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Results: 1-25/84
Authors:
ALAWNEH I
SIMOEN E
BIESEMANS S
DEMEYER K
CLAEYS C
Citation: I. Alawneh et al., COMPARISON OF THE FREEZE-OUT EFFECT IN IN AND B-DOPED N-MOSFETS IN THE RANGE 4.2-300 K, Journal de physique. IV, 8(P3), 1998, pp. 3-8
Authors:
NICOLETT AS
MARTINO JA
SIMOEN E
CLAEYS C
Citation: As. Nicolett et al., BACK GATE VOLTAGE AND BURIED-OXIDE THICKNESS INFLUENCES ON THE SERIESRESISTANCE OF FULLY DEPLETED SOI MOSFETS AT 77 K, Journal de physique. IV, 8(P3), 1998, pp. 25-28
Authors:
GUTIERREZ EA
CLAEYS C
SIMOEN E
KOSHEVAYA SV
Citation: Ea. Gutierrez et al., PERSPECTIVES OF THE CRYO-ELECTRONICS FOR THE YEAR 2000, Journal de physique. IV, 8(P3), 1998, pp. 315-320
Authors:
VANMEER H
VALENZA M
VANDERZANDEN K
DERAEDT W
SIMOEN E
SCHREURS D
KAUFMANN L
Citation: H. Vanmeer et al., EFFECT OF SCHOTTKY-BARRIER ALTERATION ON THE LOW-FREQUENCY NOISE OF INP-BASED HEMTS, IEEE electron device letters, 19(10), 1998, pp. 370-372
Authors:
SIMOEN E
DECOUTERE S
CLAEYS C
DEFERM L
Citation: E. Simoen et al., A GLOBAL DESCRIPTION OF THE BASE CURRENT 1 F NOISE OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS BEFORE AND AFTER HOT-CARRIER STRESS/, Solid-state electronics, 42(9), 1998, pp. 1679-1687
Authors:
LUKYANCHIKOVA N
PETRICHUK M
GARBAR N
SIMOEN E
CLAEYS C
Citation: N. Lukyanchikova et al., RTS NOISE DUE TO LATERAL ISOLATION RELATED DEFECTS IN SUBMICRON NMOSFETS, Microelectronics and reliability, 38(10), 1998, pp. 1561-1568
Authors:
VASINA P
SIMOEN E
CLAEYS C
Citation: P. Vasina et al., A LOW-FREQUENCY NOISE STUDY OF HOT-CARRIER STRESSING EFFECTS IN SUBMICRON SI P-MOSFETS, Microelectronics and reliability, 38(1), 1998, pp. 23-27
Authors:
SIMOEN E
CLAEYS C
OHYAMA H
Citation: E. Simoen et al., FACTORS DETERMINING THE DAMAGE COEFFICIENTS AND THE LOW-FREQUENCY NOISE IN MEV PROTON-IRRADIATED SILICON DIODES, IEEE transactions on nuclear science, 45(1), 1998, pp. 89-97
Authors:
VANMEER H
SIMOEN E
VALENZA M
VANDERZANDEN K
DERAEDT W
Citation: H. Vanmeer et al., LOW-FREQUENCY DRAIN CURRENT NOISE BEHAVIOR OF INP BASED MODFETS IN THE LINEAR AND SATURATION REGIME, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2475-2482
Authors:
HOU FC
BOSMAN G
SIMOEN E
VANHELLEMONT J
CLAEYS C
Citation: Fc. Hou et al., BULK DEFECT-INDUCED LOW-FREQUENCY NOISE IN N(-P SILICON DIODES()), I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2528-2536
Authors:
CLAEYS C
SIMOEN E
Citation: C. Claeys et E. Simoen, NOISE AS A DIAGNOSTIC-TOOL FOR SEMICONDUCTOR MATERIAL AND DEVICE CHARACTERIZATION, Journal of the Electrochemical Society, 145(6), 1998, pp. 2058-2067
Authors:
CZERWINSKI A
SIMOEN E
CLAEYS C
KLIMA K
TOMASZEWSKI D
GIBKI J
KATCKI J
Citation: A. Czerwinski et al., OPTIMIZED DIODE ANALYSIS OF ELECTRICAL SILICON SUBSTRATE PROPERTIES, Journal of the Electrochemical Society, 145(6), 1998, pp. 2107-2112
Authors:
LUKYANCHIKOVA NB
PETRICHUK MV
GARBAR NP
SIMOEN E
CLAEYS A
