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Results: 25
Authors:
ROUSSEAU PM
GRIFFIN PB
FANG WT
PLUMMER JD
Citation: Pm. Rousseau et al., ARSENIC DEACTIVATION ENHANCED DIFFUSION - A TIME, TEMPERATURE, AND CONCENTRATION STUDY, Journal of applied physics, 84(7), 1998, pp. 3593-3601
Authors:
GRIFFIN PB
CAO M
VANDEVOORDE PV
CHANG YL
GREENE WM
Citation: Pb. Griffin et al., INDIUM TRANSIENT ENHANCED DIFFUSION, Applied physics letters, 73(20), 1998, pp. 2986-2988
Authors:
URAL A
GRIFFIN PB
PLUMMER JD
Citation: A. Ural et al., EXPERIMENTAL-EVIDENCE FOR A DUAL VACANCY INTERSTITIAL MECHANISM OF SELF-DIFFUSION IN SILICON, Applied physics letters, 73(12), 1998, pp. 1706-1708
Authors:
HUANG SF
GRIFFIN PB
RISSMAN P
PLUMMER JD
Citation: Sf. Huang et al., NITROGEN-DOPED POLY SPACER LOCAL OXIDATION, IEEE electron device letters, 18(7), 1997, pp. 346-348
Authors:
ROUSSEAU PM
CROWDER SW
GRIFFIN PB
PLUMMER JD
Citation: Pm. Rousseau et al., ARSENIC DEACTIVATION ENHANCED DIFFUSION AND THE REVERSE SHORT-CHANNELEFFECT, IEEE electron device letters, 18(2), 1997, pp. 42-44
Authors:
GRIFFIN PB
Citation: Pb. Griffin, INPUT DEMAND ELASTICITIES FOR HETEROGENEOUS LABOR - FIRM-LEVEL ESTIMATES AND AN INVESTIGATION INTO THE EFFECTS OF AGGREGATION, Southern economic journal, 62(4), 1996, pp. 889-901
Authors:
CHAO HS
CROWDER SW
GRIFFIN PB
PLUMMER JD
Citation: Hs. Chao et al., SPECIES AND DOSE DEPENDENCE OF ION-IMPLANTATION DAMAGE-INDUCED TRANSIENT ENHANCED DIFFUSION, Journal of applied physics, 79(5), 1996, pp. 2352-2363
Authors:
ROUSSEAU PM
GRIFFIN PB
KUEHNE SC
PLUMMER JD
Citation: Pm. Rousseau et al., ENHANCED DIFFUSION BY ELECTRICAL DEACTIVATION OF ARSENIC AND ITS IMPLICATIONS FOR BIPOLAR-DEVICES, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 547-553
Authors:
SMEYS P
GRIFFIN PB
SARASWAT KC
Citation: P. Smeys et al., INFLUENCE OF POST-OXIDATION COOLING RATE ON RESIDUAL-STRESS AND PN-JUNCTION LEAKAGE CURRENT IN LOGOS ISOLATED STRUCTURES, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1989-1993
Authors:
ROUSSEAU PM
GRIFFIN PB
LUNING S
PLUMMER JD
Citation: Pm. Rousseau et al., A MODEL FOR MOBILITY DEGRADATION IN HIGHLY DOPED ARSENIC LAYERS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2025-2027
Authors:
CHAO HS
GRIFFIN PB
PLUMMER JD
RAFFERTY CS
Citation: Hs. Chao et al., THE DOSE, ENERGY, AND TIME-DEPENDENCE OF SILICON SELF-IMPLANTATION INDUCED TRANSIENT ENHANCED DIFFUSION AT 750-DEGREES-C, Applied physics letters, 69(14), 1996, pp. 2113-2115
Authors:
FANG TT
FANG WTC
GRIFFIN PB
PLUMMER JD
Citation: Tt. Fang et al., CALCULATION OF THE FRACTIONAL INTERSTITIAL COMPONENT OF BORON-DIFFUSION AND SEGREGATION COEFFICIENT OF BORON IN SI0.8GE0.2, Applied physics letters, 68(6), 1996, pp. 791-793
Authors:
CHAO HS
GRIFFIN PB
PLUMMER JD
Citation: Hs. Chao et al., INFLUENCE OF DISLOCATION LOOPS CREATED BY AMORPHIZING IMPLANTS ON POINT-DEFECT AND BORON-DIFFUSION IN SILICON, Applied physics letters, 68(25), 1996, pp. 3570-3572
