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Results: 1-25/40
Authors:
BJORKETUN LO
HULTMAN L
KORDINA O
SUNDGREN JE
Citation: Lo. Bjorketun et al., TEXTURE EVOLUTION IN SI SIC LAYERED STRUCTURES DEPOSITED ON SI(001) BY CHEMICAL-VAPOR-DEPOSITION/, Journal of materials research, 13(9), 1998, pp. 2632-2642
Authors:
HALLIN C
IVANOV IG
EGILSSON T
HENRY A
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE MATERIAL QUALITY OF CVD-GROWN SIC USING DIFFERENT CARBON PRECURSORS, Journal of crystal growth, 183(1-2), 1998, pp. 163-174
Authors:
HEMMINGSSON C
SON NT
KORDINA O
JANZEN E
LINDSTROM JL
Citation: C. Hemmingsson et al., CAPTURE CROSS-SECTIONS OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN 6H-SIC, Journal of applied physics, 84(2), 1998, pp. 704-708
Authors:
HENRY A
IVANOV IG
EGILSSON T
HALLIN C
ELLISON A
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., HIGH-QUALITY 4H-SIC GROWN ON VARIOUS SUBSTRATE ORIENTATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1289-1292
Authors:
HALLIN C
KONSTANTINOV AO
PECZ B
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE ORIGIN OF 3C POLYTYPE INCLUSIONS IN EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1297-1300
Authors:
ELLISON A
RADAMSON H
TUOMINEN M
MILITA S
HALLIN C
HENRY A
KORDINA O
TUOMI T
YAKIMOVA R
MADAR R
JANZEN E
Citation: A. Ellison et al., WAFER WARPAGE, CRYSTAL BENDING AND INTERFACE PROPERTIES OF 4H-SIC EPI-WAFERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1369-1373
Authors:
SON NT
SORMAN E
SINGH M
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
LINDSTROM JL
JANZEN E
Citation: Nt. Son et al., DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1378-1380
Authors:
SON NT
SORMAN E
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
JANZEN E
Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN 3C SIC EPITAXIAL LAYERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1381-1384
Authors:
ROTTNER KH
SCHONER A
SAVAGE SM
FRISCHHOLZ M
HALLIN C
KORDINA O
JANZEN E
Citation: Kh. Rottner et al., 2.5 KV ION-IMPLANTED P(+)N DIODES IN 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1485-1488
Authors:
JANZEN E
KORDINA O
Citation: E. Janzen et O. Kordina, SIC MATERIAL FOR HIGH-POWER APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 203-209
Authors:
HEMMINGSSON C
SON NT
KORDINA O
JANZEN E
LINDSTROM JL
SAVAGE S
NORDELL N
Citation: C. Hemmingsson et al., CAPACITANCE TRANSIENT STUDIES OF ELECTRON-IRRADIATED 4H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 336-339
Authors:
TOBIAS P
BARANZAHI A
SPETZ AL
KORDINA O
JANZEN E
LUNDSTROM I
Citation: P. Tobias et al., FAST CHEMICAL SENSING WITH METAL-INSULATOR SILICON-CARBIDE STRUCTURES, IEEE electron device letters, 18(6), 1997, pp. 287-289
Authors:
KORDINA O
HALLIN C
HENRY A
BERGMAN JP
IVANOV I
ELLISON A
SON NT
JANZEN E
Citation: O. Kordina et al., GROWTH OF SIC BY HOT-WALL CVD AND HTCVD, Physica status solidi. b, Basic research, 202(1), 1997, pp. 321-334
Authors:
SON NT
SORMAN E
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
JANZEN E
LINDSTROM JL
Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN ELECTRON-IRRADIATED 3C SIC LAYERS, Physical review. B, Condensed matter, 55(5), 1997, pp. 2863-2866
Authors:
BERGMAN JP
KORDINA O
JANZEN E
Citation: Jp. Bergman et al., TIME-RESOLVED SPECTROSCOPY OF DEFECTS IN SIC, Physica status solidi. a, Applied research, 162(1), 1997, pp. 65-77
Authors:
HALLIN C
OWMAN F
MARTENSSON P
ELLISON A
KONSTANTINOV A
KORDINA O
JANZEN E
Citation: C. Hallin et al., IN-SITU SUBSTRATE PREPARATION FOR HIGH-QUALITY SIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 181(3), 1997, pp. 241-253
Authors:
KONSTANTINOV AO
HALLIN C
PECZ B
KORDINA O
JANZEN E
Citation: Ao. Konstantinov et al., THE MECHANISM FOR CUBIC SIC FORMATION ON OFF-ORIENTED SUBSTRATES, Journal of crystal growth, 178(4), 1997, pp. 495-504
Authors:
HEMMINGSSON C
SON NT
KORDINA O
BERGMAN JP
JANZEN E
LINDSTROM JL
SAVAGE S
NORDELL N
Citation: C. Hemmingsson et al., DEEP-LEVEL DEFECTS IN ELECTRON-IRRADIATED 4H SIC EPITAXIAL LAYERS, Journal of applied physics, 81(9), 1997, pp. 6155-6159
Authors:
SON NT
SORMAN E
CHEN WM
BERGMAN JP
HALLIN C
KORDINA O
KONSTANTINOV AO
MONEMAR B
JANZEN E
HOFMANN DM
VOLM D
MEYER BK
Citation: Nt. Son et al., EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC, Journal of applied physics, 81(4), 1997, pp. 1929-1932
Authors:
VOLM D
MEYER BK
HOFMANN DM
CHEN WM
SON NT
PERSSON C
LINDEFELT U
KORDINA O
SORMAN E
KONSTANTINOV AO
MONEMAR B
JANZEN E
Citation: D. Volm et al., DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC, Physical review. B, Condensed matter, 53(23), 1996, pp. 15409-15412
Authors:
HENRY A
HALLIN C
IVANOV IG
BERGMAN JP
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., GA-BOUND EXCITONS IN 3C-SIC, 4H-SIC, AND 6H-SIC, Physical review. B, Condensed matter, 53(20), 1996, pp. 13503-13506
Authors:
IVANOV IG
HALLIN C
HENRY A
KORDINA O
JANZEN E
Citation: Ig. Ivanov et al., NITROGEN DOPING CONCENTRATION AS DETERMINED BY PHOTOLUMINESCENCE IN 4H-SIC AND 6H-SIC, Journal of applied physics, 80(6), 1996, pp. 3504-3508
Authors:
KONSTANTINOV AO
HALLIN C
KORDINA O
JANZEN E
Citation: Ao. Konstantinov et al., EFFECT OF VAPOR COMPOSITION ON POLYTYPE HOMOGENEITY OF EPITAXIAL SILICON-CARBIDE, Journal of applied physics, 80(10), 1996, pp. 5704-5712
Authors:
SON NT
SORMAN E
CHEN WM
SINGH M
HALLIN C
KORDINA O
MONEMAR B
JANZEN E
LINDSTROM JL
Citation: Nt. Son et al., DOMINANT RECOMBINATION CENTER IN ELECTRON-IRRADIATED 3C SIC, Journal of applied physics, 79(7), 1996, pp. 3784-3786
Authors:
KORDINA O
BERGMAN JP
HALLIN C
JANZEN E
Citation: O. Kordina et al., THE MINORITY-CARRIER LIFETIME OF N-TYPE 4H-SIC AND 6H-SIC EPITAXIAL LAYERS, Applied physics letters, 69(5), 1996, pp. 679-681