Citation: Jd. Plummer et Jk. Edzwald, EFFECT OF OZONE ON DISINFECTION BY-PRODUCT FORMATION OF ALGAE, Water science and technology, 37(2), 1998, pp. 49-55
Authors:
SEGAL JD
PATT BE
IWANCZYK JS
VILKELIS G
PLUMMER JD
HEDMAN B
HODGSON KO
Citation: Jd. Segal et al., A NEW STRUCTURE FOR CONTROLLING DARK CURRENT DUE TO SURFACE GENERATION IN DRIFT DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 414(2-3), 1998, pp. 307-316
Citation: Pm. Rousseau et al., ARSENIC DEACTIVATION ENHANCED DIFFUSION - A TIME, TEMPERATURE, AND CONCENTRATION STUDY, Journal of applied physics, 84(7), 1998, pp. 3593-3601
Citation: Cp. Auth et Jd. Plummer, A SIMPLE-MODEL FOR THRESHOLD VOLTAGE OF SURROUNDING-GATE MOSFETS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2381-2383
Citation: Yk. Leung et al., LATERAL IGBT IN THIN SOI FOR HIGH-VOLTAGE, HIGH-SPEED POWER IC, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2251-2254
Citation: A. Ural et al., EXPERIMENTAL-EVIDENCE FOR A DUAL VACANCY INTERSTITIAL MECHANISM OF SELF-DIFFUSION IN SILICON, Applied physics letters, 73(12), 1998, pp. 1706-1708
Citation: Mv. Kumar et al., A TEST STRUCTURE ADVISER AND A COUPLED, LIBRARY-BASED TEST STRUCTURE LAYOUT AND TESTING ENVIRONMENT, IEEE transactions on semiconductor manufacturing, 10(3), 1997, pp. 370-383
Citation: Pm. Rousseau et al., ARSENIC DEACTIVATION ENHANCED DIFFUSION AND THE REVERSE SHORT-CHANNELEFFECT, IEEE electron device letters, 18(2), 1997, pp. 42-44
Citation: Cp. Auth et Jd. Plummer, SCALING THEORY FOR CYLINDRICAL, FULLY-DEPLETED, SURROUNDING-GATE MOSFETS, IEEE electron device letters, 18(2), 1997, pp. 74-76
Authors:
LEUNG YK
KUEHNE SC
HUANG VSK
NGUYEN CT
PAUL AK
PLUMMER JD
WONG SS
Citation: Yk. Leung et al., SPATIAL TEMPERATURE PROFILES DUE TO NONUNIFORM SELF-HEATING IN LDMOSSIN THIN SOI, IEEE electron device letters, 18(1), 1997, pp. 13-15
Citation: Ba. Biegel et Jd. Plummer, APPLIED BIAS SLEWING IN TRANSIENT WIGNER FUNCTION SIMULATION OF RESONANT-TUNNELING DIODES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 733-737
Authors:
MASSENGALE AR
UEDA T
HARRIS JS
TAI CY
DEAL MD
PLUMMER JD
FERNANDEZ R
Citation: Ar. Massengale et al., LOCALIZED IMPURITY-INDUCED LAYER DISORDERING FOR LITHOGRAPHIC CONTROLOF THE LATERAL OXIDATION OF ALAS, Electronics Letters, 33(12), 1997, pp. 1087-1089
Citation: J. Secker et al., DWARF GALAXIES IN THE COMA CLUSTER - II - PHOTOMETRY AND ANALYSIS, Publications of the Astronomical Society of the Pacific, 109(742), 1997, pp. 1377-1393
Citation: Ba. Biegel et Jd. Plummer, COMPARISON OF SELF-CONSISTENCY ITERATION OPTIONS FOR THE WIGNER FUNCTION-METHOD OF QUANTUM DEVICE SIMULATION, Physical review. B, Condensed matter, 54(11), 1996, pp. 8070-8082
Citation: Hs. Chao et al., SPECIES AND DOSE DEPENDENCE OF ION-IMPLANTATION DAMAGE-INDUCED TRANSIENT ENHANCED DIFFUSION, Journal of applied physics, 79(5), 1996, pp. 2352-2363
Citation: Pm. Rousseau et al., ENHANCED DIFFUSION BY ELECTRICAL DEACTIVATION OF ARSENIC AND ITS IMPLICATIONS FOR BIPOLAR-DEVICES, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 547-553
Authors:
ROUSSEAU PM
GRIFFIN PB
LUNING S
PLUMMER JD
Citation: Pm. Rousseau et al., A MODEL FOR MOBILITY DEGRADATION IN HIGHLY DOPED ARSENIC LAYERS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2025-2027
Citation: Da. Hunter et Jd. Plummer, SEXTANS-A - A CASE-STUDY OF STAR-FORMATION AND GAS DENSITIES IN IRREGULAR GALAXIES, The Astrophysical journal, 462(2), 1996, pp. 732-739
Citation: Hs. Chao et al., THE DOSE, ENERGY, AND TIME-DEPENDENCE OF SILICON SELF-IMPLANTATION INDUCED TRANSIENT ENHANCED DIFFUSION AT 750-DEGREES-C, Applied physics letters, 69(14), 1996, pp. 2113-2115
Citation: Tt. Fang et al., CALCULATION OF THE FRACTIONAL INTERSTITIAL COMPONENT OF BORON-DIFFUSION AND SEGREGATION COEFFICIENT OF BORON IN SI0.8GE0.2, Applied physics letters, 68(6), 1996, pp. 791-793
Citation: Hs. Chao et al., INFLUENCE OF DISLOCATION LOOPS CREATED BY AMORPHIZING IMPLANTS ON POINT-DEFECT AND BORON-DIFFUSION IN SILICON, Applied physics letters, 68(25), 1996, pp. 3570-3572
Citation: Wtc. Fang et al., SURFACE AND BULK POINT-DEFECT GENERATION IN CZOCHRALSKI AND FLOAT-ZONE TYPE SILICON-WAFERS, Applied physics letters, 68(15), 1996, pp. 2085-2087