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Results:
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Results: 23
Authors:
HEGDE RI
MAITI B
RAI RS
REID KG
TOBIN PJ
Citation: Ri. Hegde et al., SURFACE AND INTERFACE ROUGHNESS OF ULTRATHIN NITRIC-OXIDE OXYNITRIDE GATE DIELECTRIC, Journal of the Electrochemical Society, 145(1), 1998, pp. 13-15
Authors:
HEGDE RI
MAITI B
TOBIN PJ
Citation: Ri. Hegde et al., GROWTH AND FILM CHARACTERISTICS OF N2O AND NO OXYNITRIDE GATE AND TUNNEL DIELECTRICS, Journal of the Electrochemical Society, 144(3), 1997, pp. 1081-1086
Authors:
HEGDE RI
TOBIN PJ
SITARAM AR
KLEIN J
Citation: Ri. Hegde et al., THIN-FILM PROPERTIES OF TUNGSTEN NUCLEATION LAYER IN BLANKET TUNGSTENDEPOSITION, Journal of the Electrochemical Society, 144(3), 1997, pp. 1087-1090
Authors:
HEGDE RI
CHONKO MA
TOBIN PJ
Citation: Ri. Hegde et al., EFFECT OF SILICON SUBSTRATE MICROROUGHNESS ON GATE OXIDE QUALITY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3299-3304
Authors:
IRENE EA
LIU Q
PAULSON WM
TOBIN PJ
HEGDE RI
Citation: Ea. Irene et al., MEASUREMENT OF N IN NITRIDED OXIDES USING SPECTROSCOPIC IMMERSION ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1697-1701
Authors:
MAITI B
TOBIN PJ
OKADA Y
REID KG
AJURIA SA
HEGDE RI
KAUSHIK V
Citation: B. Maiti et al., OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE, IEEE electron device letters, 17(6), 1996, pp. 279-281
Authors:
AJURIA SA
MAITI B
TOBIN PJ
MELE TC
Citation: Sa. Ajuria et al., REEVALUATION OF THE BENEFITS OF POSTOXIDATION ANNEALING ON SUB-100 ANGSTROM GATE BRIDE QUALITY, IEEE electron device letters, 17(6), 1996, pp. 282-284
Authors:
HARTIG MJ
TOBIN PJ
Citation: Mj. Hartig et Pj. Tobin, A MODEL FOR THE GAS-PHASE CHEMISTRY OCCURRING IN A FURNACE N2O OXYNITRIDE PROCESS, Journal of the Electrochemical Society, 143(5), 1996, pp. 1753-1762
Authors:
HEGDE RI
PAULSON WM
TOBIN PJ
Citation: Ri. Hegde et al., SURFACE-TOPOGRAPHY OF PHOSPHORUS-DOPED POLYSILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1434-1441
Authors:
SHUM DP
TSENG HH
PAULSON WM
CHANG KM
TOBIN PJ
Citation: Dp. Shum et al., A HIGHLY ROBUST PROCESS INTEGRATION WITH SCALED ONO INTERPOLY DIELECTRICS FOR EMBEDDED NONVOLATILE MEMORY APPLICATIONS, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1376-1377
Authors:
HEGDE RI
TOBIN PJ
REID KG
MAITI B
AJURIA SA
Citation: Ri. Hegde et al., GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE, Applied physics letters, 66(21), 1995, pp. 2882-2884
Authors:
OKADA Y
TOBIN PJ
Citation: Y. Okada et Pj. Tobin, HOT-CARRIER DEGRADATION OF LDD MOSFETS WITH GATE OXYNITRIDE GROWN IN N2O, IEEE electron device letters, 15(7), 1994, pp. 233-235
Authors:
TOBIN PJ
OKADA Y
AJURIA SA
LAKHOTIA V
FEIL WA
HEDGE RI
Citation: Pj. Tobin et al., FURNACE FORMATION OF SILICON OXYNITRIDE THIN DIELECTRICS IN NITROUS-OXIDE (N2O) - THE ROLE OF NITRIC-OXIDE (NO), Journal of applied physics, 75(3), 1994, pp. 1811-1817
Authors:
OKADA Y
TOBIN PJ
REID KG
HEGDE RI
MAITI B
AJURIA SA
Citation: Y. Okada et al., FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO), I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1608-1613
Authors:
OKADA Y
TOBIN PJ
RUSHBROOK P
DEHART WL
Citation: Y. Okada et al., THE PERFORMANCE AND RELIABILITY OF 0.4 MICRON MOSFETS WITH GATE OXYNITRIDES GROWN BY RAPID THERMAL-PROCESSING USING MIXTURES OF N2O AND O2, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 191-197
Authors:
BHATTACHARYA SS
BANERJEE SK
NGUYEN BY
TOBIN PJ
Citation: Ss. Bhattacharya et al., TEMPERATURE-DEPENDENCE OF THE ANOMALOUS LEAKAGE CURRENT IN POLYSILICON-ON-INSULATOR MOSFETS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 221-227
Authors:
TOBIN PJ
MANI N
JAYASWAL RK
Citation: Pj. Tobin et al., EFFECT OF PHYSIOLOGICAL CONDITIONS ON THE AUTOLYSIS OF STAPHYLOCOCCUS-AUREUS STRAINS, Antonie van Leeuwenhoek, 65(1), 1994, pp. 71-78
Authors:
HEGDE RI
FIORDALICE RW
TRAVIS EO
TOBIN PJ
Citation: Ri. Hegde et al., THIN-FILM PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION TIN BARRIER FOR ULTRA-LARGE-SCALE INTEGRATION APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1287-1296
Authors:
KIM YS
OKADA Y
CHANG KM
TOBIN PJ
MORTON B
CHOE H
BOWERS M
KUO C
CHRUDIMSKY D
AJURIA SA
YEARGAIN JR
Citation: Ys. Kim et al., LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION, IEEE electron device letters, 14(7), 1993, pp. 342-344
Authors:
BALASINSKI A
TSAI MH
VISHNUBHOTLA L
MA TP
TSENG HH
TOBIN PJ
Citation: A. Balasinski et al., INTERFACE PROPERTIES IN FLUORINATED (100) AND (111)SI SIO2 MOSFETS/, Microelectronic engineering, 22(1-4), 1993, pp. 97-100
Authors:
OKADA Y
TOBIN PJ
LAKHOTIA V
AJURIA SA
HEGDE RI
LIAO JC
RUSHBROOK PP
ARIAS LJ
Citation: Y. Okada et al., EVALUATION OF INTERFACIAL NITROGEN CONCENTRATION OF RTP OXYNITRIDES BY REOXIDATION, Journal of the Electrochemical Society, 140(6), 1993, pp. 87-89
Authors:
OKADA Y
TOBIN PJ
LAKHOTIA V
FEIL WA
AJURIA SA
HEGDE RI
Citation: Y. Okada et al., RELATIONSHIP BETWEEN GROWTH-CONDITIONS, NITROGEN PROFILE, AND CHARGE TO BREAKDOWN OF GATE OXYNITRIDES GROWN FROM PURE N2O, Applied physics letters, 63(2), 1993, pp. 194-196
Authors:
HEGDE RI
FIORDALICE RW
TOBIN PJ
Citation: Ri. Hegde et al., TINCL FORMATION DURING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION OF TIN, Applied physics letters, 62(19), 1993, pp. 2326-2328
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1-23
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