers
Authors: Scarpa, A Pananakakis, G Ghibaudo, G Paccagnella, A Ghidini, G
Citation: A. Scarpa et al., On the degradation kinetics of thin oxide layers, SOL ST ELEC, 43(2), 1999, pp. 221-227
Study of Stress Induced Leakage Current by using high resolution measurements
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., Study of Stress Induced Leakage Current by using high resolution measurements, MICROEL REL, 39(6-7), 1999, pp. 797-802
Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism
Authors: Riess, P Ghibaudo, G Pananakakis, G
Citation: P. Riess et al., Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism, MICROEL REL, 39(6-7), 1999, pp. 803-807
Accelerated dielectric breakdown and wear out standard testing methods andstructures for reliability evaluation of thin oxides
Authors: Ghibaudo, G Pananakakis, G Kies, R Vincent, E Papadas, C
Citation: G. Ghibaudo et al., Accelerated dielectric breakdown and wear out standard testing methods andstructures for reliability evaluation of thin oxides, MICROEL REL, 39(5), 1999, pp. 597-613
On the correlation between SILC and hole fluence throughout the oxide
Authors: Scarpa, A De Salvo, B Ghibaudo, G Pananakakis, G Paccagnella, A Ghidini, G
Citation: A. Scarpa et al., On the correlation between SILC and hole fluence throughout the oxide, MICROEL REL, 39(2), 1999, pp. 197-201
Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides
Authors: Riess, P Ghibaudo, G Pananakakis, G Brini, J
Citation: P. Riess et al., Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides, MICROEL REL, 39(2), 1999, pp. 203-207
ONO and NO interpoly dielectric conduction mechanisms
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Reimbold, G
Citation: B. De Salvo et al., ONO and NO interpoly dielectric conduction mechanisms, MICROEL REL, 39(2), 1999, pp. 235-239
Electric field and temperature dependence of the stress induced leakage current: Fowler-Nordheim or Schottky emission?
Authors: Riess, P Ghibaudo, G Pananakakis, G Brini, J Ghidini, G
Citation: P. Riess et al., Electric field and temperature dependence of the stress induced leakage current: Fowler-Nordheim or Schottky emission?, J NON-CRYST, 245, 1999, pp. 48-53
Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique
Authors: De Salvo, B Ghibaudo, C Pananakakis, G Guillaumot, B
Citation: B. De Salvo et al., Investigation of low field and high temperature SiO2 and ONO leakage currents using the floating gate technique, J NON-CRYST, 245, 1999, pp. 104-109
Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm)
Authors: Kamoulakos, G Kelaidis, C Papadas, C Vincent, E Bruyere, S Ghibaudo, G Pananakakis, G Mortini, P Ghidini, G
Citation: G. Kamoulakos et al., Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm), J APPL PHYS, 86(9), 1999, pp. 5131-5140
Charge transport in thin interpoly nitride/oxide stacked films
Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G
Citation: B. De Salvo et al., Charge transport in thin interpoly nitride/oxide stacked films, J APPL PHYS, 86(5), 1999, pp. 2751-2758
Risultati: 1-25 | 26-27