AAAAAA

   
Results: 1-25 | 26-33
Results: 1-25/33
HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/
Authors: FERLETCAVROIS V MARCANDELLA C MUSSEAU O LERAY JL PELLOIE JL MARTIN F KOLEV S PASQUET D
Citation: V. Ferletcavrois et al., HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/, IEEE electron device letters, 19(7), 1998, pp. 265-267
PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES
Authors: GRUBER O PAILLET P MUSSEAU O MARCANDELLA C ASPAR B AUBERTONHERVE AJ
Citation: O. Gruber et al., PHYSICAL CHARACTERIZATION OF ELECTRON TRAPPING IN UNIBOND(R) OXIDES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1402-1406
IONIZING DOSE HARDNESS ASSURANCE METHODOLOGY FOR QUALIFICATION OF A BICMOS TECHNOLOGY DEDICATED TO HIGH-DOSE LEVEL APPLICATIONS
Authors: FLAMENT O MUSSEAU O LERAY JL DUTISSEUIL E CORBIERE T
Citation: O. Flament et al., IONIZING DOSE HARDNESS ASSURANCE METHODOLOGY FOR QUALIFICATION OF A BICMOS TECHNOLOGY DEDICATED TO HIGH-DOSE LEVEL APPLICATIONS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1420-1424
ELECTRICAL AND OPTICAL-RESPONSE OF A MACH-ZEHNDER ELECTROOPTICAL MODULATOR TO PULSED IRRADIATION
Authors: DHOSE C CASSAN E BAGGIO J MUSSEAU O LERAY JL
Citation: C. Dhose et al., ELECTRICAL AND OPTICAL-RESPONSE OF A MACH-ZEHNDER ELECTROOPTICAL MODULATOR TO PULSED IRRADIATION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1524-1530
ANALYSIS OF SINGLE EVENT EFFECTS AT GRAZING ANGLE
Authors: CAMPBELL AB MUSSEAU O FERLETCAVROIS V STAPOR WJ MCDONALD PT
Citation: Ab. Campbell et al., ANALYSIS OF SINGLE EVENT EFFECTS AT GRAZING ANGLE, IEEE transactions on nuclear science, 45(3), 1998, pp. 1603-1611
RADIATION EFFECTS IN THIN-FILM FERROELECTRIC PZT FOR NONVOLATILE MEMORY APPLICATIONS IN MICROELECTRONICS
Authors: LERAY JL MUSSEAU O PAILLET P AUTRAN JL SODI D COIC YM
Citation: Jl. Leray et al., RADIATION EFFECTS IN THIN-FILM FERROELECTRIC PZT FOR NONVOLATILE MEMORY APPLICATIONS IN MICROELECTRONICS, Journal de physique. III, 7(6), 1997, pp. 1227-1243
RAPID ANNEALING MEASUREMENTS IN FULLY-DEPLETED NMOS SOI/
Authors: GRUBER O FERLETCAVROIS V PAILLET P MUSSEAU O RAYNAUD C PELLOIE JL
Citation: O. Gruber et al., RAPID ANNEALING MEASUREMENTS IN FULLY-DEPLETED NMOS SOI/, Microelectronic engineering, 36(1-4), 1997, pp. 249-252
CHARGE COLLECTION IN SUBMICRON CMOS SOI TECHNOLOGY/
Authors: MUSSEAU O FERLETCAVROIS V CAMPBELL AB KNUDSON AR STAPOR WJ MCDONALD PT PELLOIE JL RAYNAUD C
Citation: O. Musseau et al., CHARGE COLLECTION IN SUBMICRON CMOS SOI TECHNOLOGY/, IEEE transactions on nuclear science, 44(6), 1997, pp. 2124-2133
HEAVY-ION AND PROTON-INDUCED SINGLE EVENT MULTIPLE UPSET
Authors: REED RA CARTS MA MARSHALL PW MARSHALL CJ MUSSEAU O MCNULTY PJ ROTH DR BUCHNER S MELINGER J CORBIERE T
Citation: Ra. Reed et al., HEAVY-ION AND PROTON-INDUCED SINGLE EVENT MULTIPLE UPSET, IEEE transactions on nuclear science, 44(6), 1997, pp. 2224-2229
COMPARISON OF SINGLE EVENT PHENOMENA FOR FRONT BACK IRRADIATIONS/
Authors: MUSSEAU O FERLETCAVROIS V CAMPBELL AB STAPOR WJ MCDONALD PT
Citation: O. Musseau et al., COMPARISON OF SINGLE EVENT PHENOMENA FOR FRONT BACK IRRADIATIONS/, IEEE transactions on nuclear science, 44(6), 1997, pp. 2250-2255
TOTAL-DOSE EFFECTS ON A FULLY-DEPLETED SOI NMOSFET AND ITS LATERAL PARASITIC TRANSISTOR
Authors: FERLETCAVROIS V MUSSEAU O LERAY JL PELLOIE JL RAYNAUD C
Citation: V. Ferletcavrois et al., TOTAL-DOSE EFFECTS ON A FULLY-DEPLETED SOI NMOSFET AND ITS LATERAL PARASITIC TRANSISTOR, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 965-971
2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR
Authors: BRISSET C FERLETCAVROIS V FLAMENT O MUSSEAU O LERAY JL PELLOIE JL ESCOFFIER R MICHEZ A CIRBA C BORDURE G
