ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-50 | 51-53

Results: 26-50/53

A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G

Citation: B. De Salvo et al., A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current, SOL ST ELEC, 44(6), 2000, pp. 895-903

Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films

Authors: Hefyene, N Cristoloveanu, S Ghibaudo, G Gentil, P Moriyasu, Y Morishita, T Matsui, M Yasujima, A

Citation: N. Hefyene et al., Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films, SOL ST ELEC, 44(10), 2000, pp. 1711-1715

Capacitance-Voltage (C-V) characterization of 20 angstrom thick gate oxide: parameter extraction and modeling

Authors: Clerc, R Devoivre, T Ghibaudo, G Caillat, C Guegan, G Reimbold, G Pananakakis, G

Citation: R. Clerc et al., Capacitance-Voltage (C-V) characterization of 20 angstrom thick gate oxide: parameter extraction and modeling, MICROEL REL, 40(4-5), 2000, pp. 571-575

Wet or dry ultrathin oxides: impact on gate oxide and device reliability

Authors: Bruyere, S Guyader, F De Coster, W Vincent, E Saadeddine, M Revil, N Ghibaudo, G

Citation: S. Bruyere et al., Wet or dry ultrathin oxides: impact on gate oxide and device reliability, MICROEL REL, 40(4-5), 2000, pp. 691-695

Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals

Authors: De Salvo, B Luthereau, P Baron, T Ghibaudo, G Martin, F Fraboulet, D Reimbold, G Gautier, J

Citation: B. De Salvo et al., Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals, MICROEL REL, 40(4-5), 2000, pp. 863-866

Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Authors: Chroboczek, JA Ghibaudo, G

Citation: Ja. Chroboczek et G. Ghibaudo, Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors, MICROEL REL, 40(11), 2000, pp. 1897-1903

Electrically and radiation induced leakage currents in thin oxides

Authors: Scarpa, A Riess, P Ghibaudo, G Paccagnella, A Pananakakis, G Ceschia, M Ghidini, G

Citation: A. Scarpa et al., Electrically and radiation induced leakage currents in thin oxides, MICROEL REL, 40(1), 2000, pp. 57-67

Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport

Authors: Riess, P Ghibaudo, G Pananakakis, G

Citation: P. Riess et al., Stress-induced leakage current generation kinetics based on anode hole injection and hole dispersive transport, J APPL PHYS, 87(9), 2000, pp. 4626-4628

Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides

Authors: Riess, P Ceschia, M Paccagnella, A Ghibaudo, G Pananakakis, G

Citation: P. Riess et al., Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides, APPL PHYS L, 76(9), 2000, pp. 1158-1160

A dermoid sinus in a Siberian Husky

Authors: Cornegliani, L Ghibaudo, G

Citation: L. Cornegliani et G. Ghibaudo, A dermoid sinus in a Siberian Husky, VET DERMATO, 10(1), 1999, pp. 47-49

Determination of base and emitter resistances in bipolar junction transistors from low frequency noise and static measurements

Authors: Llinares, P Ghibaudo, G Mourier, Y Gambetta, N Laurens, F Chroboczek, JA

Citation: P. Llinares et al., Determination of base and emitter resistances in bipolar junction transistors from low frequency noise and static measurements, IEICE TR EL, E82C(4), 1999, pp. 607-611

A new extrapolation law for data-retention time-to-failure of nonvolatile memories

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Candelier, P Reimbold, G

Citation: B. De Salvo et al., A new extrapolation law for data-retention time-to-failure of nonvolatile memories, IEEE ELEC D, 20(5), 1999, pp. 197-199

Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB)

Authors: Ghibaudo, G Riess, P Bruyere, S DeSalvo, B Jahan, C Scarpa, A Pananakakis, G Vincent, E

Citation: G. Ghibaudo et al., Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB), MICROEL ENG, 49(1-2), 1999, pp. 41-50

On the degradation kinetics of thin oxide layers

Authors: Scarpa, A Pananakakis, G Ghibaudo, G Paccagnella, A Ghidini, G

Citation: A. Scarpa et al., On the degradation kinetics of thin oxide layers, SOL ST ELEC, 43(2), 1999, pp. 221-227

Model for the oxide thickness dependence of SILC generation based on anodehole injection process

Authors: Jahan, C Bruyere, S Ghibaudo, G Vincent, E Barla, K

Citation: C. Jahan et al., Model for the oxide thickness dependence of SILC generation based on anodehole injection process, MICROEL REL, 39(6-7), 1999, pp. 791-795

Study of Stress Induced Leakage Current by using high resolution measurements

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Guillaumot, B Reimbold, G

Citation: B. De Salvo et al., Study of Stress Induced Leakage Current by using high resolution measurements, MICROEL REL, 39(6-7), 1999, pp. 797-802

Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism

Authors: Riess, P Ghibaudo, G Pananakakis, G

Citation: P. Riess et al., Modelling of the temperature and electric field dependence of substrate/gate current SILC with an elastic resonant trap assisted tunnelling mechanism, MICROEL REL, 39(6-7), 1999, pp. 803-807

Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides

Authors: Bruyere, S Roy, D Vincent, E Ghibaudo, G

Citation: S. Bruyere et al., Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides, MICROEL REL, 39(6-7), 1999, pp. 815-820

Accelerated dielectric breakdown and wear out standard testing methods andstructures for reliability evaluation of thin oxides

Authors: Ghibaudo, G Pananakakis, G Kies, R Vincent, E Papadas, C

Citation: G. Ghibaudo et al., Accelerated dielectric breakdown and wear out standard testing methods andstructures for reliability evaluation of thin oxides, MICROEL REL, 39(5), 1999, pp. 597-613

On the correlation between SILC and hole fluence throughout the oxide

Authors: Scarpa, A De Salvo, B Ghibaudo, G Pananakakis, G Paccagnella, A Ghidini, G

Citation: A. Scarpa et al., On the correlation between SILC and hole fluence throughout the oxide, MICROEL REL, 39(2), 1999, pp. 197-201

Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides

Authors: Riess, P Ghibaudo, G Pananakakis, G Brini, J

Citation: P. Riess et al., Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides, MICROEL REL, 39(2), 1999, pp. 203-207

Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling

Authors: Bruyere, S Vincent, E Ghibaudo, G

Citation: S. Bruyere et al., Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling, MICROEL REL, 39(2), 1999, pp. 209-214

ONO and NO interpoly dielectric conduction mechanisms

Authors: De Salvo, B Ghibaudo, G Pananakakis, G Reimbold, G

Citation: B. De Salvo et al., ONO and NO interpoly dielectric conduction mechanisms, MICROEL REL, 39(2), 1999, pp. 235-239

Electric field and temperature dependence of the stress induced leakage current: Fowler-Nordheim or Schottky emission?

Authors: Riess, P Ghibaudo, G Pananakakis, G Brini, J Ghidini, G

Citation: P. Riess et al., Electric field and temperature dependence of the stress induced leakage current: Fowler-Nordheim or Schottky emission?, J NON-CRYST, 245, 1999, pp. 48-53

Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm)

Authors: Kamoulakos, G Kelaidis, C Papadas, C Vincent, E Bruyere, S Ghibaudo, G Pananakakis, G Mortini, P Ghidini, G

Citation: G. Kamoulakos et al., Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm), J APPL PHYS, 86(9), 1999, pp. 5131-5140

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