Citation: Nb. Lukyanchikova et al., IMPACT OF THE FREE-ELECTRON DISTRIBUTION ON THE RANDOM TELEGRAPH SIGNAL CAPTURE KINETICS IN SUBMICRON N-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Applied physics letters, 73(17), 1998, pp. 2444-2446
Authors:
SIMOEN E
CLAEYS C
CZERWINSKI A
KATCKI J
Citation: E. Simoen et al., ACCURATE EXTRACTION OF THE DIFFUSION CURRENT IN SILICON P-N-JUNCTION DIODES, Applied physics letters, 72(9), 1998, pp. 1054-1056
Authors:
CZERWINSKI A
SIMOEN E
CLAEYS C
Citation: A. Czerwinski et al., P-N-JUNCTION PERIPHERAL CURRENT ANALYSIS USING GATED DIODE MEASUREMENTS, Applied physics letters, 72(26), 1998, pp. 3503-3505
Authors:
VANHELLEMONT J
MILITA S
SERVIDORI M
HIGGS V
KISSINGER G
GRAMENOVA E
SIMOEN E
JANSEN P
Citation: J. Vanhellemont et al., NONDESTRUCTIVE TECHNIQUES FOR IDENTIFICATION AND CONTROL OF PROCESSING INDUCED EXTENDED DEFECTS IN SILICON AND CORRELATION WITH DEVICE YIELD, Journal de physique. III, 7(7), 1997, pp. 1425-1433
Authors:
CLAEYS C
SIMOEN E
VANHELLEMONT J
Citation: C. Claeys et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF OXYGEN-PRECIPITATION INDUCED EXTENDED DEFECTS IN SILICON, Journal de physique. III, 7(7), 1997, pp. 1469-1486
Authors:
SIMOEN E
VANHELLEMONT J
ALAERTS A
CLAEYS C
GAUBAS E
KANIAVA A
OHYAMA H
SUNAGA H
NAHSIYAMA I
SKORUPA W
Citation: E. Simoen et al., PROTON IRRADIATION EFFECTS IN SILICON JUNCTION DIODES AND CHARGE-COUPLED-DEVICES, Radiation physics and chemistry, 50(5), 1997, pp. 417-422
Authors:
SIMOEN E
VASINA P
SIKULA J
CLAEYS C
Citation: E. Simoen et al., EMPIRICAL-MODEL FOR THE LOW-FREQUENCY NOISE OF HOT-CARRIER DEGRADED SUBMICRON LDD MOSFETS, IEEE electron device letters, 18(10), 1997, pp. 480-482
Authors:
GAUBAS E
VANHELLEMONT J
SIMOEN E
CLAUWS P
KRANER HW
VILKELIS G
SMILGA AP
Citation: E. Gaubas et al., STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS, Semiconductor science and technology, 12(9), 1997, pp. 1092-1099
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, IMPACT OF THE SERIES RESISTANCE ON THE PARAMETER EXTRACTION OF SUBMICRON SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS OPERATED AT 77 K, Solid-state electronics, 41(4), 1997, pp. 659-661
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, HOT-CARRIER STRESS EFFECTS ON THE AMPLITUDE OF RANDOM TELEGRAPH SIGNALS IN SMALL-AREA SI P-MOSFETS, Microelectronics and reliability, 37(7), 1997, pp. 1015-1019
Authors:
LUKYANCHIKOVA P
PETRICHUK MV
GARBAR N
SIMOEN E
CLAEYS C
Citation: P. Lukyanchikova et al., IDENTIFICATION OF ISOLATION-EDGE RELATED RANDOM TELEGRAPH SIGNALS IN SUBMICRON SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Applied physics letters, 71(26), 1997, pp. 3874-3876
Authors:
CLAEYS C
SIMOEN E
Citation: C. Claeys et E. Simoen, PROCEEDINGS OF THE 2ND EUROPEAN WORKSHOP ON LOW-TEMPERATURE ELECTRONICS JUNE 26-28, 1996 LEUVEN, BELGIUM - PREFACE, Journal de physique. IV, 6(C3), 1996, pp. 4-5
Authors:
SIMOEN E
CLAEYS C
MARTINO JA
Citation: E. Simoen et al., PARAMETER EXTRACTION OF MOSFETS OPERATED AT LOW-TEMPERATURE, Journal de physique. IV, 6(C3), 1996, pp. 29-42