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Results:
1-23
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Results: 23
Authors:
RAO EVK
GOTTESMAN Y
ALLOVON M
VERGNOL E
SIGOGNE D
TALNEAU A
SIK H
SLEMPKES S
THEYS B
CHEVALLIER J
Citation: Evk. Rao et al., A SIGNIFICANT REDUCTION OF PROPAGATION LOSSES IN INGAASP-INP BURIED-STRIPE WAVE-GUIDES BY HYDROGENATION, IEEE photonics technology letters, 10(3), 1998, pp. 370-372
Authors:
RAO EVK
THEYS B
BENCHIMOL JL
CHEVALLIER J
Citation: Evk. Rao et al., PHOTOLUMINESCENCE OF AS-GROWN AND HYDROGENATED CARBON-DOPED INDIUM-PHOSPHIDE, Semiconductor science and technology, 13(6), 1998, pp. 641-644
Authors:
ALEXANDRE F
PARILLAUD O
NGUYEN DC
AZOULAY R
QUILLEC M
BOUCHOULE S
LEMESTREALLAN G
JUHEL M
LEROUX G
RAO EVK
Citation: F. Alexandre et al., LOW-TEMPERATURE PLANAR REGROWTH OF SEMIINSULATING INP BY LOW-PRESSUREHYDRIDE VAPOR-PHASE EPITAXY FOR DEVICE APPLICATION, Journal of crystal growth, 187(3-4), 1998, pp. 347-354
Authors:
THEYS B
BENCHIMOL JL
RAO EVK
CHEVALLIER J
JUHEL M
Citation: B. Theys et al., EVIDENCE OF HYDROGEN-CARBON INTERACTIONS IN PLASMA HYDROGENATED CARBON-DOPED N-INP, Applied physics letters, 72(20), 1998, pp. 2568-2570
Authors:
RAO EVK
OUGAZZADEN A
LEBELLEGO Y
JUHEL M
Citation: Evk. Rao et al., OPTICAL-PROPERTIES OF LOW-BAND-GAP GAAS(1-X)N-X LAYERS - INFLUENCE OFPOSTGROWTH TREATMENTS, Applied physics letters, 72(12), 1998, pp. 1409-1411
Authors:
ZIMMERMANN G
OUGAZZADEN A
GLOUKHIAN A
RAO EVK
DELPRAT D
RAMDANE A
MIRCEA A
Citation: G. Zimmermann et al., THE ROLE OF N-2 AND H-2 AS CARRIER GAS ON THE SELECTIVE-AREA MOVPE OFINP-BASED HETEROSTRUCTURES USING TBAS AND TBP AS GROUP-V SOURCES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 37-40
Authors:
RAO EVK
ALLOVON M
RAFLE Y
JUHEL M
THIBIERGE H
THEYS B
CHEVALLIER J
Citation: Evk. Rao et al., EVALUATION OF THE PROPERTIES OF HYDROGENATED INP INGAASP DOUBLE-HETEROSTRUCTURE WAVE-GUIDES/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 117-120
Authors:
ZIMMERMANN G
OUGAZZADEN A
GLOUKHIAN A
RAO EVK
DELPRAT D
RAMDANE A
MIRCEA A
Citation: G. Zimmermann et al., SELECTIVE-AREA MOVPE GROWTH OF INP, INGAAS AND INGAASP USING TBAS ANDTBP AT DIFFERENT GROWTH-CONDITIONS, Journal of crystal growth, 170(1-4), 1997, pp. 645-649
Authors:
KOHL A
HARMAND JC
OUDAR JL
RAO EVK
KUSZELEWICZ R
DELPON EL
Citation: A. Kohl et al., ALGAASSB ALASSB MICROCAVITY DESIGNED FOR 1.55-MU-M AND GROWN BY MOLECULAR-BEAM EPITAXY/, Electronics Letters, 33(8), 1997, pp. 708-710
Authors:
ALLOVON M
TALNEAU A
RAO EVK
HUET F
ALEXANDRE F
OUGAZZADEN A
SLEMPKES S
Citation: M. Allovon et al., LOW-LOSS HYDROGENATED BURIED WAVE-GUIDE COUPLER INTEGRATED WITH A 4-WAVELENGTH DISTRIBUTIVE BRAGG REFLECTOR LASER ARRAY ON INP, Applied physics letters, 71(13), 1997, pp. 1750-1752
Authors:
OUGAZZADEN A
LEBELLEGO Y
RAO EVK
JUHEL M
LEPRINCE L
PATRIARCHE G
Citation: A. Ougazzaden et al., METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH OF GAASN ON GAAS USING DIMETHYLHYDRAZINE AND TERTIARYBUTYLARSINE, Applied physics letters, 70(21), 1997, pp. 2861-2863
Authors:
OUGAZZADEN A
DEVAUX F
RAO EVK
SILVESTRE L
PATRIARCHE G
