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Results: 1-25 | 26-30
Results: 1-25/30
ELECTROCONDUCTIVITY OF CESIUM PYROPHOSPHATE MODIFIED WITH BIVALENT-CATIONS
Authors: SMIRNOV NB BURMAKIN EI KOROVENKOVA ES VOVKOTRUB EG SHEKHTMAN GS
Citation: Nb. Smirnov et al., ELECTROCONDUCTIVITY OF CESIUM PYROPHOSPHATE MODIFIED WITH BIVALENT-CATIONS, Russian journal of electrochemistry, 34(8), 1998, pp. 811-814
SEM STUDIES OF NONUNIFORMITIES AND DEFECT S IN GAN AND ALGAN EPITAXIAL-FILMS
Authors: GOVORKOV AV POLYAKOV AY SMIRNOV NB REDWING JM SKOWRONSKI M SHIN M
Citation: Av. Govorkov et al., SEM STUDIES OF NONUNIFORMITIES AND DEFECT S IN GAN AND ALGAN EPITAXIAL-FILMS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 62(3), 1998, pp. 471-476
DEEP TRAPS IN HIGH-RESISTIVITY ALGAN FILMS
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV REDWING JM
Citation: Ay. Polyakov et al., DEEP TRAPS IN HIGH-RESISTIVITY ALGAN FILMS, Solid-state electronics, 42(5), 1998, pp. 831-838
PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN, Solid-state electronics, 42(4), 1998, pp. 627-635
SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY GOVORKOV AV SMIRNOV NB MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(4), 1998, pp. 637-646
STUDIES OF THE ORIGIN OF THE YELLOW LUMINESCENCE BAND, THE NATURE OF NONRADIATIVE RECOMBINATION AND THE ORIGIN OF PERSISTENT PHOTOCONDUCTIVITY IN N-GAN FILMS
Authors: POLYAKOV AY SMIRNOV NB USIKOV AS GOVORKOV AV PUSHNIY BV
Citation: Ay. Polyakov et al., STUDIES OF THE ORIGIN OF THE YELLOW LUMINESCENCE BAND, THE NATURE OF NONRADIATIVE RECOMBINATION AND THE ORIGIN OF PERSISTENT PHOTOCONDUCTIVITY IN N-GAN FILMS, Solid-state electronics, 42(11), 1998, pp. 1959-1967
DEEP CENTERS AND THEIR SPATIAL-DISTRIBUTION IN UNDOPED GAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., DEEP CENTERS AND THEIR SPATIAL-DISTRIBUTION IN UNDOPED GAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 84(2), 1998, pp. 870-876
CO-CATION CONDUCTIVITY OF SOLID-SOLUTIONS WITH THE GAMMA-KFEO2, STRUCTURE AS A FUNCTION OF AN EXCESS OF ALKALI-METAL OXIDES
Authors: SMIRNOV NB BURMAKIN EI SHEKHTMAN GS
Citation: Nb. Smirnov et al., CO-CATION CONDUCTIVITY OF SOLID-SOLUTIONS WITH THE GAMMA-KFEO2, STRUCTURE AS A FUNCTION OF AN EXCESS OF ALKALI-METAL OXIDES, Russian journal of electrochemistry, 33(12), 1997, pp. 1357-1361
CO-CATION CONDUCTIVITY IN SOLID ELECTROLYTES BASED ON AFEO(2) (A=K, RB, CS)
Authors: SMIRNOV NB BURMAKIN EI SHEKHTMAN GS
Citation: Nb. Smirnov et al., CO-CATION CONDUCTIVITY IN SOLID ELECTROLYTES BASED ON AFEO(2) (A=K, RB, CS), Russian journal of electrochemistry, 32(5), 1996, pp. 514-517
CATIONIC CONDUCTIVITY OF SOLID ELECTROLYTES (K, RB, CS)MO(2)-TIO2 (M=GA, FE)
Authors: SMIRNOV NB BURMAKIN EI ESINA NO SHEKHTMAN GS
Citation: Nb. Smirnov et al., CATIONIC CONDUCTIVITY OF SOLID ELECTROLYTES (K, RB, CS)MO(2)-TIO2 (M=GA, FE), Russian journal of electrochemistry, 32(4), 1996, pp. 496-498
TRANSPORT NUMBERS FOR ALKALI-METAL IONS IN SOLID ELECTROLYTES OF A(1-X)A(X)'MO(2)CENTER-DOT-EO(2) SYSTEMS
Authors: SMIRNOV NB BURMAKIN EI SHEKHTMAN GS
Citation: Nb. Smirnov et al., TRANSPORT NUMBERS FOR ALKALI-METAL IONS IN SOLID ELECTROLYTES OF A(1-X)A(X)'MO(2)CENTER-DOT-EO(2) SYSTEMS, Russian journal of electrochemistry, 32(4), 1996, pp. 499-501
THE INFLUENCE OF THE SIZE FACTOR ON THE POLYALKALI EFFECT IN SOLID ELECTROLYTES WITH THE GAMMA-KFEO2 STRUCTURE
Authors: SMIRNOV NB BURMAKIN EI ESINA NO SHEKHTMAN GS
Citation: Nb. Smirnov et al., THE INFLUENCE OF THE SIZE FACTOR ON THE POLYALKALI EFFECT IN SOLID ELECTROLYTES WITH THE GAMMA-KFEO2 STRUCTURE, Russian journal of electrochemistry, 32(4), 1996, pp. 502-504
PARTIAL IONIC CONDUCTIVITIES OF CO-CATIONIC SOLID ELECTROLYTES WITH THE GAMMA-KFEO2 STRUCTURE
Authors: SMIRNOV NB BURMAKIN EI SHEKHTMAN GS
