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Results: 1-25/27
Authors:
WU NJ
SHIBATA N
AMEMIYA Y
Citation: Nj. Wu et al., QUANTUM CELLULAR-AUTOMATON DEVICE USING THE IMAGE CHARGE EFFECT, JPN J A P 1, 37(5A), 1998, pp. 2433-2438
Authors:
WU NJ
IGNATIEV A
XU YQ
CHEN YS
Citation: Nj. Wu et al., (MN,SB) DOPED-PB (ZR,TI)O3 YBA2CU3O7 HETEROSTRUCTURE INFRARED DETECTORS/, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 1009-1020
Authors:
ZHUANG WW
WU NJ
RITUMS D
IGNATIEV A
Citation: Ww. Zhuang et al., THE INTEGRATION OF BA0.5SR0.5TIO3 WITH SILICON BY THE USE OF METALLICBUFFERS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 167-172
Authors:
WU NJ
CHEN YS
FAN JY
IGNATIEV A
Citation: Nj. Wu et al., INFRARED PHOTORESPONSE OF (MN,SB) DOPED PB(ZR,TI)O-3 YBA2CU3O7 HETEROSTRUCTURE DETECTORS/, Journal of applied physics, 83(9), 1998, pp. 4980-4984
Authors:
WU NJ
SHIBATA N
AMEMIYA Y
Citation: Nj. Wu et al., BOLTZMANN MACHINE NEURON DEVICE USING QUANTUM-COUPLED SINGLE ELECTRONS, Applied physics letters, 72(24), 1998, pp. 3214-3216
Authors:
WU NJ
ASAHI N
AMEMIYA Y
Citation: Nj. Wu et al., CELLULAR-AUTOMATON CIRCUITS USING SINGLE-ELECTRON-TUNNELING JUNCTIONS, JPN J A P 1, 36(5A), 1997, pp. 2621-2627
Authors:
LIU SQ
CHEN YS
WU NJ
IGNATIEV A
Citation: Sq. Liu et al., REALIZATION OF A POLARIZER EMPLOYING THE COMBINED EFFECTS OF BIREFRINGENCE AND DIFFRACTION, Optics letters, 22(19), 1997, pp. 1518-1520
Authors:
UNO S
HASHIZUME T
KASAI S
WU NJ
HASEGAWA H
Citation: S. Uno et al., 0.86 EV PLATINUM SCHOTTKY-BARRIER ON INDIUM-PHOSPHIDE BY IN-SITU ELECTROCHEMICAL PROCESS AND ITS APPLICATION TO MESFETS, JPN J A P 1, 35(2B), 1996, pp. 1258-1263
Authors:
LIN H
ZOMORRODIAN AR
WU NJ
HUANG TQ
LIU D
IGNATIEV A
Citation: H. Lin et al., PYROELECTRIC CURRENT METHOD FOR MEASURING FERROELECTRIC MEMORY CELL RETENTION AT HIGH-TEMPERATURES, Integrated ferroelectrics, 12(1), 1996, pp. 47-52
Authors:
LIN H
WU NJ
GEIGER F
XIE K
IGNATIEV A
Citation: H. Lin et al., A FERROELECTRIC-SUPERCONDUCTING PHOTODETECTOR, Journal of applied physics, 80(12), 1996, pp. 7130-7133
Authors:
ZOMORRODIAN AR
LIN H
WU NJ
HUANG TQ
LIU D
IGNATIEV A
Citation: Ar. Zomorrodian et al., HIGH-TEMPERATURE POLARIZATION RETENTION OF A PB(ZR0.52TI0.48)O-3 YBA2CU3O7-X MEMORY CELL/, Applied physics letters, 69(12), 1996, pp. 1789-1791
Authors:
HASHIZUME T
OKADA H
WU NJ
HASEGAWA H
Citation: T. Hashizume et al., DEPLETION CHARACTERISTICS OF DIRECT SCHOTTKY CONTACTS TO QUANTUM-WELLS FORMED BY IN-SITU SELECTIVE ELECTROCHEMICAL PROCESS, JPN J A P 1, 34(2B), 1995, pp. 1149-1152
Authors:
WU NJ
HASHIZUME T
HASEGAWA H
AMEMIYA Y
Citation: Nj. Wu et al., SCHOTTKY CONTACTS ON N-INP WITH HIGH BARRIER HEIGHTS AND REDUCED FERMI-LEVEL PINNING BY A NOVEL IN-SITU ELECTROCHEMICAL PROCESS, JPN J A P 1, 34(2B), 1995, pp. 1162-1167
Authors:
OKADA H
