AAAAAA

   
Results: 1-25 | 26-27
Results: 1-25/27
SEM STUDIES OF NONUNIFORMITIES AND DEFECT S IN GAN AND ALGAN EPITAXIAL-FILMS
Authors: GOVORKOV AV POLYAKOV AY SMIRNOV NB REDWING JM SKOWRONSKI M SHIN M
Citation: Av. Govorkov et al., SEM STUDIES OF NONUNIFORMITIES AND DEFECT S IN GAN AND ALGAN EPITAXIAL-FILMS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 62(3), 1998, pp. 471-476
DEEP TRAPS IN HIGH-RESISTIVITY ALGAN FILMS
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV REDWING JM
Citation: Ay. Polyakov et al., DEEP TRAPS IN HIGH-RESISTIVITY ALGAN FILMS, Solid-state electronics, 42(5), 1998, pp. 831-838
PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW WILSON RG
Citation: Ay. Polyakov et al., PROPERTIES OF SI DONORS AND PERSISTENT PHOTOCONDUCTIVITY IN ALGAN, Solid-state electronics, 42(4), 1998, pp. 627-635
SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY GOVORKOV AV SMIRNOV NB MILVIDSKII MG REDWING JM SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., SCANNING ELECTRON-MICROSCOPE STUDIES OF ALGAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(4), 1998, pp. 637-646
STUDIES OF THE ORIGIN OF THE YELLOW LUMINESCENCE BAND, THE NATURE OF NONRADIATIVE RECOMBINATION AND THE ORIGIN OF PERSISTENT PHOTOCONDUCTIVITY IN N-GAN FILMS
Authors: POLYAKOV AY SMIRNOV NB USIKOV AS GOVORKOV AV PUSHNIY BV
Citation: Ay. Polyakov et al., STUDIES OF THE ORIGIN OF THE YELLOW LUMINESCENCE BAND, THE NATURE OF NONRADIATIVE RECOMBINATION AND THE ORIGIN OF PERSISTENT PHOTOCONDUCTIVITY IN N-GAN FILMS, Solid-state electronics, 42(11), 1998, pp. 1959-1967
DEEP CENTERS AND THEIR SPATIAL-DISTRIBUTION IN UNDOPED GAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV SHIN M SKOWRONSKI M GREVE DW
Citation: Ay. Polyakov et al., DEEP CENTERS AND THEIR SPATIAL-DISTRIBUTION IN UNDOPED GAN FILMS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 84(2), 1998, pp. 870-876
GROWTH OF GABN TERNARY SOLUTIONS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: POLYAKOV AY SHIN M SKOWRONSKI M GREVE DW WILSON RG GOVORKOV AV DESROSIERS RM
Citation: Ay. Polyakov et al., GROWTH OF GABN TERNARY SOLUTIONS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 26(3), 1997, pp. 237-242
SCANNING ELECTRON-MICROSCOPY STUDIES OF DOUBLE-LAYER SILICON STRUCTURES PREPARED BY EPITAXY AND DIRECT BONDING
Authors: GOVORKOV AV ENISHERLOVA KL MILVIDSKII MG CHERVYAKOVA EN
Citation: Av. Govorkov et al., SCANNING ELECTRON-MICROSCOPY STUDIES OF DOUBLE-LAYER SILICON STRUCTURES PREPARED BY EPITAXY AND DIRECT BONDING, Scanning, 19(1), 1997, pp. 55-59
OPTICAL AND LUMINESCENCE PROPERTIES OF STRESSED LAYERS WITH QUANTUM-WELLS IN GAINASP INP HETEROSTRUCTURES GROWN BY MOS HYDRIDE EPITAXY/
Authors: GOVORKOV AV LABUTIN OA
