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Results: 1-25/27
Authors:
Sheridan, DC
Niu, GF
Cressler, JD
Citation: Dc. Sheridan et al., Design of single and multiple zone junction termination extension structures for SiC power devices, SOL ST ELEC, 45(9), 2001, pp. 1659-1664
Authors:
Niu, GF
Juraver, JB
Borgarino, M
Jin, ZR
Cressler, JD
Plana, R
Llopis, O
Mathew, S
Zhang, SM
Clark, S
Joseph, AJ
Citation: Gf. Niu et al., Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGeHBTs, SOL ST ELEC, 45(1), 2001, pp. 107-112
Authors:
Niu, GF
Liang, QQ
Cressler, JD
Webster, CS
Harame, DL
Citation: Gf. Niu et al., RF linearity characteristics of SiGeHBTs, IEEE MICR T, 49(9), 2001, pp. 1558-1565
Authors:
Niu, GF
Cressler, JD
Zhang, SM
Ansley, WE
Webster, CS
Harame, DL
Citation: Gf. Niu et al., A unified approach to RF and microwave noise parameter modeling in bipolartransistors, IEEE DEVICE, 48(11), 2001, pp. 2568-2574
Authors:
Niu, GF
Jin, ZR
Cressler, JD
Rapeta, R
Joseph, AJ
Harame, D
Citation: Gf. Niu et al., Transistor noise in SiGeHBT RF technology, IEEE J SOLI, 36(9), 2001, pp. 1424-1427
Authors:
Jia, XD
Niu, GF
Chen, RMM
Citation: Xd. Jia et al., Switched-current sinusoidal oscillators-single phase and multiphase, ANALOG IN C, 23(1), 2000, pp. 65-76
Authors:
Sheridan, DC
Niu, GF
Merrett, JN
Cressler, JD
Ellis, C
Tin, CC
Citation: Dc. Sheridan et al., Design and fabrication of planar guard ring termination for high-voltage SiC diodes, SOL ST ELEC, 44(8), 2000, pp. 1367-1372
Authors:
Niu, GF
Cressler, JD
Mathew, SJ
Subbanna, S
Citation: Gf. Niu et al., Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect, SOL ST ELEC, 44(8), 2000, pp. 1507-1509
Authors:
Niu, GF
Mathew, SJ
Cressler, JD
Subbanna, S
Citation: Gf. Niu et al., A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1187-1189
Authors:
Shivaram, R
Niu, GF
Cressler, JD
Croke, ET
Citation: R. Shivaram et al., The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes, SOL ST ELEC, 44(3), 2000, pp. 559-563
Authors:
Zhang, G
Cressler, JD
Niu, GF
Pinto, A
Citation: G. Zhang et al., A comparison of npn and pnp profile design tradeoffs for complementary SiGeHBT Technology, SOL ST ELEC, 44(11), 2000, pp. 1949-1954
Authors:
Cressler, JD
Hamilton, MC
Mullinax, GS
Li, Y
Niu, GF
Marshall, CJ
Marshall, PW
Kim, HS
Palmer, MJ
Joseph, AJ
Freeman, G
Citation: Jd. Cressler et al., The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGeHBT BiCMOS technology, IEEE NUCL S, 47(6), 2000, pp. 2515-2520
Authors:
Zhang, SM
Niu, GF
Cressler, JD
Mathew, SJ
Gogineni, U
Clark, SD
Zampardi, P
Pierson, RL
Citation: Sm. Zhang et al., A comparison of the effects of gamma irradiation on SiGeHBT and GaAsHBT technologies, IEEE NUCL S, 47(6), 2000, pp. 2521-2527
Authors:
Niu, GF
Cressler, JD
Shoga, M
Jobe, K
Chu, P
Harame, DL
Citation: Gf. Niu et al., Simulation of SEE-induced charge collection in UHV/CVD SiGeHBTs, IEEE NUCL S, 47(6), 2000, pp. 2682-2689
Authors:
Niu, GF
Cressler, JD
Mathew, SJ
Subbanna, S
Citation: Gf. Niu et al., A channel resistance derivative method for effective channel length extraction in LDD MOSFET's, IEEE DEVICE, 47(3), 2000, pp. 648-650
Authors:
Niu, GF
Zhang, SM
Cressler, JD
Joseph, AJ
Fairbanks, JS
Larson, LE
Webster, CS
Ansley, WE
Harame, DL
Citation: Gf. Niu et al., Noise modeling and SiGe profile design tradeoffs for RF applications, IEEE DEVICE, 47(11), 2000, pp. 2037-2044
Authors:
Mathew, SJ
Niu, GF
Dubbelday, WB
Cressler, JD
Ott, JA
Chu, JO
Mooney, PM
Kavanagh, KL
Meyerson, BS
Lagnado, I
Citation: Sj. Mathew et al., Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire, IEEE ELEC D, 20(4), 1999, pp. 173-175
Authors:
Niu, GF
Cressler, JD
Mathew, SJ
Ahlgren, DC
Citation: Gf. Niu et al., Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI), IEEE ELEC D, 20(10), 1999, pp. 520-522
Authors:
Zhang, SM
Niu, GF
Cressler, JD
Clark, SD
Ahlgren, DC
Citation: Sm. Zhang et al., The effects of proton irradiation on the RF performance of SiGeHBTs, IEEE NUCL S, 46(6), 1999, pp. 1716-1721
Authors:
Niu, GF
Cressler, JD
Mathew, SJ
Subbanna, S
Citation: Gf. Niu et al., A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology, IEEE DEVICE, 46(9), 1999, pp. 1912-1914
Authors:
Niu, GF
Ansley, WE
Zhang, SM
Cressler, JD
Webster, CS
Groves, RA
Citation: Gf. Niu et al., Noise parameter optimization of UHV/CVD SiGeHBT's for RF and microwave applications, IEEE DEVICE, 46(8), 1999, pp. 1589-1598
Authors:
Joseph, AJ
Cressler, JD
Richey, DM
Niu, GF
Citation: Aj. Joseph et al., Optimization of SiGeHBT's for operation at high current densities, IEEE DEVICE, 46(7), 1999, pp. 1347-1354
Authors:
Niu, GF
Cressler, JD
Gogineni, U
Joseph, AJ
Citation: Gf. Niu et al., A new common-emitter hybrid-pi small-signal equivalent circuit for bipolartransistors with significant neutral base recombination, IEEE DEVICE, 46(6), 1999, pp. 1166-1173
Authors:
Niu, GF
Cressler, JD
Zhang, SM
Gogineni, U
Ahlgren, DC
Citation: Gf. Niu et al., Measurement of collector-base junction avalanche multiplication effects inadvanced UHV/CVD SiGe HBT's, IEEE DEVICE, 46(5), 1999, pp. 1007-1015
Authors:
Mathew, SJ
Niu, GF
Dubbelday, WB
Cressler, JD
Citation: Sj. Mathew et al., Characterization and profile optimization of SiGe pFET's on silicon-on-sapphire, IEEE DEVICE, 46(12), 1999, pp. 2323-2332