Citation: A. Ougazzaden et al., 1.3 MU-M STRAIN-COMPENSATED INASP INGAP ELECTROABSORPTION MODULATOR STRUCTURE GROWN BY ATMOSPHERIC-PRESSURE METAL-ORGANIC VAPOR EPITAXY/, Applied physics letters, 70(1), 1997, pp. 96-98
Authors:
CHUSSEAU L
MARTIN P
BRASSEUR C
ALIBERT C
HERVE P
ARGUEL P
LOZESDUPUY F
RAO EVK
Citation: L. Chusseau et al., CARRIER-INDUCED CHANGE DUE TO DOPING IN REFRACTIVE-INDEX OF INP - MEASUREMENTS AT 1.3 AND 1.5 MU-M, Applied physics letters, 69(20), 1996, pp. 3054-3056
Authors:
PAUTET C
ABRAHAM P
DAZORD J
FAVRE R
CAUWET F
MONTEIL Y
BOUIX J
OUGAZZADEN A
RAO EVK
MIRCEA A
Citation: C. Pautet et al., TRIMETHYLARSENIC AS AN ALTERNATIVE TO ARSINE IN THE METALORGANIC VAPOR-PHASE EPITAXY OF DEVICE-QUALITY IN0.53GA0.47AS INP/, Applied physics letters, 69(2), 1996, pp. 209-211
Authors:
RAMDANE A
KRAUZ P
RAO EVK
HAMOUDI A
OUGAZZADEN A
ROBEIN D
GLOUKHIAN A
CARRE M
Citation: A. Ramdane et al., MONOLITHIC INTEGRATION OF INGAASP-INP STRAINED-LAYER DISTRIBUTED-FEEDBACK LASER AND EXTERNAL MODULATOR BY SELECTIVE QUANTUM-WELL INTERDIFFUSION, IEEE photonics technology letters, 7(9), 1995, pp. 1016-1018
Authors:
HAMOUDI A
RAO EVK
KRAUZ P
RAMDANE A
OUGAZZADEN A
ROBEIN D
THIBIERGE H
Citation: A. Hamoudi et al., CONTROLLED DISORDERING OF COMPRESSIVELY STRAINED INGAASP MULTIPLE-QUANTUM WELLS UNDER SIO-P ENCAPSULANT AND APPLICATION TO LASER-MODULATOR INTEGRATION, Journal of applied physics, 78(9), 1995, pp. 5638-5641
Authors:
OUGAZZADEN A
SIGOGNE D
MIRCEA A
RAO EVK
RAMDANE A
SILVESTRE L
Citation: A. Ougazzaden et al., ATMOSPHERIC-PRESSURE MOVPE GROWTH OF HIGH-PERFORMANCE POLARIZATION-INSENSITIVE STRAIN COMPENSATED MQW INGAASP INGAAS OPTICAL AMPLIFIER/, Electronics Letters, 31(15), 1995, pp. 1242-1244
Authors:
HAMOUDI A
OUGAZZADEN A
KRAUZ P
RAO EVK
JUHEL M
THIBIERGE H
Citation: A. Hamoudi et al., CATION INTERDIFFUSION IN INGAASP INGAASP MULTIPLE-QUANTUM WELLS WITH CONSTANT P/AS RATIO/, Applied physics letters, 66(6), 1995, pp. 718-720
Authors:
RAO EVK
HAMOUDI A
KRAUZ P
JUHEL M
THIBIERGE H
Citation: Evk. Rao et al., NEW ENCAPSULANT SOURCE FOR III-V QUANTUM-WELL DISORDERING, Applied physics letters, 66(4), 1995, pp. 472-474
Authors:
ABRAM I
LUNG S
KUSZELEWICZ R
LEROUX G
LICOPPE C
OUDAR JL
RAO EVK
BLOCH JI
PLANEL R
THIERRYMIEG V
Citation: I. Abram et al., NONGUIDING HALF-WAVE SEMICONDUCTOR MICROCAVITIES DISPLAYING THE EXCITON-PHOTON MODE SPLITTING, Applied physics letters, 65(20), 1994, pp. 2516-2518
Authors:
RAO EVK
KRAUZ P
THIBIERGE H
AZOULAY R
VIEU C
Citation: Evk. Rao et al., ANOMALOUS DIFFUSION OF ISOELECTRONIC ANTIMONY IMPLANT INDUCED DEFECTSIN GAAS-ALGAAS MULTIQUANTUM-WELL STRUCTURES, Applied physics letters, 64(12), 1994, pp. 1552-1554
Authors:
SEIDEL W
LUGAGNEDELPON E
VOISIN P
RAO EVK
KRAUZ P
ALEXANDRE F
Citation: W. Seidel et al., OPTICAL PROBING OF INTERMIXING IN GAAS-ALGAAS MULTIQUANTUM WELLS, Journal of applied physics, 74(4), 1993, pp. 2968-2970
Authors:
RAO EVK
JUHEL M
KRAUZ P
GAO Y
THIBIERGE H
Citation: Evk. Rao et al., LONG-RANGE DISORDERING OF GAAS-ALGAAS MULTIQUANTUM WELLS BY ISOELECTRONIC ANTIMONY IMPLANTS, Applied physics letters, 62(17), 1993, pp. 2096-2098
Risultati:
1-23
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