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Results: 1-25 | 26-26
Results: 1-25/26
LATTICE SITTING OF PLATINUM ATOMS IN DILUTED SIGE ALLOYS
Authors: DOBACZEWSKI L NIELSEN KB LARSEN AN HANSEN JL GOSCINSKI K PEAKER AR
Citation: L. Dobaczewski et al., LATTICE SITTING OF PLATINUM ATOMS IN DILUTED SIGE ALLOYS, Acta Physica Polonica. A, 94(2), 1998, pp. 297-299
LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON
Authors: DEIXLER P TERRY J HAWKINS ID EVANSFREEMAN JH PEAKER AR RUBALDO L MAUDE DK PORTAL JC DOBACZEWSKI L NIELSEN KB LARSEN AN MESLI A
Citation: P. Deixler et al., LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4GOLD-HYDROGEN COMPLEX IN SILICON, Applied physics letters, 73(21), 1998, pp. 3126-3128
PHOTOINDUCED DEFECTS CREATION ON SULFUR PASSIVATED SURFACE OF GAAS
Authors: ZYTKIEWICZ ZR DOBACZEWSKI L GOMEZ D BRIONES F
Citation: Zr. Zytkiewicz et al., PHOTOINDUCED DEFECTS CREATION ON SULFUR PASSIVATED SURFACE OF GAAS, Acta Physica Polonica. A, 92(5), 1997, pp. 1083-1086
SINGLE TEMPERATURE SCAN DETERMINATION OF DEFECT PARAMETERS IN DLTS EXPERIMENT
Authors: DOBACZEWSKI L KANCLERIS Z NIELSEN KB PEAKER AR
Citation: L. Dobaczewski et al., SINGLE TEMPERATURE SCAN DETERMINATION OF DEFECT PARAMETERS IN DLTS EXPERIMENT, Acta Physica Polonica. A, 92(4), 1997, pp. 724-726
LATTICE SITES OF SILICON IMPURITIES IN ALGAAS GROWN BY LIQUID-PHASE EPITAXY
Authors: KACZOR P ASHWIN MJ DOBOSZ D ZYTKIEWICZ ZR NEWMAN RC DOBACZEWSKI L
Citation: P. Kaczor et al., LATTICE SITES OF SILICON IMPURITIES IN ALGAAS GROWN BY LIQUID-PHASE EPITAXY, Acta Physica Polonica. A, 90(5), 1996, pp. 865-868
SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN ZNTE-CD1-XMNXTE1-YSEY HETEROJUNCTIONS
Authors: VANKHOI L DOBROWOLSKI W ZAKRZEWSKI A DOBACZEWSKI L GALAZKA RR
Citation: L. Vankhoi et al., SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN ZNTE-CD1-XMNXTE1-YSEY HETEROJUNCTIONS, Acta Physica Polonica. A, 90(5), 1996, pp. 883-886
IRON-BORON PAIR IN SILICON - OLD PROBLEM ANEW
Authors: DOBACZEWSKI L SURMA M
Citation: L. Dobaczewski et M. Surma, IRON-BORON PAIR IN SILICON - OLD PROBLEM ANEW, Acta Physica Polonica. A, 90(4), 1996, pp. 613-622
PERPENDICULAR ELECTRON-TRANSPORT IN GAAS ALGAAS MULTIPLE-QUANTUM WELLS STUDIED BY JUNCTION SPACE-CHARGE TECHNIQUES/
Authors: JIA YB GRIMMEISS HG HAN ZY DOBACZEWSKI L
Citation: Yb. Jia et al., PERPENDICULAR ELECTRON-TRANSPORT IN GAAS ALGAAS MULTIPLE-QUANTUM WELLS STUDIED BY JUNCTION SPACE-CHARGE TECHNIQUES/, Semiconductor science and technology, 11(11), 1996, pp. 1672-1677
NEW DONOR DOPING SOURCES FOR MOLECULAR-BEAM EPITAXY OF ALGASB AND ALGAAS
Authors: DOBACZEWSKI L MISSOUS M SINGER KE ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., NEW DONOR DOPING SOURCES FOR MOLECULAR-BEAM EPITAXY OF ALGASB AND ALGAAS, Materials science and technology, 12(2), 1996, pp. 193-195
DEEP LEVELS IN UNIFORMLY SI DOPED GAAS ALXGA1-XAS QUANTUM-WELLS AND SUPERLATTICES/
Authors: JIA YB HAN ZY GRIMMEISS HG DOBACZEWSKI L
Citation: Yb. Jia et al., DEEP LEVELS IN UNIFORMLY SI DOPED GAAS ALXGA1-XAS QUANTUM-WELLS AND SUPERLATTICES/, Journal of applied physics, 80(5), 1996, pp. 2860-2865
DEEP ACCEPTOR-LIKE STATES IN SI DOPED MOLECULAR-BEAM-EPITAXIAL-GROWN ALXGA1-XAS
Authors: JIA YB GRIMMEISS HG DOBACZEWSKI L
Citation: Yb. Jia et al., DEEP ACCEPTOR-LIKE STATES IN SI DOPED MOLECULAR-BEAM-EPITAXIAL-GROWN ALXGA1-XAS, Journal of applied physics, 80(2), 1996, pp. 859-863
DEEP ELECTRON TRAPS IN CDTE-IN FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: ZAKRZEWSKI AK DOBACZEWSKI L KARCZEWSKI G WOJTOWICZ T KOSSUT J
Citation: Ak. Zakrzewski et al., DEEP ELECTRON TRAPS IN CDTE-IN FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Acta Physica Polonica. A, 88(5), 1995, pp. 961-964
TRANSITION METAL-RELATED CENTERS IN SILICON STUDIED BY HIGH-RESOLUTION DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: DOBACZEWSKI L KAMINSKI P KOZLOWSKI R SURMA M
