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Results: 1-25/30
Authors:
METZGER RM
CHEN B
VUILLAUME D
LAKSHMIKANTHAM MV
HOPFNER U
KAWAI T
BALDWIN JW
WU X
TACHIBANA H
SAKURAI H
CAVA MP
Citation: Rm. Metzger et al., OBSERVATION OF UNIMOLECULAR ELECTRICAL RECTIFICATION IN HEXADECYLQUINOLINIUM TRICYANOQUINODIMETHANIDE, Thin solid films, 329, 1998, pp. 326-330
Authors:
GOGUENHEIM D
BRAVAIX A
VUILLAUME D
VARROT M
REVIL N
MORTINI P
Citation: D. Goguenheim et al., HOT-CARRIER RELIABILITY IN N-MOSFETS USED AS PASS-TRANSISTORS, Microelectronics and reliability, 38(4), 1998, pp. 539-544
Authors:
AURIEL G
OUALID J
VUILLAUME D
Citation: G. Auriel et al., ELECTRON TRAPS CREATED IN GATE OXIDES BY FOWLER-NORDHEIM INJECTIONS, Microelectronics and reliability, 38(2), 1998, pp. 227-231
Authors:
VUILLAUME D
BRAVAIX A
GOGUENHEIM D
Citation: D. Vuillaume et al., HOT-CARRIER INJECTIONS IN SIO2, Microelectronics and reliability, 38(1), 1998, pp. 7-22
Authors:
COLLETT J
VUILLAUME D
Citation: J. Collett et D. Vuillaume, NANO-FIELD EFFECT TRANSISTOR WITH AN ORGANIC SELF-ASSEMBLED MONOLAYERAS GATE INSULATOR, Applied physics letters, 73(18), 1998, pp. 2681-2683
Authors:
COLLET J
BONNIER M
BOULOUSSA O
RONDELEZ F
VUILLAUME D
Citation: J. Collet et al., ELECTRICAL-PROPERTIES OF END-GROUP FUNCTIONALIZED SELF-ASSEMBLED MONOLAYERS, Microelectronic engineering, 36(1-4), 1997, pp. 119-122
Authors:
GOGUENHEIM D
BRAVAIX A
VUILLAUME D
MONDON F
CANDELIER P
JOURDAIN M
MEINERTZHAGEN A
Citation: D. Goguenheim et al., A COUPLED I(V) AND CHARGE-PUMPING ANALYSIS OF STRESS-INDUCED LEAKAGE CURRENTS IN 5NM-THICK GATE OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 141-144
Authors:
BRAVAIX A
GOGUENHEIM D
VUILLAUME D
REVIL N
VARROT M
MORTINI P
Citation: A. Bravaix et al., INFLUENCES OF THE DIFFERENT DEGRADATION MECHANISMS IN AC-STRESSED P-MOSFETS DURING PASS TRANSISTOR OPERATION, Microelectronic engineering, 36(1-4), 1997, pp. 305-308
Authors:
AURIEL G
DUBUC JP
SAGNES B
OUALID J
VUILLAUME D
Citation: G. Auriel et al., NEW INSIGHTS ON THE CHARGING AND DISCHARGING OF ELECTRON TRAPS CREATED BY HOMOGENEOUS ELECTRON INJECTION IN GATE OXIDE, Microelectronic engineering, 36(1-4), 1997, pp. 309-312
Authors:
ELHDIY A
SALACE G
JOURDAIN M
MEINERTZHAGEN A
VUILLAUME D
Citation: A. Elhdiy et al., STRESS-FIELD POLARITY EFFECT ON DEFECTS GENERATION IN THIN SILICON DIOXIDE FILMS, Thin solid films, 296(1-2), 1997, pp. 106-109
Authors:
BRAVAIX A
VUILLAUME D
Citation: A. Bravaix et D. Vuillaume, ANALYSIS OF THE HOT-CARRIER DEGRADATION OF DEEP-SUBMICROMETER LARGE-ANGLE-TILT-IMPLANTED DRAIN (LATID) MOSFETS, Solid-state electronics, 41(9), 1997, pp. 1293-1301
Authors:
METZGER RM
CHEN B
HOPFNER U
LAKSHMIKANTHAM MV
VUILLAUME D
KAWAI T
WU XL
TACHIBANA H
HUGHES TV
SAKURAI H
BALDWIN JW
HOSCH C
CAVA MP
BREHMER L
ASHWELL GJ
Citation: Rm. Metzger et al., UNIMOLECULAR ELECTRICAL RECTIFICATION IN HEXADECYLQUINOLINIUM TRICYANOQUINODIMETHANIDE, Journal of the American Chemical Society, 119(43), 1997, pp. 10455-10466
