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Results:
1-17
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Results: 17
Authors:
Bera, LK
Choi, WK
Tan, CS
Samanta, SK
Maiti, CK
Citation: Lk. Bera et al., High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si0.91Ge0.09 films, IEEE ELEC D, 22(8), 2001, pp. 387-389
Authors:
Samanta, SK
Maikap, S
Bera, LK
Banerjee, HD
Maiti, CK
Citation: Sk. Samanta et al., Effect of post-oxidation annealing on the electrical properties and oxynitride films of deposited oxide on strained-Si0.82Ge0.18 layers, SEMIC SCI T, 16(8), 2001, pp. 704-707
Authors:
Bera, LK
Senapati, B
Maikap, S
Maiti, CK
Citation: Lk. Bera et al., Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si, SOL ST ELEC, 45(3), 2001, pp. 379-383
Authors:
Tan, CS
Choi, WK
Bera, LK
Pey, KL
Antoniadis, DA
Fitzgerald, EA
Currie, MT
Maiti, CK
Citation: Cs. Tan et al., N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD, SOL ST ELEC, 45(11), 2001, pp. 1945-1949
Authors:
Natarajan, A
Bera, LK
Choi, WK
Osipowicz, T
Seng, HL
Citation: A. Natarajan et al., Rapid thermal oxidation of radio frequency sputtered polycrystalline Si1-xGex thin films, SOL ST ELEC, 45(11), 2001, pp. 1957-1961
Authors:
Teh, LK
Choi, WK
Bera, LK
Chim, WK
Citation: Lk. Teh et al., Structural characterisation of polycrystalline SiGe thin film, SOL ST ELEC, 45(11), 2001, pp. 1963-1966
Authors:
Choi, WK
Feng, W
Bera, LK
Yang, CY
Mi, J
Citation: Wk. Choi et al., Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films, J APPL PHYS, 90(11), 2001, pp. 5819-5824
Authors:
Choi, WK
Bera, LK
Chen, JH
Feng, W
Pey, KL
Yoong, H
Mi, J
Zhang, F
Yang, CY
Citation: Wk. Choi et al., Structural characterization of rapid thermally oxidized silicon-germanium-carbon alloy films, MAT SCI E B, 75(2-3), 2000, pp. 184-186
Authors:
Bera, LK
Senapati, B
Maikap, S
Maiti, CK
Citation: Lk. Bera et al., Effects of O-2/N2O-plasma treatment on nitride films on strained Si, SOL ST ELEC, 44(9), 2000, pp. 1533-1536
Authors:
Maikap, S
Bera, LK
Ray, SK
John, S
Banerjee, SK
Maiti, CK
Citation: S. Maikap et al., Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor, SOL ST ELEC, 44(6), 2000, pp. 1029-1034
Authors:
Choi, WK
Chen, JH
Bera, LK
Feng, W
Pey, KL
Mi, J
Yang, CY
Ramam, A
Chua, SJ
Pan, JS
Wee, ATS
Liu, R
Citation: Wk. Choi et al., Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition, J APPL PHYS, 87(1), 2000, pp. 192-197
Authors:
Bera, LK
Choi, WK
Feng, W
Yang, CY
Mi, J
Citation: Lk. Bera et al., Electrical properties of rapid thermal oxides on Si1-x-yGexCy films, APPL PHYS L, 77(2), 2000, pp. 256-258
Authors:
Senapati, B
Samanta, SK
Maikap, S
Bera, LK
Maiti, CK
Citation: B. Senapati et al., Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers, APPL PHYS L, 77(12), 2000, pp. 1840-1842
Authors:
Bera, LK
Ray, SK
Nayak, DK
Usami, N
Shiraki, Y
Maiti, CK
Citation: Lk. Bera et al., Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications, J ELEC MAT, 28(2), 1999, pp. 98-104
Authors:
Maikap, S
Bera, LK
Ray, SK
Maiti, CK
Citation: S. Maikap et al., NO/O-2/NO plasma-grown oxynitride films on strained-Si1-xGex, ELECTR LETT, 35(14), 1999, pp. 1202-1203
Authors:
Chattopadhyay, S
Bera, LK
Maiti, CK
Ray, SK
Bose, PK
Dentel, D
Kubler, L
Bischoff, JL
Citation: S. Chattopadhyay et al., Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes, J MAT S-M E, 9(6), 1998, pp. 403-407
Authors:
Chattopadhyay, S
Bera, LK
Ray, SK
Bose, PK
Maiti, CK
Citation: S. Chattopadhyay et al., Extraction of interface state density of Pt/p-strained-Si Schottky diode, THIN SOL FI, 335(1-2), 1998, pp. 142-145
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