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Results: 1-25/34
Authors:
Qasaimeh, O
Zhou, WD
Bhattacharya, P
Huffaker, D
Deppe, DG
Citation: O. Qasaimeh et al., Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications, J LIGHTW T, 19(4), 2001, pp. 546-552
Authors:
Lee, ES
Ell, C
Brick, P
Spiegelberg, C
Gibbs, HM
Khitrova, G
Deppe, DG
Huffaker, DL
Citation: Es. Lee et al., Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities, J APPL PHYS, 89(1), 2001, pp. 807-809
Authors:
Huang, H
Deppe, DG
Citation: H. Huang et Dg. Deppe, Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser, IEEE J Q EL, 37(5), 2001, pp. 691-698
Authors:
Zhang, L
Boggess, TF
Gundogdu, K
Flatte, ME
Deppe, DG
Cao, C
Shchekin, OB
Citation: L. Zhang et al., Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots, APPL PHYS L, 79(20), 2001, pp. 3320-3322
Authors:
Boggess, TF
Zhang, L
Deppe, DG
Huffaker, DL
Cao, C
Citation: Tf. Boggess et al., Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots, APPL PHYS L, 78(3), 2001, pp. 276-278
Authors:
Zou, Z
Chen, H
Deppe, DG
Citation: Z. Zou et al., Apertured quantum dot microcavity light emitting diodes, APPL PHYS L, 78(20), 2001, pp. 3067-3069
Authors:
Shchekin, OB
Deppe, DG
Lu, D
Citation: Ob. Shchekin et al., Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots, APPL PHYS L, 78(20), 2001, pp. 3115-3117
Authors:
Coleman, JJ
Deppe, DG
Bimberg, D
Arakawa, Y
Citation: Jj. Coleman et al., Introduction to the issue on nanostructures and quantum dots, IEEE S T QU, 6(3), 2000, pp. 405-407
Authors:
Huffaker, DL
Park, G
Zou, ZZ
Shchekin, OB
Deppe, DG
Citation: Dl. Huffaker et al., Continuous-wave low-threshold performance of 1.3-mu m InGaAs-GaAs quantum-dot lasers, IEEE S T QU, 6(3), 2000, pp. 452-461
Authors:
Shchekin, OB
Park, G
Huffaker, DL
Mo, QW
Deppe, DG
Citation: Ob. Shchekin et al., Low-threshold, continous-wave two-stack quantum-dot laser with reduced temperature sensitivity, IEEE PHOTON, 12(9), 2000, pp. 1120-1122
Authors:
Par, G
Shchekin, OB
Huffaker, DL
Deppe, DG
Citation: G. Par et al., Low-threshold oxide-confined 1.3-mu m quantum-dot laser, IEEE PHOTON, 12(3), 2000, pp. 230-232
Authors:
Zou, Z
Huffaker, DL
Deppe, DG
Citation: Z. Zou et al., Ultralow-threshold cryogenic vertical-cavity surface-emitting laser, IEEE PHOTON, 12(1), 2000, pp. 1-3
Authors:
Ell, C
Brick, P
Hubner, M
Lee, ES
Lyngnes, O
Prineas, JP
Khitrova, G
Gibbs, HM
Kira, M
Jahnke, F
Koch, SW
Deppe, DG
Huffaker, DL
Citation: C. Ell et al., Quantum correlations in the nonperturbative regime of semiconductor microcavities, PHYS REV L, 85(25), 2000, pp. 5392-5395
Authors:
Park, G
Shchekin, OB
Deppe, DG
Citation: G. Park et al., Temperature dependence of gain saturation in multilevel quantum dot lasers, IEEE J Q EL, 36(9), 2000, pp. 1065-1071
Authors:
Huang, H
Deppe, DG
Citation: H. Huang et Dg. Deppe, Obtaining high efficiency at low power using a quantum-dot microcavity light-emitting diode, IEEE J Q EL, 36(6), 2000, pp. 674-679
Authors:
Qasaimeh, O
Zhou, WD
Bhattacharya, P
Huffaker, D
Deppe, DG
Citation: O. Qasaimeh et al., Monolithically integrated low-power phototransceiver incorporating InGaAs/GaAs quantum-dot microcavity LED and modulated barrier photodiode, ELECTR LETT, 36(23), 2000, pp. 1955-1957
Authors:
Chen, H
Zou, Z
Shchekin, OB
Deppe, DG
Citation: H. Chen et al., InAs quantum-dot lasers operating near 1.3 mu m with high characteristic temperature for continuous-wave operation, ELECTR LETT, 36(20), 2000, pp. 1703-1704
Authors:
Park, G
Shchekin, OB
Huffaker, DL
Deppe, DG
Citation: G. Park et al., InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature, ELECTR LETT, 36(15), 2000, pp. 1283-1284
Authors:
Shchekin, OB
Park, G
Huffaker, DL
Deppe, DG
Citation: Ob. Shchekin et al., Discrete energy level separation and the threshold temperature dependence of quantum dot lasers, APPL PHYS L, 77(4), 2000, pp. 466-468
Authors:
Deppe, DG
Huffaker, DL
Citation: Dg. Deppe et Dl. Huffaker, Quantum dimensionality, entropy, and the modulation response of quantum dot lasers, APPL PHYS L, 77(21), 2000, pp. 3325-3327
Authors:
Zhang, L
Boggess, TF
Deppe, DG
Huffaker, DL
Shchekin, OB
Cao, C
Citation: L. Zhang et al., Dynamic response of 1.3-mu m-wavelength InGaAs/GaAs quantum dots, APPL PHYS L, 76(10), 2000, pp. 1222-1224
Authors:
Huffaker, DL
Deppe, DG
Citation: Dl. Huffaker et Dg. Deppe, Intracavity contacts for low-threshold oxide-confined vertical-cavity surface-emitting lasers, IEEE PHOTON, 11(8), 1999, pp. 934-936
Authors:
Park, G
Huffaker, DL
Zou, Z
Shchekin, OB
Deppe, DG
Citation: G. Park et al., Temperature dependence of lasing characteristics for long-wavelength (1.3-mu m) GaAs-based quantum-dot lasers, IEEE PHOTON, 11(3), 1999, pp. 301-303
Authors:
Huffaker, DL
Zou, ZZ
Park, G
Shchekin, OB
Deppe, DG
Citation: Dl. Huffaker et al., Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 mu m) GaAs-based quantum dot lasers, J ELEC MAT, 28(5), 1999, pp. 532-536
Authors:
Graham, LA
Huffaker, DL
Csutak, SM
Deng, Q
Deppe, DG
Citation: La. Graham et al., Spontaneous lifetime control of quantum dot emitters in apertured microcavities, J APPL PHYS, 85(6), 1999, pp. 3383-3385