Authors:
BOULAS C
DAVIDOVITS JV
RONDELEZ F
VUILLAUME D
Citation: C. Boulas et al., SUPPRESSION OF CHARGE-CARRIER TUNNELING THROUGH ORGANIC SELF-ASSEMBLED MONOLAYERS, Physical review letters, 76(25), 1996, pp. 4797-4800
Authors:
SAGNES B
MORAGUES JM
YCKACHE K
JERISIAN R
OUALID J
VUILLAUME D
Citation: B. Sagnes et al., RELAXATION OF THE SPACE-CHARGE CREATED BY FOWLER-NORDHEIM INJECTIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 80(9), 1996, pp. 5469-5477
Authors:
DMOWSKI K
VUILLAUME D
LEPLEY B
Citation: K. Dmowski et al., A MODIFIED METHOD OF SIDE DATA-ANALYSIS OF DEEP-LEVEL TRANSIENT SPECTROSCOPY SPECTRA, Journal of applied physics, 79(3), 1996, pp. 1468-1475
Authors:
VUILLAUME D
BRAVAIX A
GOGUENHEIM D
MARCHETAUX JC
BOUDOU A
Citation: D. Vuillaume et al., HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1473-1474
Authors:
VUILLAUME D
BOULAS C
COLLET J
DAVIDOVITS JV
RONDELEZ F
Citation: D. Vuillaume et al., ORGANIC INSULATING FILMS OF NANOMETER THICKNESSES, Applied physics letters, 69(11), 1996, pp. 1646-1648
Authors:
BOULAS C
DAVIDOVITS JV
RONDELEZ F
VUILLAUME D
Citation: C. Boulas et al., ULTRA-LOW CONDUCTIVITY THROUGH INSULATING SELF-ASSEMBLED ORGANIC MONOLAYERS, Microelectronic engineering, 28(1-4), 1995, pp. 217-220
Authors:
BRAVAIX A
VUILLAUME D
GOGUENHEIM D
DORVAL D
HAOND M
Citation: A. Bravaix et al., IMPROVED HOT-CARRIER IMMUNITY OF P-MOSFETS WITH 8NM THICK NITRIDED GATE-OXIDE DURING BIDIRECTIONAL STRESSING, Microelectronic engineering, 28(1-4), 1995, pp. 273-276
Authors:
MORAGUES JM
SAGNES B
YCKACHE K
JERISIAN R
OUALID J
VUILLAUME D
Citation: Jm. Moragues et al., EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS, Microelectronic engineering, 28(1-4), 1995, pp. 329-332
Authors:
DMOWSKI K
VUILLAUME D
LEPLEY B
LOSSON E
BATH A
Citation: K. Dmowski et al., INTERFACE STATE MEASUREMENTS BY THE DLS-82E LOCK-IN SPECTROMETER, Review of scientific instruments, 66(8), 1995, pp. 4283-4288
Authors:
BRAVAIX A
VUILLAUME D
THIRION V
DORVAL D
STRABONI A
Citation: A. Bravaix et al., DAMAGE-INDUCED BY CARRIER INJECTION IN 8 NM THICK OXIDES AND NITRIDEDOXIDES, Journal of non-crystalline solids, 187, 1995, pp. 365-368
Authors:
BRAVAIX A
VUILLAUME D
Citation: A. Bravaix et D. Vuillaume, LIFETIME PREDICTION METHODS FOR P-MOSFETS - A COMPARATIVE-STUDY OF STANDARD AND CHARGE-PUMPING LIFETIME CRITERIA, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 101-108
Authors:
CADET C
DERESMES D
VUILLAUME D
STIEVENARD D
Citation: C. Cadet et al., INFLUENCE OF SURFACE-DEFECTS ON THE ELECTRICAL BEHAVIOR OF ALUMINUM-POROUS SILICON JUNCTIONS, Applied physics letters, 64(21), 1994, pp. 2827-2829
Authors:
VUILLAUME D
DERESMES D
STIEVENARD D
Citation: D. Vuillaume et al., TEMPERATURE-DEPENDENT STUDY OF SPIN-DEPENDENT RECOMBINATION AT SILICON DANGLING BONDS, Applied physics letters, 64(13), 1994, pp. 1690-1692