Citation: Av. Govorkov et Oa. Labutin, OPTICAL AND LUMINESCENCE PROPERTIES OF STRESSED LAYERS WITH QUANTUM-WELLS IN GAINASP INP HETEROSTRUCTURES GROWN BY MOS HYDRIDE EPITAXY/, Semiconductors, 30(9), 1996, pp. 851-856
CONDUCTION-BAND OFFSETS IN INGAALP INGAP HETEROJUNCTIONS AS MEASURED BY DLTS/
Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV CHELNIY AA MILNES AG LI XL LEIFEROV BM ALUEV AN
Citation: Ay. Polyakov et al., CONDUCTION-BAND OFFSETS IN INGAALP INGAP HETEROJUNCTIONS AS MEASURED BY DLTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 39(2), 1996, pp. 79-81
THE INFLUENCE OF OXYGEN IN PHOSPHINE ON ELECTRICAL-PROPERTIES OF UNDOPED INGAALP LAYERS GROWN BY MOCVD
Authors: POLYAKOV AY CHELNIY AA SMIRNOV NB GOVORKOV AV MILNES AG LI XL ALUEV AN ORLOV PB
Citation: Ay. Polyakov et al., THE INFLUENCE OF OXYGEN IN PHOSPHINE ON ELECTRICAL-PROPERTIES OF UNDOPED INGAALP LAYERS GROWN BY MOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 36-40
MICROCATHODOLUMINESCENCE AND EBIC SEM STU DIES OF MOCVD GROWN INGAAS AND INGAASP QUANTUM WALL STRUCTURE
Authors: GOVORKOV AV LABUTIN OA POLYAKOV AY
Citation: Av. Govorkov et al., MICROCATHODOLUMINESCENCE AND EBIC SEM STU DIES OF MOCVD GROWN INGAAS AND INGAASP QUANTUM WALL STRUCTURE, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 2-7
SEM STUDIES DOUBLE-LAYER SILICON STRUCTUR ES PREPARED BY EPITAXY AND DIRECT BONDING
Authors: GOVORKOV AV ENISHERLOVA KL MILVIDSKII MG
Citation: Av. Govorkov et al., SEM STUDIES DOUBLE-LAYER SILICON STRUCTUR ES PREPARED BY EPITAXY AND DIRECT BONDING, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 8-13
DEVICE STRUCTURES ON POROUS SILICON STUDIED BY SCANNING ELECTRON-MICROSCOPY IN THE ELECTRON-BEAM CURRENT-MODE
Authors: BALAGUROV LA KATZ EA PETROVA EA GOVORKOV AV RITOVA NI EVDOKIMOV VM LUKYANOV AE BUTILKINA NA
Citation: La. Balagurov et al., DEVICE STRUCTURES ON POROUS SILICON STUDIED BY SCANNING ELECTRON-MICROSCOPY IN THE ELECTRON-BEAM CURRENT-MODE, Journal of applied physics, 80(1), 1996, pp. 574-578
THE INVESTIGATION OF DEVICE STRUCTURES ON POROUS SI BY SEM EBIC TECHNIQUE
Authors: BALAGUROV LA KATZ EA LUKYANOV AE BUTYLKINA NA PETROVA EA GOVORKOV AV
Citation: La. Balagurov et al., THE INVESTIGATION OF DEVICE STRUCTURES ON POROUS SI BY SEM EBIC TECHNIQUE, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 59(2), 1995, pp. 8-13
EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP
Authors: POLYAKOV AY CHELNIY AA GOVORKOV AV SMIRNOV NB MILNES AG PEARTON SJ WILSON RG BALMASHNOV AA ALUEV AN MARKOV AV
Citation: Ay. Polyakov et al., EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP, Solid-state electronics, 38(6), 1995, pp. 1131-1135
BAND OFFSETS IN HETEROJUNCTIONS OF INGAASSB ALGAASSB/
Authors: POLYAKOV AY MILNES AG GOVORKOV AV DRUZHININA LV TUNITSKAYA IV SMIRNOV NB
