Citation: D. Caputo et G. Decesare, MODULATION OF THRESHOLD VOLTAGES IN BIDIRECTIONAL A-SI-H SWITCHING DEVICES, Journal of non-crystalline solids, 230, 1998, pp. 1192-1195
Citation: D. Caputo et al., METASTABILITY EFFECT IN SOLAR BLIND UV AMORPHOUS-SILICON CARBIDE PHOTODETECTOR, Journal of non-crystalline solids, 230, 1998, pp. 1316-1320
Authors:
DECESARE G
MAIELLO G
MASINI G
BONDARENKO V
FERRARI A
Citation: G. Decesare et al., AMORPHOUS-SILICON SENSORS FOR OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES BURIED IN SILICON-WAFERS, Journal of non-crystalline solids, 230, 1998, pp. 1354-1358
Authors:
CAPUTO D
DECESARE G
PALMA F
TUCCI M
MINARINI C
TERZINI E
Citation: D. Caputo et al., INTERACTION OF PHOSPHORUS AND BORON IN COMPENSATED AMORPHOUS-SILICON FILMS, Journal of non-crystalline solids, 230, 1998, pp. 380-384
Citation: D. Caputo et al., MODELING AND REALIZATION OF AN AMORPHOUS-SILICON DEVICE WITH NEGATIVEDIFFERENTIAL RESISTANCE, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 270-276
Authors:
CAPUTO D
DECESARE G
NASCETTI A
PALMA F
PETRI M
Citation: D. Caputo et al., INFRARED PHOTODETECTION AT ROOM-TEMPERATURE USING PHOTOCAPACITANCE INAMORPHOUS-SILICON STRUCTURES, Applied physics letters, 72(10), 1998, pp. 1229-1231
Authors:
FERRARI A
MAIELLO G
LAMONICA S
DECESARE G
DINESCU G
DINESCU M
ALDEA E
CHITICA N
MORJAN I
GARTNER M
MASINI G
Citation: A. Ferrari et al., LASER AND NITROGEN PLASMA BEAM-INDUCED MODIFICATIONS IN AMORPHOUS-SILICON THIN-FILMS, Applied surface science, 110, 1997, pp. 87-92
Authors:
DECESARE G
IRRERA F
PALMA F
NASCETTI A
NALETTO G
NICOLOSI P
PACE E
Citation: G. Decesare et al., AMORPHOUS-SILICON THIN-FILM AS TUNABLE AND HIGH-SENSITIVE PHOTODETECTOR IN THE UV AND FAR UV SPECTRAL RANGE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 387(1-2), 1997, pp. 243-245
Authors:
CAPUTO D
DECESARE G
PALMA F
TUCCI M
MINARINI C
TERZINI E
Citation: D. Caputo et al., INVESTIGATION OF AMORPHOUS-SILICON COMPENSATED MATERIALS OVER A WIDE-RANGE OF DOPANT CONCENTRATIONS, Thin solid films, 303(1-2), 1997, pp. 269-272
Citation: D. Caputo et G. Decesare, ACTIVATION OF DOPANT IN THE P-LAYER OF AMORPHOUS-SILICON SOLAR-CELLS UNDER ILLUMINATION, Solar energy materials and solar cells, 43(3), 1996, pp. 263-272
Authors:
BACCARO S
DECESARE G
MAIELLO G
MASINI G
MONTECCHI M
PETTI M
FERRARI A
Citation: S. Baccaro et al., CONDUCTIVITY EFFECTS IN HYDROGENATED AMORPHOUS-SILICON INDUCED BY GAMMA-RAY IRRADIATION, Sensors and actuators. B, Chemical, 31(1-2), 1996, pp. 107-109
Authors:
DECESARE G
LAMONICA S
MAIELLO G
PROVERBIO E
FERRARI A
DINESCU M
CHITICA N
MORJAN I
ANDREI A
Citation: G. Decesare et al., CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE THIN-FILMS BY LASER TREATMENT, Surface & coatings technology, 80(1-2), 1996, pp. 237-241
Authors:
DECESARE G
LAMONICA S
MAIELLO G
MASINI G
PROVERBIO E
FERRARI A
CHITICA N
DINESCU M
ALEXANDRESCU R
MORJAN I
ROTIU E
Citation: G. Decesare et al., CRYSTALLIZATION OF SILICON-CARBIDE THIN-FILMS BY PULSED-LASER IRRADIATION, Applied surface science, 106, 1996, pp. 193-197
Authors:
RAMUNNO G
CAROLI E
DECESARE G
DONATI A
DUSI W
GRASSI D
CHIRCO P
SIFFERT P
AMANN M
KOEBEL JM
Citation: G. Ramunno et al., INVESTIGATION OF THE BEHAVIOR OF A MERCURIC IODIDE DETECTOR UNDER UNUSUAL IRRADIATION CONDITIONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 223-227
Authors:
GRASSI D
CAROLI E
DECESARE G
DONATI A
DUSI W
Citation: D. Grassi et al., STUDY OF A CDTE MULTIPIXEL SPECTROMETER FOR X-RAYS AND GAMMA-RAYS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 379(2), 1996, pp. 312-316
Citation: D. Caputo et G. Decesare, NEW A-SI-H 2-TERMINAL SWITCHING DEVICE FOR ACTIVE DISPLAY, Journal of non-crystalline solids, 200, 1996, pp. 1134-1136
Authors:
DECESARE G
GALLUZZI F
IRRERA F
LAUTA D
FERRAZZA F
TUCCI M
Citation: G. Decesare et al., VARIABLE SPECTRAL RESPONSE PHOTODETECTOR BASED ON CRYSTALLINE AMORPHOUS SILICON HETEROSTRUCTURE/, Journal of non-crystalline solids, 200, 1996, pp. 1189-1192
Authors:
DECESARE G
IORIO V
IRRERA F
PALMA F
TUCCI M
Citation: G. Decesare et al., AMORPHOUS-SILICON UV PHOTODETECTORS WITH REJECTION OF THE VISIBLE SPECTRUM, Journal of non-crystalline solids, 200, 1996, pp. 1198-1201
Citation: D. Caputo et al., SOLAR-BLIND UV PHOTODETECTORS FOR LARGE-AREA APPLICATIONS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1351-1356
Citation: G. Decesare et al., MODELING AND REALIZATION OF A HIGH-GAIN HOMOJUNCTION A-SI-H BULK BARRIER PHOTOTRANSISTOR, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1077-1084
Citation: D. Caputo et G. Decesare, A SWITCHING DEVICE BASED ON A-SI-H N-I-DELTA-P-I-N STACKED STRUCTURE - MODELING AND CHARACTERIZATION, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2109-2112
Authors:
DECESARE G
SALVATORI S
VINCENZONI R
ASCARELLI P
CAPPELLI E
PINZARI F
GALLUZZI F
Citation: G. Decesare et al., ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE DIAMOND FILMS ON SILICON, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 628-631
Citation: G. Masini et al., CURRENT-INDUCED DEGRADATION IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON - A NOVEL INVESTIGATION TECHNIQUE, Journal of applied physics, 77(3), 1995, pp. 1133-1136
Citation: G. Decesare et al., TUNABLE PHOTODETECTORS BASED ON AMORPHOUS SI SIC HETEROSTRUCTURES/, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 835-840