Citation: L. Dobaczewski et al., TRANSITION METAL-RELATED CENTERS IN SILICON STUDIED BY HIGH-RESOLUTION DEEP-LEVEL TRANSIENT SPECTROSCOPY, Acta Physica Polonica. A, 88(4), 1995, pp. 703-706
NEW LOCAL VIBRATIONAL-MODES RELATED TO SILICON IN BULK ALGAAS
Authors: KACZOR P ZYTKIEWICZ ZR DOBACZEWSKI L
Citation: P. Kaczor et al., NEW LOCAL VIBRATIONAL-MODES RELATED TO SILICON IN BULK ALGAAS, Acta Physica Polonica. A, 88(4), 1995, pp. 759-762
ABSORPTION STUDIES OF THE SULFUR DONOR IN GASB
Authors: KACZOR P GERRITS AM DOBACZEWSKI L KALINSKI Z WITTLIN A
Citation: P. Kaczor et al., ABSORPTION STUDIES OF THE SULFUR DONOR IN GASB, Acta Physica Polonica. A, 87(2), 1995, pp. 399-402
ON SUBBAND MOBILITIES OBSERVED IN DELTA-DOPED ALGAAS GAAS QUANTUM-WELLS AND GAAS-LAYERS/
Authors: DOBACZEWSKI L MAUDE DK MISSOUS M PORTAL JC
Citation: L. Dobaczewski et al., ON SUBBAND MOBILITIES OBSERVED IN DELTA-DOPED ALGAAS GAAS QUANTUM-WELLS AND GAAS-LAYERS/, Acta Physica Polonica. A, 87(1), 1995, pp. 201-204
THE USE OF GA2SE3 AND GA2S3 AS DONOR DOPING SOURCES FOR MBE-GROWN ALXGA1-XSB AND ALXGA1-XAS
Authors: DOBACZEWSKI L SINGER KE MISSOUS M TRUSCOTT WS ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., THE USE OF GA2SE3 AND GA2S3 AS DONOR DOPING SOURCES FOR MBE-GROWN ALXGA1-XSB AND ALXGA1-XAS, Semiconductor science and technology, 10(4), 1995, pp. 509-514
LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW INSIGHT INTO DEFECT MICROSCOPY
Authors: DOBACZEWSKI L HAWKINS ID PEAKER AR
Citation: L. Dobaczewski et al., LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW INSIGHT INTO DEFECT MICROSCOPY, Materials science and technology, 11(10), 1995, pp. 1071-1073
PROPERTIES OF EPITAXIALLY GROWN CDTE LAYERS DOPED WITH INDIUM
Authors: KARCZEWSKI G ZAKRZEWSKI AK DOBACZEWSKI L DOBROWOLSKI W GRODZICKA E JAROSZYNSKI J WOJTOWICZ T KOSSUT J
Citation: G. Karczewski et al., PROPERTIES OF EPITAXIALLY GROWN CDTE LAYERS DOPED WITH INDIUM, Thin solid films, 267(1-2), 1995, pp. 79-83
STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P)
Authors: DOBACZEWSKI L KACZOR P MISSOUS M PEAKER AR ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P), Journal of applied physics, 78(4), 1995, pp. 2468-2477
LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS
Authors: DOBACZEWSKI L KACZOR P HAWKINS ID PEAKER AR
Citation: L. Dobaczewski et al., LAPLACE TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPIC STUDIES OF DEFECTS IN SEMICONDUCTORS, Journal of applied physics, 76(1), 1994, pp. 194-198
PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHTS IN AL ALGAAS JUNCTIONS/
Authors: DOBACZEWSKI L LANGER JM MISSOUS M
Citation: L. Dobaczewski et al., PRESSURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHTS IN AL ALGAAS JUNCTIONS/, Acta Physica Polonica. A, 84(4), 1993, pp. 741-744
MOLECULAR-BEAM EPITAXY OF AL-CHI-GA1-CHI-SB AND AL-CHI-GA1-CHI-AS - NEW DONOR DOPING SOURCES
Authors: DOBACZEWSKI L MISSOUS M SINGER KE ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., MOLECULAR-BEAM EPITAXY OF AL-CHI-GA1-CHI-SB AND AL-CHI-GA1-CHI-AS - NEW DONOR DOPING SOURCES, Acta Physica Polonica. A, 84(4), 1993, pp. 826-828
OBSERVATION OF THE INTERMEDIATE-ENERGY STATE OF THE DX CENTER IN ALXGA1-XASTE IN NONSTATIONARY ABSORPTION EXPERIMENTS
Authors: KACZOR P ZYTKIEWICZ ZR DOBACZEWSKI L
Citation: P. Kaczor et al., OBSERVATION OF THE INTERMEDIATE-ENERGY STATE OF THE DX CENTER IN ALXGA1-XASTE IN NONSTATIONARY ABSORPTION EXPERIMENTS, Semiconductor science and technology, 8(11), 1993, pp. 1973-1976
INFLUENCE OF ELECTRIC-FIELD ON ELECTRON-EMISSION FROM DX(TE) CENTERS IN AL0.55GA0.45AS
Authors: DOBACZEWSKI L DMOCHOWSKI JE LANGER JM
Citation: L. Dobaczewski et al., INFLUENCE OF ELECTRIC-FIELD ON ELECTRON-EMISSION FROM DX(TE) CENTERS IN AL0.55GA0.45AS, Semiconductor science and technology, 6(8), 1991, pp. 752-755
Risultati: 1-25 | 26-26