Citation: Ay. Polyakov et al., BAND OFFSETS IN HETEROJUNCTIONS OF INGAASSB ALGAASSB/, Solid-state electronics, 38(2), 1995, pp. 525-529
ION-IMPLANTATION EFFECTS IN GASB
Authors: MILNES AG LI XL POLYAKOV AY SMIRNOV NB GOVORKOV AV BORODINA OM TUNITSKAYA IV KOZHUKHOVA EA MILVIDSKAYA AG
Citation: Ag. Milnes et al., ION-IMPLANTATION EFFECTS IN GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 129-136
HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB
Authors: POLYAKOV AY TUNITSKAYA IV DRUZHININA LV GOVORKOV AV SMIRNOV NB KOZHUKHOVA EA BORODINA OM MILNES AG LI XL PEARTON SJ BALMASHNOV AA
Citation: Ay. Polyakov et al., HYDROGEN PASSIVATION EFFECTS IN QUATERNARY SOLID-SOLUTIONS OF INGAASSB LATTICE-MATCHED TO GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 137-141
THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS
Authors: MILVIDSKAYA AG POLYAKOV AY KOLCHINA GP MILNES AG GOVORKOV AV SMIRNOV NB TUNITSKAYA IV
Citation: Ag. Milvidskaya et al., THE PROPERTIES OF HEAVILY COMPENSATED HIGH-RESISTIVITY GASB CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 279-282
THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY
Authors: DOLGINOV LM TUNITSKAYA IV POLYAKOV AY DRUZHININA LV VINOGRADOVA GV SMIRNOV NB GOVORKOV AV BORODINA OM KOZHUKHOVA EA BALMASHNOV AA MILNES AG
Citation: Lm. Dolginov et al., THE EFFECT OF GD DOPING ON CARRIER CONCENTRATION IN INGAASSB LAYERS GROWN BY LIQUID-PHASE EPITAXY, Thin solid films, 251(2), 1994, pp. 147-150
PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION
Authors: POLYAKOV AY MILNES AG SMIRNOV NB KOZHUKHOVA EA DRUZHININA LV GOVORKOV AV DOLGINOV LM TUNITSKAYA IV
Citation: Ay. Polyakov et al., PROPERTIES OF MIS STRUCTURES PREPARED ON INGAASSB QUATERNARY SOLUTIONS BY ANODIC-OXIDATION, Solid-state electronics, 37(10), 1994, pp. 1691-1694
EFFECT OF VARIOUS FACTORS UPON THE STOICHIOMETRY OF GAAS HOMOEPITAXIAL LAYERS GROWN BY LPE
Authors: GOVORKOV AV NOVIKOV AG MILVIDSKII MG SHLENSKII AA FOMIN VG YUGOVA TG
Citation: Av. Govorkov et al., EFFECT OF VARIOUS FACTORS UPON THE STOICHIOMETRY OF GAAS HOMOEPITAXIAL LAYERS GROWN BY LPE, Physica status solidi. a, Applied research, 144(1), 1994, pp. 121-130
HYDROGEN PASSIVATION EFFECTS IN INGAALP AND INGAP
Authors: GORBYLEV VA CHELNIY AA POLYAKOV AY PEARTON SJ SMIRNOV NB WILSON RG MILNES AG CNEKALIN AA GOVORKOV AV LEIFEROV BM BORODINA OM
Citation: Va. Gorbylev et al., HYDROGEN PASSIVATION EFFECTS IN INGAALP AND INGAP, Journal of applied physics, 76(11), 1994, pp. 7390-7398
MICROCATHODOLUMINESCENCE STUDY OF POLYCRY STALLINE ZNSE
Authors: BRUK AS GOVORKOV AV
Citation: As. Bruk et Av. Govorkov, MICROCATHODOLUMINESCENCE STUDY OF POLYCRY STALLINE ZNSE, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 57(8), 1993, pp. 41-43
Risultati: 1-25 | 26-27