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Results: 1-19 |
Results: 19
High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si0.91Ge0.09 films
Authors: Bera, LK Choi, WK Tan, CS Samanta, SK Maiti, CK
Citation: Lk. Bera et al., High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si0.91Ge0.09 films, IEEE ELEC D, 22(8), 2001, pp. 387-389
Effect of post-oxidation annealing on the electrical properties and oxynitride films of deposited oxide on strained-Si0.82Ge0.18 layers
Authors: Samanta, SK Maikap, S Bera, LK Banerjee, HD Maiti, CK
Citation: Sk. Samanta et al., Effect of post-oxidation annealing on the electrical properties and oxynitride films of deposited oxide on strained-Si0.82Ge0.18 layers, SEMIC SCI T, 16(8), 2001, pp. 704-707
Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers
Authors: Maikap, S Ray, SK Banerjee, SK Maiti, CK
Citation: S. Maikap et al., Electrical properties of O-2/NO-plasma grown oxynitride films on partiallystrain compensated Si/Si1-x-yGexCy/Si heterolayers, SEMIC SCI T, 16(3), 2001, pp. 160-163
Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications
Authors: Chatterjee, S Samanta, SK Banerjee, HD Maiti, CK
Citation: S. Chatterjee et al., Metallo-organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications, B MATER SCI, 24(6), 2001, pp. 579-582
Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si
Authors: Bera, LK Senapati, B Maikap, S Maiti, CK
Citation: Lk. Bera et al., Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si, SOL ST ELEC, 45(3), 2001, pp. 379-383
Silicon-germanium materials and devices
Authors: Maiti, CK
Citation: Ck. Maiti, Silicon-germanium materials and devices, SOL ST ELEC, 45(11), 2001, pp. 1867-1868
Performance of SiGe-HBTs and its amplifiers
Authors: Senapati, B Maiti, CK
Citation: B. Senapati et Ck. Maiti, Performance of SiGe-HBTs and its amplifiers, SOL ST ELEC, 45(11), 2001, pp. 1905-1908
N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD
Authors: Tan, CS Choi, WK Bera, LK Pey, KL Antoniadis, DA Fitzgerald, EA Currie, MT Maiti, CK
Citation: Cs. Tan et al., N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD, SOL ST ELEC, 45(11), 2001, pp. 1945-1949
Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers
Authors: Ray, SK Maikap, S Samanta, SK Banerjee, SK Maiti, CK
Citation: Sk. Ray et al., Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers, SOL ST ELEC, 45(11), 2001, pp. 1951-1955
Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma
Authors: Chatterjee, S Samanta, SK Banerjee, HD Maiti, CK
Citation: S. Chatterjee et al., Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma, ELECTR LETT, 37(6), 2001, pp. 390-392
Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures
Authors: Maikap, S Ray, SK John, S Banerjee, SK Maiti, CK
Citation: S. Maikap et al., Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures, SEMIC SCI T, 15(7), 2000, pp. 761-765
Effects of O-2/N2O-plasma treatment on nitride films on strained Si
Authors: Bera, LK Senapati, B Maikap, S Maiti, CK
Citation: Lk. Bera et al., Effects of O-2/N2O-plasma treatment on nitride films on strained Si, SOL ST ELEC, 44(9), 2000, pp. 1533-1536
Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor
Authors: Maikap, S Bera, LK Ray, SK John, S Banerjee, SK Maiti, CK
Citation: S. Maikap et al., Electrical characterization of Si/Si1-xGex/Si quantum well heterostructures using a MOS capacitor, SOL ST ELEC, 44(6), 2000, pp. 1029-1034
Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers
Authors: Senapati, B Samanta, SK Maikap, S Bera, LK Maiti, CK
Citation: B. Senapati et al., Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1-xGex layers, APPL PHYS L, 77(12), 2000, pp. 1840-1842
Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications
Authors: Bera, LK Ray, SK Nayak, DK Usami, N Shiraki, Y Maiti, CK
Citation: Lk. Bera et al., Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications, J ELEC MAT, 28(2), 1999, pp. 98-104
Photoresponse of Si1-xGex heteroepitaxial p-i-n photodiodes
Authors: Chattopadhyay, S Bose, PK Maiti, CK
Citation: S. Chattopadhyay et al., Photoresponse of Si1-xGex heteroepitaxial p-i-n photodiodes, SOL ST ELEC, 43(9), 1999, pp. 1741-1745
NO/O-2/NO plasma-grown oxynitride films on strained-Si1-xGex
Authors: Maikap, S Bera, LK Ray, SK Maiti, CK
Citation: S. Maikap et al., NO/O-2/NO plasma-grown oxynitride films on strained-Si1-xGex, ELECTR LETT, 35(14), 1999, pp. 1202-1203
Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes
Authors: Chattopadhyay, S Bera, LK Maiti, CK Ray, SK Bose, PK Dentel, D Kubler, L Bischoff, JL
Citation: S. Chattopadhyay et al., Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes, J MAT S-M E, 9(6), 1998, pp. 403-407
Extraction of interface state density of Pt/p-strained-Si Schottky diode
Authors: Chattopadhyay, S Bera, LK Ray, SK Bose, PK Maiti, CK
Citation: S. Chattopadhyay et al., Extraction of interface state density of Pt/p-strained-Si Schottky diode, THIN SOL FI, 335(1-2), 1998, pp. 142-145
Risultati: 1-19 |