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Results:
1-25
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Results: 25
Authors:
Zhang, Q
Liou, JJ
McMacken, J
Thomson, J
Layman, P
Citation: Q. Zhang et al., Modeling of mismatch effect in submicron MOSFETs based on BSIM3 model and parametric tests, IEEE ELEC D, 22(3), 2001, pp. 133-135
Authors:
Zhang, Q
Liou, JJ
McMacken, J
Thomson, JR
Stiles, K
Layman, P
Citation: Q. Zhang et al., Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data, SOL ST ELEC, 45(9), 2001, pp. 1537-1547
Authors:
Tan, Y
Liou, JJ
Gessner, J
Schwierz, F
Citation: Y. Tan et al., Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation, SOL ST ELEC, 45(5), 2001, pp. 727-734
Authors:
Schwierz, F
Liou, JJ
Citation: F. Schwierz et Jj. Liou, Semiconductor devices for RF applications: evolution and current status, MICROEL REL, 41(2), 2001, pp. 145-168
Authors:
Liou, JJ
Huang, CI
Citation: Jj. Liou et Ci. Huang, AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability, MICROELEC J, 32(5-6), 2001, pp. 419-431
Authors:
Zhang, Q
Liou, JJ
McMacken, J
Thomson, J
Layman, P
Citation: Q. Zhang et al., Development of robust interconnect model based on design of experiments and multiobjective optimization, IEEE DEVICE, 48(9), 2001, pp. 1885-1891
Authors:
Salcedo, JA
Ortiz-Conde, A
Sanchez, FJG
Muci, J
Liou, JJ
Yue, Y
Citation: Ja. Salcedo et al., New approach for defining the threshold voltage of MOSFETs, IEEE DEVICE, 48(4), 2001, pp. 809-813
Authors:
Zhang, Q
Liou, JJ
McMacken, JR
Thomson, J
Layman, P
Citation: Q. Zhang et al., SPICE modeling and quick estimation of MOSFET mismatch based on BSIM3 model and parametric tests, IEEE J SOLI, 36(10), 2001, pp. 1592-1595
Authors:
Rao, RVVVJ
Chong, TC
Tan, LS
Lau, WS
Liou, JJ
Citation: Rvvvj. Rao et al., A quasianalytical model for LT-GaAs and LT-Al0.3Ga0.7As MISFET devices, MICROW OPT, 27(1), 2000, pp. 61-66
Authors:
Sanchez, FJG
Ortiz-Conde, A
De Mercato, G
Salcedo, JA
Liou, JJ
Yue, Y
Citation: Fjg. Sanchez et al., New simple procedure to determine the threshold voltage of MOSFETs, SOL ST ELEC, 44(4), 2000, pp. 673-675
Authors:
Zhou, W
Liou, JJ
Huang, CI
Citation: W. Zhou et al., A semi-empirical model for the AlGaAs/GaAs HBT long-term current instability, SOL ST ELEC, 44(3), 2000, pp. 541-548
Authors:
Lee, JC
Hoque, A
Croft, GD
Liou, JJ
Young, R
Bernier, JC
Citation: Jc. Lee et al., An electrostatic discharge failure mechanism in semiconductor devices, with applications to electrostatic discharge measurements using transmission line pulsing technique, SOL ST ELEC, 44(10), 2000, pp. 1771-1781
Authors:
Ho, CS
Liou, JJ
Chen, F
Citation: Cs. Ho et al., An analytical MOSFET breakdown model including self-heating effect, SOL ST ELEC, 44(1), 2000, pp. 125-131
Authors:
Sanchez, FJG
Ortiz-Conde, A
Salcedo, JA
Muci, J
Estrada, M
Cerdeira, A
Liou, JJ
Yue, Y
Citation: Fjg. Sanchez et al., Validation of bulk-charge effect parameter extraction in MOSFETs, MICROEL REL, 40(6), 2000, pp. 941-945
Authors:
Cao, XC
McMacken, J
Stiles, K
Layman, P
Liou, JJ
Ortiz-Conde, A
Moinian, S
Citation: Xc. Cao et al., Comparison of the new VBIC and conventional Gummel-Poon bipolar transistormodels, IEEE DEVICE, 47(2), 2000, pp. 427-433
Authors:
Vinson, JE
Liou, JJ
Citation: Je. Vinson et Jj. Liou, Electrostatic discharge in semiconductor devices: Protection techniques, P IEEE, 88(12), 2000, pp. 1878-1900
Authors:
Mantzaris, NV
Liou, JJ
Daoutidis, P
Srienc, F
Citation: Nv. Mantzaris et al., Numerical solution of a mass structured cell population balance model in an environment of changing substrate concentration, J BIOTECH, 71(1-3), 1999, pp. 157-174
Authors:
Sanchez, FJG
Ortiz-Conde, A
Salcedo, JA
Liou, JJ
Yue, Y
Citation: Fjg. Sanchez et al., A procedure for the extraction of the bulk-charge effect parameter in MOSFET models, SOL ST ELEC, 43(7), 1999, pp. 1295-1298
Authors:
Ortiz-Conde, A
Ma, YS
Thomson, J
Santos, E
Liou, JJ
Sanchez, FJG
Lei, M
Finol, J
Layman, P
Citation: A. Ortiz-conde et al., Direct extraction of semiconductor device parameters using lateral optimization method, SOL ST ELEC, 43(4), 1999, pp. 845-848
Authors:
Sanchez, FJG
Ortiz-Conde, A
Liou, JJ
Citation: Fjg. Sanchez et al., On the extraction of the source and drain series resistances of MOSFETs, MICROEL REL, 39(8), 1999, pp. 1173-1184
Authors:
Xiao, G
Lee, J
Liou, JJ
Ortiz-Conde, A
Citation: G. Xiao et al., Incomplete ionization in a semiconductor and its implications to device modeling, MICROEL REL, 39(8), 1999, pp. 1299-1303
Authors:
Lee, JC
Croft, GD
Liou, JJ
Young, WR
Bernier, J
Citation: Jc. Lee et al., Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview, MICROEL REL, 39(5), 1999, pp. 579-593
Authors:
Fantini, F
Liou, JJ
Fukuda, M
Citation: F. Fantini et al., Untitled, MICROEL REL, 39(12), 1999, pp. 1721-1721
Authors:
Rezazadeh, AA
Bashar, SA
Sheng, H
Amin, FA
Khalid, AH
Sotoodeh, M
Crouch, MA
Cattani, L
Fantini, F
Liou, JJ
Citation: Aa. Rezazadeh et al., Reliability investigation of InGaP/GaAs HBTs under current and temperaturestress, MICROEL REL, 39(12), 1999, pp. 1809-1816
Authors:
Ortiz-Conde, A
Liou, JJ
Sanchez, FJG
Fernandes, EG
Castillo, OM
Hassan, MDR
De Mercato, G
Citation: A. Ortiz-conde et al., A new method for extracting the effective channel length of MOSFETs, MICROEL REL, 38(12), 1998, pp. 1867-1870
Risultati:
1-25
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