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Results: 26-50/56
Authors:
Nicolett, AS
Martino, JA
Simoen, E
Claeys, C
Citation: As. Nicolett et al., Extraction of the lightly doped drain concentration of fully depleted SOINMOSFETs using the back gate bias effect, SOL ST ELEC, 44(4), 2000, pp. 677-684
Authors:
Nicolett, AS
Martino, JA
Simoen, E
Claeys, C
Citation: As. Nicolett et al., Simultaneous extraction of the silicon film and front oxide thicknesses onfully depleted SOI nMOSFETs, SOL ST ELEC, 44(11), 2000, pp. 1961-1969
Authors:
Claeys, C
Simoen, E
Citation: C. Claeys et E. Simoen, Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies, MICROEL REL, 40(11), 2000, pp. 1815-1821
Authors:
Czerwinski, A
Simoen, E
Poyai, A
Claeys, C
Citation: A. Czerwinski et al., Peripheral current analysis of silicon p-n junction and gated diodes, J APPL PHYS, 88(11), 2000, pp. 6506-6514
Authors:
Ohyama, H
Yajima, K
Simoen, E
Katoh, T
Claeys, C
Takami, Y
Kobayashi, K
Yoneoka, M
Nakabayashi, M
Hakata, T
Takizawa, H
Citation: H. Ohyama et al., Impact of 20-MeV alpha-ray irradiation on the V-band performance of AlGaAspseudomorphic HEMTs, IEEE NUCL S, 47(6), 2000, pp. 2546-2550
Authors:
Neimash, VB
Kraitchinskii, A
Kras'ko, M
Puzenko, O
Claeys, C
Simoen, E
Svensson, B
Kuznetsov, A
Citation: Vb. Neimash et al., Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 degrees C, J ELCHEM SO, 147(7), 2000, pp. 2727-2733
Authors:
Simoen, E
Claeys, C
Neimash, VB
Kraitchinskii, A
Krasko, N
Puzenko, O
Blondeel, A
Clauws, P
Citation: E. Simoen et al., Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon, APPL PHYS L, 76(20), 2000, pp. 2838-2840
Authors:
Hauser, P
Simoen, E
Capiau, C
Comberbach, M
Desmons, P
Veenstra, S
Slaoui, M
Citation: P. Hauser et al., Evaluation of protection conferred by several acellular pertussis vaccinesin an intranasal model of B-pertussis infection, BIOLOGICALS, 27(2), 1999, pp. 163-163
Authors:
Ohyama, H
Hayama, K
Hakata, T
Simoen, E
Claeys, C
Poortmans, J
Caymax, M
Takami, Y
Sunaga, H
Citation: H. Ohyama et al., Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes, J MAT S-M E, 10(5-6), 1999, pp. 335-337
Authors:
Ohyam, H
Kudou, T
Simoen, E
Claeys, C
Takami, Y
Sunaga, H
Citation: H. Ohyam et al., Radiation damage of In0.53Ga0.47As photodiodes by high energy particles, J MAT S-M E, 10(5-6), 1999, pp. 403-405
Authors:
Ohyama, H
Simoen, E
Claeys, C
Hakata, T
Kudou, T
Yoneoka, M
Kobayashi, K
Nakabayashi, M
Takami, Y
Sunaga, H
Citation: H. Ohyama et al., Radiation-induced lattice defects in InGaAsP laser diodes and their effects on device performance, PHYSICA B, 274, 1999, pp. 1031-1033
Authors:
Hakata, T
Ohyama, H
Kuroda, S
Simoen, E
Claeys, C
Kudou, T
Kobayashi, K
Nakabayashi, M
Yoncoka, M
Takami, Y
Sunaga, H
Miyahara, K
Citation: T. Hakata et al., Impact of induced lattice defects on performance degradation of AlGaAs/GaAs p-HEMTs, PHYSICA B, 274, 1999, pp. 1034-1036
Authors:
Hakata, T
Ohyama, H
Kobayashi, K
Simoen, E
Claeys, C
Takami, Y
Sunaga, H
Miyahara, K
Citation: T. Hakata et al., Radiation effect on metal-contaminated Si diodes, J KOR PHYS, 35, 1999, pp. S84-S87
Authors:
Ohyama, I
Hakata, T
Simoen, E
Claeys, C
Kuroda, S
Takami, Y
Sunaga, H
Citation: I. Ohyama et al., Radiation damage in InGaP/InGaAs p-HEMTs by 20-MeV alpha rays, J KOR PHYS, 35, 1999, pp. S272-S274
Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, NP
Simoen, E
Claeys, C
Citation: Nb. Lukyanchikova et al., Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface, SEMIC SCI T, 14(9), 1999, pp. 775-783
Authors:
Simoen, E
Claeys, C
Citation: E. Simoen et C. Claeys, Reliability aspects of the low-frequency noise behaviour of submicron CMOStechnologies, SEMIC SCI T, 14(8), 1999, pp. R61-R71
Authors:
Ohyama, H
Simoen, E
Claeys, C
Vanhellemont, J
Hayama, K
Tokuyama, J
Takami, Y
Sunaga, H
Poortmans, J
Caymax, M
Citation: H. Ohyama et al., Radiation damage in Si1-xGex heteroepitaxial devices, J RAD NUCL, 239(2), 1999, pp. 351-355
Authors:
Hakata, T
Ohyama, H
Simoen, E
Claeys, C
Miyahara, K
Kawamura, K
Ogita, Y
Takami, Y
Citation: T. Hakata et al., Degradation of MOSFETs on SIMOX by irradiation, J RAD NUCL, 239(2), 1999, pp. 357-360
Authors:
Kudou, T
Ohyama, H
Simoen, E
Claeys, C
Vanhellemont, J
Sigaki, K
Takami, Y
Fujii, A
Citation: T. Kudou et al., Effect of irradiation in InGaAs photo devices, J RAD NUCL, 239(2), 1999, pp. 361-364
Authors:
Simoen, E
Claeys, C
Ohyama, H
Takami, Y
Sunaga, H
Citation: E. Simoen et al., Factors determining the lifetime damage coefficients and the low-frequencynoise in MeV proton irradiated silicon diodes, J RAD NUCL, 239(1), 1999, pp. 207-211
Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, NP
Simoen, E
Claeys, C
Citation: Nb. Lukyanchikova et al., RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions, MICROEL ENG, 48(1-4), 1999, pp. 185-188
Authors:
Simoen, E
van Meer, H
Valenza, M
van der Zanden, K
De Raedt, W
Citation: E. Simoen et al., Low-frequency gate current noise of InP based HEMTs, SOL ST ELEC, 43(9), 1999, pp. 1797-1800
Authors:
Simoen, E
Claeys, C
Citation: E. Simoen et C. Claeys, On the flicker noise in submicron silicon MOSFETs, SOL ST ELEC, 43(5), 1999, pp. 865-882
Authors:
Simoen, E
Claeys, CL
Citation: E. Simoen et Cl. Claeys, On the geometry dependence of the 1/f noise in CMOS compatible junction diodes, IEEE DEVICE, 46(8), 1999, pp. 1725-1732
Authors:
Simoen, E
Claeys, C
Citation: E. Simoen et C. Claeys, On the impact of the capture rates on the generation recombination lifetime ratio of a single deep level, IEEE DEVICE, 46(7), 1999, pp. 1487-1488