Citation: C. Brisset et al., 2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR, IEEE transactions on nuclear science, 43(6), 1996, pp. 2651-2658
ANALYSIS OF MULTIPLE BIT UPSETS (MBU) IN A CMOS SRAM
Authors: MUSSEAU O GARDIC F ROCHE P CORBIERE T REED RA BUCHNER S MCDONALD P MELINGER J TRAN L CAMPBELL AB
Citation: O. Musseau et al., ANALYSIS OF MULTIPLE BIT UPSETS (MBU) IN A CMOS SRAM, IEEE transactions on nuclear science, 43(6), 1996, pp. 2879-2888
COMPARISON OF LASER-DIODE RESPONSE TO PULSED ELECTRICAL AND RADIATIVEEXCITATIONS
Authors: BAGGIO J RAINSANT JM DHOSE C LALANDE P MUSSEAU O LERAY JL
Citation: J. Baggio et al., COMPARISON OF LASER-DIODE RESPONSE TO PULSED ELECTRICAL AND RADIATIVEEXCITATIONS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3005-3011
ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS
Authors: FLAMENT O AUTRAN JL ROCHE P LERAY JL MUSSEAU O TRUCHE R ORSIER E
Citation: O. Flament et al., ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3060-3067
DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS
Authors: DENTAN M ABBON P BORGEAUD P DELAGNES E FOURCHES N LACHARTRE D LUGIEZ F PAUL B ROUGER M TRUCHE R BLANC JP LEROUX C DELEVOYEORSIER E PELLOIE JL DEPONTCHARRA J FLAMENT O GUEBHARD JM LERAY JL MONTARON J MUSSEAU O VITEZ A BLANQUART L AUBERT JJ BONZOM V DELPIERRE P HABRARD MC MEKKAOUI A POTHEAU R ARDELEAN J HRISOHO A BRETON D
Citation: M. Dentan et al., DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1763-1767
POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY
Authors: CHABRERIE C MUSSEAU O FLAMENT O LERAY JL BOUDENOT JC SHIPMAN B CALLEWAERT H
Citation: C. Chabrerie et al., POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY, IEEE transactions on nuclear science, 43(3), 1996, pp. 826-830
ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM
Authors: GARDIC F MUSSEAU O FLAMENT O BRISSET C FERLETCAVROIS V MARTINEZ M CORBIERE T
Citation: F. Gardic et al., ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM, IEEE transactions on nuclear science, 43(3), 1996, pp. 899-906
DYNAMIC SINGLE EVENT EFFECTS IN A CMOS THICK SOI SHIFT REGISTER/
Authors: GARDIC F FLAMENT O MUSSEAU O BRISSET C MARTINEZ M BRUNET JP BLANQUART L
Citation: F. Gardic et al., DYNAMIC SINGLE EVENT EFFECTS IN A CMOS THICK SOI SHIFT REGISTER/, IEEE transactions on nuclear science, 43(3), 1996, pp. 960-966
ELECTRICAL AND OPTICAL-RESPONSE OF A LASER-DIODE TO TRANSIENT IONIZING-RADIATION
Authors: BAGGIO J BRISSET C SOMMER JL DHOSE C LALANDE P LERAY JL MUSSEAU O
Citation: J. Baggio et al., ELECTRICAL AND OPTICAL-RESPONSE OF A LASER-DIODE TO TRANSIENT IONIZING-RADIATION, IEEE transactions on nuclear science, 43(3), 1996, pp. 1038-1043
SINGLE-EVENT EFFECTS IN SOI TECHNOLOGIES AND DEVICES
Authors: MUSSEAU O
Citation: O. Musseau, SINGLE-EVENT EFFECTS IN SOI TECHNOLOGIES AND DEVICES, IEEE transactions on nuclear science, 43(2), 1996, pp. 603-613
RADIATION EFFECTS ON SEMICONDUCTOR-MATERI ALS AND COMPONENTS
Authors: GAILLARD R LERAY JL MUSSEAU O LALANDE P
Citation: R. Gaillard et al., RADIATION EFFECTS ON SEMICONDUCTOR-MATERI ALS AND COMPONENTS, Onde electrique, 75(3), 1995, pp. 13-19
CHARGE COLLECTION AND SEU MECHANISMS
Authors: MUSSEAU O
Citation: O. Musseau, CHARGE COLLECTION AND SEU MECHANISMS, Radiation physics and chemistry, 43(1-2), 1994, pp. 151-163
COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES
Authors: FERLETCAVROIS V MUSSEAU O LERAY JL COIC YM LECARVAL G GUICHARD E
Citation: V. Ferletcavrois et al., COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES, IEEE electron device letters, 15(3), 1994, pp. 82-84
COSMIC-RAYS EFFECTS IN MICROELECTRONIC DE VICES
Authors: MUSSEAU O
Citation: O. Musseau, COSMIC-RAYS EFFECTS IN MICROELECTRONIC DE VICES, Onde electrique, 74(1), 1994, pp. 25-30
Risultati: 1-25 | 26-33