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Results: 1-25/39
Authors:
Trajkovic, T
Udrea, F
Waind, PR
Thomson, J
Amaratunga, GAJ
Milne, WI
Citation: T. Trajkovic et al., Optimum design of 1.4kV non-punch-through trench IGBTs: the next generation of high-power switching devices, IEE P-CIRC, 148(2), 2001, pp. 71-74
Authors:
Milne, WI
Teo, KBK
Chhowalla, M
Amaratunga, GAJ
Yuan, J
Robertson, J
Legagneux, P
Pirio, G
Pribat, D
Bouzehouane, K
Bruenger, W
Trautmann, C
Citation: Wi. Milne et al., Carbon films for use as the electron source in a parallel e-beam lithography system, NEW DIAM FR, 11(4), 2001, pp. 235-247
Authors:
Tagliaferro, A
Milne, WI
Robertson, J
Silva, SRP
Amaratunga, GAJ
Citation: A. Tagliaferro et al., Proceedings of the 3rd Specialist Meeting on Amorphous Carbon (SMAC 2000) - Mondovi, Italy, 30 August-1 September 2000 - Preface, DIAM RELAT, 10(2), 2001, pp. V-V
Authors:
Chhowalla, M
Amaratunga, GAJ
Citation: M. Chhowalla et Gaj. Amaratunga, Strongly adhering and thick highly tetrahedral amorphous carbon (ta-C) thin films via surface modification by implantation, J MATER RES, 16(1), 2001, pp. 5-8
Authors:
Huang, S
Amaratunga, GAJ
Udrea, F
Citation: S. Huang et al., A novel single gate MOS controlled current saturated thyristor, IEEE ELEC D, 22(9), 2001, pp. 438-440
Authors:
Garner, DM
Amaratunga, GAJ
Citation: Dm. Garner et Gaj. Amaratunga, Analytic modelling of the thin-film field-emission triode, SOL ST ELEC, 45(6), 2001, pp. 879-886
Authors:
Huang, S
Sheng, K
Udrea, F
Amaratunga, GAJ
Citation: S. Huang et al., A dynamic n-buffer insulated gate bipolar transistor, SOL ST ELEC, 45(1), 2001, pp. 173-182
Authors:
Sano, N
Wang, H
Chhowalla, M
Alexandrou, I
Amaratunga, GAJ
Citation: N. Sano et al., Nanotechnology - Synthesis of carbon 'onions' in water, NATURE, 414(6863), 2001, pp. 506-507
Authors:
Huang, S
Amaratunga, GAJ
Udrea, F
Sheng, K
Waind, P
Coulbeck, L
Taylor, P
Citation: S. Huang et al., A dual-channel IEGT, MICROELEC J, 32(9), 2001, pp. 755-761
Authors:
Akiyama, M
Alexandrou, I
Chhowalla, M
Amaratunga, GAJ
Citation: M. Akiyama et al., Optimizing hardness of CNx thin films by dc magnetron sputtering and a statistical approach, J MATER SCI, 36(22), 2001, pp. 5397-5401
Authors:
Chhowalla, M
Teo, KBK
Ducati, C
Rupesinghe, NL
Amaratunga, GAJ
Ferrari, AC
Roy, D
Robertson, J
Milne, WI
Citation: M. Chhowalla et al., Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition, J APPL PHYS, 90(10), 2001, pp. 5308-5317
Authors:
Brezeanu, G
Badila, M
Tudor, B
Millan, J
Godignon, P
Udrea, F
Amaratunga, GAJ
Mihaila, A
Citation: G. Brezeanu et al., Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage, IEEE DEVICE, 48(9), 2001, pp. 2148-2153
Authors:
Okano, K
Yamada, T
Sawabe, A
Koizumi, S
Itoh, J
Amaratunga, GAJ
Citation: K. Okano et al., Metal-insulator-vacuum type electron emission from N-containing chemical vapor deposited diamond, APPL PHYS L, 79(2), 2001, pp. 275-277
Authors:
Chhowalla, M
Ducati, C
Rupesinghe, NL
Teo, KBK
Amaratunga, GAJ
Citation: M. Chhowalla et al., Field emission from short and stubby vertically aligned carbon nanotubes, APPL PHYS L, 79(13), 2001, pp. 2079-2081
Authors:
Teo, KBK
Chhowalla, M
Amaratunga, GAJ
Milne, WI
Hasko, DG
Pirio, G
Legagneux, P
Wyczisk, F
Pribat, D
Citation: Kbk. Teo et al., Uniform patterned growth of carbon nanotubes without surface carbon, APPL PHYS L, 79(10), 2001, pp. 1534-1536
Authors:
Alexandrou, I
Baxendale, M
Rupesinghe, NL
Amaratunga, GAJ
Kiely, CJ
Citation: I. Alexandrou et al., Field emission properties of nanocomposite carbon nitride films, J VAC SCI B, 18(6), 2000, pp. 2698-2703
Authors:
Garner, DM
Long, GM
Herbison, D
Amaratunga, GAJ
Citation: Dm. Garner et al., Field-emission triodes with integrated anodes, J VAC SCI B, 18(2), 2000, pp. 914-918
Authors:
Rupesinghe, NL
Cole, RJ
Chhowalla, M
Amaratunga, GAJ
Weightman, P
Citation: Nl. Rupesinghe et al., Tetrahedral amorphous carbon-silicon heterojunction band energy offsets, DIAM RELAT, 9(3-6), 2000, pp. 1148-1153
Authors:
Garner, DM
Chen, Y
Sabesan, L
Amaratunga, GAJ
Blackburn, A
Clark, J
Sekiariapuram, SS
Evans, AGR
Citation: Dm. Garner et al., A novel flash EEPROM cell based on trench technology for integration within power integrated circuits, IEEE ELEC D, 21(5), 2000, pp. 236-238
Authors:
Shi, X
Silva, SRP
Milne, WI
Amaratunga, GAJ
Citation: X. Shi et al., Special issue: Amorphous carbon into the next millennium proceedings of the second international specialist meeting on amorphous carbon - Preface, INT J MOD B, 14(2-3), 2000, pp. V-VI
Authors:
Papworth, AJ
Kiely, CJ
Burden, AP
Silva, SRP
Amaratunga, GAJ
Citation: Aj. Papworth et al., Electron-energy-loss spectroscopy characterization of the sp(2) bonding fraction within carbon thin films, PHYS REV B, 62(19), 2000, pp. 12628-12631
Authors:
Baxendale, M
Lim, KG
Amaratunga, GAJ
Citation: M. Baxendale et al., Thermoelectric power of aligned and randomly oriented carbon nanotubes, PHYS REV B, 61(19), 2000, pp. 12705-12708
Authors:
Sheng, K
Udrea, F
Amaratunga, GAJ
Citation: K. Sheng et al., Optimum carrier distribution of the IGBT, SOL ST ELEC, 44(9), 2000, pp. 1573-1583
Authors:
Chhowalla, M
Amaratunga, GAJ
Citation: M. Chhowalla et Gaj. Amaratunga, Thin films of fullerene-like MoS2 nanoparticles with ultra-low friction and wear, NATURE, 407(6801), 2000, pp. 164-167
Authors:
Huang, S
Amaratunga, GAJ
Udrea, F
Citation: S. Huang et al., Analysis of SEB and SEGR in super-junction MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2640-2647