JINUSHI K
WU NJ
HASHIZUME T
HASEGAWA H
Citation: H. Okada et al., NOVEL WIRE TRANSISTOR STRUCTURE WITH INPLANE GATE USING DIRECT SCHOTTKY CONTACTS TO 2DEG, JPN J A P 1, 34(2B), 1995, pp. 1315-1319
Authors:
IGNATIEV A
WU NJ
LIN H
HUANG TQ
ENDICTER S
LI XY
LIU D
Citation: A. Ignatiev et al., NONVOLATILE FERROELECTRIC SUPERCONDUCTING FIELD-EFFECT TRANSISTOR, Integrated ferroelectrics, 10(1-4), 1995, pp. 327-334
Authors:
LI XY
WU NJ
XIE K
LIU JS
LIN H
HUANG TQ
IGNATIEV A
Citation: Xy. Li et al., THE EFFECT OF YBA2CU3O7-X TARGET PROPERTIES ON THE SUPERCONDUCTING CHARACTERISTICS OF LASER-ABLATION DEPOSITED THIN-FILMS, Physica. C, Superconductivity, 248(3-4), 1995, pp. 281-289
Authors:
WU NJ
LI XY
LI J
LIN H
FREDRICKSEN H
XIE K
MESARWI A
IGNATIEV A
SHIH HD
Citation: Nj. Wu et al., THIN-FILM DEPOSITION AND INTERFACE CHARACTERIZATION OF YBCO ON LINBO3SUBSTRATES, Journal of materials research, 10(12), 1995, pp. 3009-3015
Authors:
ZOMORRODIAN A
MESARWI A
WU NJ
IGNATIEV A
Citation: A. Zomorrodian et al., XPS OXYGEN LINE BROADENING IN LEAD ZIRCONIUM TITANATE AND RELATED MATERIALS, Applied surface science, 90(3), 1995, pp. 343-348
Authors:
ZOMORRODIAN AR
WU NJ
LIN H
HUANG TQ
LI XY
IGNATIEV A
Citation: Ar. Zomorrodian et al., TEMPERATURE-DEPENDENCE OF INFRARED PHOTOCURRENT IN PB(ZR,TI)O-3 ON YBA2CU3O7-X, Journal of applied physics, 78(7), 1995, pp. 4780-4783
Authors:
LIN H
WU NJ
GEIGER F
XIE K
IGNATIEV A
Citation: H. Lin et al., PHOTORESPONSE AND FAST OPTICAL READOUT FOR A PBZRXTI1-XO3 YBA2CU3O7-XTHIN-FILM HETEROSTRUCTURE CAPACITOR/, Applied physics letters, 66(10), 1995, pp. 1172-1174
Authors:
WU NJ
HASHIZUME T
HASEGAWA H
Citation: Nj. Wu et al., FORMATION OF OXIDE-FREE NEARLY IDEAL PT GAAS SCHOTTKY BARRIERS BY NOVEL IN-SITU PHOTOPULSE-ASSISTED ELECTROCHEMICAL PROCESS/, JPN J A P 1, 33(1B), 1994, pp. 936-941
Authors:
HASHIZUME T
SCHWEEGER G
WU NJ
HASEGAWA H
Citation: T. Hashizume et al., NOVEL IN-SITU ELECTROCHEMICAL TECHNOLOGY FOR FORMATION OF OXIDE-FREE AND DEFECT-FREE SCHOTTKY CONTACT TO GAAS AND RELATED LOW-DIMENSIONAL STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2660-2666
Authors:
WU NJ
LIN H
XIE K
LI XY
IGNATIEV A
Citation: Nj. Wu et al., A COMPARISON STUDY OF (100) AND (110) BA0.5SR0.5TIO3 EPITAXIAL THIN-FILMS GROWN ON SUPERCONDUCTING YBA2CU3O7 THIN-FILM SUBSTRATES, Physica. C, Superconductivity, 232(1-2), 1994, pp. 151-157
Authors:
LIN H
WU NJ
XIE K
LI XY
IGNATIEV A
Citation: H. Lin et al., TRANSIENT-BEHAVIOR AND MEMORY EFFECT OF A PBZRXTI1-XO3 YBA2CU3O7-X 3-TERMINAL DEVICE/, Applied physics letters, 65(8), 1994, pp. 953-955
Authors:
FREDRICKSEN H
RITUMS D
WU NJ
LI XY
IGNATIEV A
FELLER J
SARMA BK
LEVY M
Citation: H. Fredricksen et al., HIGH TRANSITION-TEMPERATURE SUPERCONDUCTING SURFACE-ACOUSTIC-WAVE DEVICES, Applied physics letters, 64(22), 1994, pp. 3033-3035