Citation: Nb. Smirnov et al., PARTIAL IONIC CONDUCTIVITIES OF CO-CATIONIC SOLID ELECTROLYTES WITH THE GAMMA-KFEO2 STRUCTURE, Russian journal of electrochemistry, 32(11), 1996, pp. 1285-1288
CONDUCTION-BAND OFFSETS IN INGAALP INGAP HETEROJUNCTIONS AS MEASURED BY DLTS/
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV CHELNIY AA MILNES AG LI XL LEIFEROV BM ALUEV AN
Citation: Ay. Polyakov et al., CONDUCTION-BAND OFFSETS IN INGAALP INGAP HETEROJUNCTIONS AS MEASURED BY DLTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 39(2), 1996, pp. 79-81
THE INFLUENCE OF OXYGEN IN PHOSPHINE ON ELECTRICAL-PROPERTIES OF UNDOPED INGAALP LAYERS GROWN BY MOCVD
Authors: POLYAKOV AY CHELNIY AA SMIRNOV NB GOVORKOV AV MILNES AG LI XL ALUEV AN ORLOV PB
Citation: Ay. Polyakov et al., THE INFLUENCE OF OXYGEN IN PHOSPHINE ON ELECTRICAL-PROPERTIES OF UNDOPED INGAALP LAYERS GROWN BY MOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 36-40
EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP
Authors: POLYAKOV AY CHELNIY AA GOVORKOV AV SMIRNOV NB MILNES AG PEARTON SJ WILSON RG BALMASHNOV AA ALUEV AN MARKOV AV
Citation: Ay. Polyakov et al., EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP, Solid-state electronics, 38(6), 1995, pp. 1131-1135
THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP
Authors: POLYAKOV AY SMIRNOV NB CHELNIY AA BALMASHNOV AA MILNES AG PEARTON SJ
Citation: Ay. Polyakov et al., THE INFLUENCE OF HYDROGEN PLASMA TREATMENT ON REVERSE CURRENTS IN INGAP AND INGAALP, Solid-state electronics, 38(4), 1995, pp. 771-774
BAND OFFSETS IN HETEROJUNCTIONS OF INGAASSB ALGAASSB/
Authors: POLYAKOV AY MILNES AG GOVORKOV AV DRUZHININA LV TUNITSKAYA IV SMIRNOV NB
Citation: Ay. Polyakov et al., BAND OFFSETS IN HETEROJUNCTIONS OF INGAASSB ALGAASSB/, Solid-state electronics, 38(2), 1995, pp. 525-529
HYDROGEN AND NITROGEN PLASMA TREATMENT EFFECTS ON SURFACE-PROPERTIES OF GASB AND INGAASSB
Authors: POLYAKOV AY MILNES AG LI XL BALMASHNOV AA SMIRNOV NB
Citation: Ay. Polyakov et al., HYDROGEN AND NITROGEN PLASMA TREATMENT EFFECTS ON SURFACE-PROPERTIES OF GASB AND INGAASSB, Solid-state electronics, 38(10), 1995, pp. 1743-1745
ION-IMPLANTATION EFFECTS IN GASB
Authors: MILNES AG LI XL POLYAKOV AY SMIRNOV NB GOVORKOV AV BORODINA OM TUNITSKAYA IV KOZHUKHOVA EA MILVIDSKAYA AG
Citation: Ag. Milnes et al., ION-IMPLANTATION EFFECTS IN GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 129-136
HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB
Authors: POLYAKOV AY TUNITSKAYA IV DRUZHININA LV GOVORKOV AV SMIRNOV NB KOZHUKHOVA EA BORODINA OM MILNES AG LI XL PEARTON SJ BALMASHNOV AA
Citation: Ay. Polyakov et al., HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 137-141
THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS
Authors: MILVIDSKAYA AG POLYAKOV AY KOLCHINA GP MILNES AG GOVORKOV AV SMIRNOV NB TUNITSKAYA IV
Citation: Ag. Milvidskaya et al., THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 279-282
PROPERTIES OF THE CONTACT METAL POROUS SI LICON
Authors: BALAGUROV LA SMIRNOV NB KOZHUKHOVA EA ORLOV AF PETROVA EA POLYKOV AY
Citation: La. Balagurov et al., PROPERTIES OF THE CONTACT METAL POROUS SI LICON, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 58(7), 1994, pp. 78-82
THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY
Authors: DOLGINOV LM TUNITSKAYA IV POLYAKOV AY DRUZHININA LV VINOGRADOVA GV SMIRNOV NB GOVORKOV AV BORODINA OM KOZHUKHOVA EA BALMASHNOV AA MILNES AG
Citation: Lm. Dolginov et al., THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 251(2), 1994, pp. 147-150
PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION
Authors: POLYAKOV AY MILNES AG SMIRNOV NB KOZHUKHOVA EA DRUZHININA LV GOVORKOV AV DOLGINOV LM TUNITSKAYA IV
Citation: Ay. Polyakov et al., PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION, Solid-state electronics, 37(10), 1994, pp. 1691-1694
Risultati: 1-25 | 26-30