Authors:
HERRERAGOMEZ A
ROUSSEAU PM
MATERLIK G
KENDELEWICZ T
WOICIK JC
GRIFFIN PB
PLUMMER J
SPICER WE
Citation: A. Herreragomez et al., EVOLUTION OF THE CRYSTALLOGRAPHIC POSITION OF AS IMPURITIES IN HEAVILY-DOPED SI CRYSTALS AS THEIR ELECTRICAL-ACTIVITY CHANGES, Applied physics letters, 68(22), 1996, pp. 3090-3092
Authors:
FANG WTC
FANG TT
GRIFFIN PB
PLUMMER JD
Citation: Wtc. Fang et al., SURFACE AND BULK POINT-DEFECT GENERATION IN CZOCHRALSKI AND FLOAT-ZONE TYPE SILICON-WAFERS, Applied physics letters, 68(15), 1996, pp. 2085-2087
Authors:
PLUMMER JD
GRIFFIN PB
Citation: Jd. Plummer et Pb. Griffin, CHALLENGES FOR PREDICTIVE PROCESS SIMULATION IN SUB 0.1 MU-M SILICON DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 160-166
Authors:
LEVER RF
GRIFFIN PB
RAUSCH WA
Citation: Rf. Lever et al., OXIDATION ENHANCED DIFFUSION OF BORON IN SILICON AT 650-750-DEGREES-CUSING STEAM IN THE RANGE 1-15 ATMOSPHERES, Journal of applied physics, 78(5), 1995, pp. 3115-3120
Authors:
SMEYS PIL
GRIFFIN PB
SARASWAT KC
Citation: Pil. Smeys et al., MATERIAL PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FOR MODELING AND CALIBRATING THE SIMULATION OF ADVANCED ISOLATION STRUCTURES, Journal of applied physics, 78(4), 1995, pp. 2837-2842
Authors:
GRIFFIN PB
CROWDER SW
KNIGHT JM
Citation: Pb. Griffin et al., DOSE LOSS IN PHOSPHORUS IMPLANTS DUE TO TRANSIENT DIFFUSION AND INTERFACE SEGREGATION, Applied physics letters, 67(4), 1995, pp. 482-484
Authors:
LAWTHER DW
MYLER U
SIMPSON PJ
ROUSSEAU PM
GRIFFIN PB
PLUMMER JD
Citation: Dw. Lawther et al., VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC, Applied physics letters, 67(24), 1995, pp. 3575-3577
Authors:
CROWDER SW
HSIEH CJ
GRIFFIN PB
PLUMMER JD
Citation: Sw. Crowder et al., EFFECT OF BURIED SI-SIO2 INTERFACES ON OXIDATION AND IMPLANT-ENHANCEDDOPANT DIFFUSION IN THIN SILICON-ON-INSULATOR FILMS, Journal of applied physics, 76(5), 1994, pp. 2756-2764
Authors:
ROUSSEAU PM
GRIFFIN PB
PLUMMER JD
Citation: Pm. Rousseau et al., ELECTRICAL DEACTIVATION OF ARSENIC AS A SOURCE OF POINT-DEFECTS, Applied physics letters, 65(5), 1994, pp. 578-580
Authors:
CROWDER SW
GRIFFIN PB
PLUMMER JD
Citation: Sw. Crowder et al., CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY, Applied physics letters, 65(13), 1994, pp. 1698-1699
Authors:
CROWDER SW
GRIFFIN PB
HSIEH CJ
WEI GY
PLUMMER JD
ALLEN LP
Citation: Sw. Crowder et al., OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL, Applied physics letters, 64(24), 1994, pp. 3264-3266
Authors:
GRIFFIN PB
LEVER RF
PACKAN PA
PLUMMER JD
Citation: Pb. Griffin et al., DOPING AND DAMAGE DOSE DEPENDENCE OF IMPLANT INDUCED TRANSIENT ENHANCED DIFFUSION BELOW THE AMORPHIZATION THRESHOLD, Applied physics letters, 64(10), 1994, pp. 1242-1244
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