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Results:
1-25
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Results: 25
Authors:
TAKAGI S
KOGA J
TORIUMI A
Citation: S. Takagi et al., MOBILITY ENHANCEMENT OF SOI MOSFETS DUE TO SUBBAND MODULATION IN ULTRATHIN SOI FILMS, JPN J A P 1, 37(3B), 1998, pp. 1289-1294
Authors:
TANAMOTO T
TORIUMI A
Citation: T. Tanamoto et A. Toriumi, A PERCOLATION APPROACH TO DIELECTRIC-BREAKDOWN STATISTICS, JPN J A P 1, 36(3B), 1997, pp. 1439-1442
Authors:
OHATA A
TORIUMI A
UCHIDA K
Citation: A. Ohata et al., COULOMB-BLOCKADE EFFECTS IN EDGE QUANTUM-WIRE SOI MOSFETS, JPN J A P 1, 36(3B), 1997, pp. 1686-1689
Authors:
YASUDA N
TAKAGI S
TORIUMI A
Citation: N. Yasuda et al., SPECTRAL SHAPE-ANALYSIS OF INFRARED-ABSORPTION OF THERMALLY GROWN SILICON DIOXIDE FILMS, Applied surface science, 117, 1997, pp. 216-220
Authors:
TORIUMI A
SATAKE H
YASUDA N
TANAMOTO T
Citation: A. Toriumi et al., ELECTRICAL RELIABILITY AND STRUCTURAL INHOMOGENEITY OF THERMALLY GROWN SIO2, Applied surface science, 117, 1997, pp. 230-236
Authors:
TORIUMI A
HERRMANN JM
KAWATA S
Citation: A. Toriumi et al., NONDESTRUCTIVE READOUT OF A 3-DIMENSIONAL PHOTOCHROMIC OPTICAL MEMORYWITH A NEAR-INFRARED DIFFERENTIAL PHASE-CONTRAST MICROSCOPE, Optics letters, 22(8), 1997, pp. 555-557
Authors:
KOGA J
TORIUMI A
Citation: J. Koga et A. Toriumi, NEGATIVE DIFFERENTIAL CONDUCTANCE AT ROOM-TEMPERATURE IN 3-TERMINAL SILICON SURFACE JUNCTION TUNNELING DEVICE, Applied physics letters, 70(16), 1997, pp. 2138-2140
Authors:
KOGA J
TAKAGI S
TORIUMI A
Citation: J. Koga et al., OBSERVATION OF OXIDE-THICKNESS-DEPENDENT INTERFACE ROUGHNESS IN SI MOS STRUCTURE, JPN J A P 1, 35(2B), 1996, pp. 1440-1444
Authors:
TORIUMI A
Citation: A. Toriumi, 0.1-MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTORS AND BEYOND, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4020-4023
Authors:
OHATA A
TORIUMI A
Citation: A. Ohata et A. Toriumi, COULOMB-BLOCKADE EFFECTS IN EDGE QUANTUM-WIRE SOI-MOSFETS, IEICE transactions on electronics, E79C(11), 1996, pp. 1586-1589
Authors:
SATAKE H
YASUDA N
TAKAGI S
TORIUMI A
Citation: H. Satake et al., CORRELATION BETWEEN 2 DIELECTRIC-BREAKDOWN MECHANISMS IN ULTRA-THIN GATE OXIDES, Applied physics letters, 69(8), 1996, pp. 1128-1130
Authors:
KOGA J
TORIUMI A
Citation: J. Koga et A. Toriumi, NEGATIVE DIFFERENTIAL CONDUCTANCE IN 3-TERMINAL SILICON TUNNELING DEVICE, Applied physics letters, 69(10), 1996, pp. 1435-1437
Authors:
OHATA A
NIIYAMA H
SHIBATA T
NAKAJIMA K
TORIUMI A
Citation: A. Ohata et al., SILICON-BASED SINGLE-ELECTRON-TUNNELING TRANSISTOR OPERATED AT 4.2-K, JPN J A P 1, 34(8B), 1995, pp. 4485-4487
Authors:
MIZUNO T
TORIUMI A
Citation: T. Mizuno et A. Toriumi, EXPERIMENTAL-EVIDENCE FOR STATISTICAL-INHOMOGENEOUS DISTRIBUTED DOPANT ATOMS IN A SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, Journal of applied physics, 77(7), 1995, pp. 3538-3540
Authors:
TAKAGI S
TORIUMI A
Citation: S. Takagi et A. Toriumi, QUANTITATIVE UNDERSTANDING OF INVERSION-LAYER CAPACITANCE IN SI MOSFETS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2125-2130
Authors:
SATAKE H
TORIUMI A
Citation: H. Satake et A. Toriumi, COMMON ORIGIN FOR STRESS-INDUCED LEAKAGE CURRENT AND ELECTRON TRAP GENERATION IN SIO2, Applied physics letters, 67(23), 1995, pp. 3489-3490
Authors:
SATAKE H
TORIUMI A
Citation: H. Satake et A. Toriumi, TEMPERATURE-DEPENDENT HOLE FLUENCE TO BREAKDOWN IN THIN GATE OXIDES UNDER FOWLER-NORDHEIM ELECTRON-TUNNELING INJECTION, Applied physics letters, 66(25), 1995, pp. 3516-3517
Authors:
KOGA J
TAKAHASHI M
NIIYAMA H
IWASE M
FUJISAKI M
TORIUMI A
Citation: J. Koga et al., 0.25 MU-M GATE LENGTH CMOS DEVICES FOR CRYOGENIC OPERATION, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1179-1183
Authors:
TAKAGI S
TORIUMI A
IWASE M
TANGO H
Citation: S. Takagi et al., ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2357-2362
Authors:
TAKAGI S
TORIUMI A
IWASE M
TANGO H
Citation: S. Takagi et al., ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .2. EFFECTS OF SURFACE ORIENTATION, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2363-2368
Authors:
INABA S
MIZUNO T
IWASE M
TAKAHASHI M
NIIYAMA H
HAZAMA H
YOSHIMI M
TORIUMI A
Citation: S. Inaba et al., INVERTER PERFORMANCE OF 0.10 MU-M CMOS OPERATING AT ROOM-TEMPERATURE, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2399-2404
Authors:
OHATA A
TORIUMI A
KOGA J
Citation: A. Ohata et al., A STUDY OF QUANTUM INTERFERENCE FLUCTUATIONS IN DEEP SUB-MU-M MOSFETSUNDER CRYOGENIC CONDITIONS, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2107-2111
Authors:
MIZUNO T
OKAMURA J
TORIUMI A
Citation: T. Mizuno et al., EXPERIMENTAL-STUDY OF THRESHOLD VOLTAGE FLUCTUATION DUE TO STATISTICAL VARIATION OF CHANNEL DOPANT NUMBER IN MOSFETS, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2216-2221
Authors:
PATEL NK
TORIUMI A
Citation: Nk. Patel et A. Toriumi, STRESS-INDUCED LEAKAGE CURRENT IN ULTRATHIN SIO2-FILMS, Applied physics letters, 64(14), 1994, pp. 1809-1811
Authors:
TAKAGI S
TORIUMI A
Citation: S. Takagi et A. Toriumi, OBSERVATION OF ANISOTROPIC IMPACT IONIZATION IN SI MOSFETS, Semiconductor science and technology, 7(3B), 1992, pp. 601-603
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