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Results: 1-18 |
Results: 18
ULTRAMINIATURE SILICON CAPACITIVE PRESSURE-SENSING ELEMENTS OBTAINED BY SILICON FUSION BONDING
Authors: GOUSTOURIDIS D NORMAND P TSOUKALAS D
Citation: D. Goustouridis et al., ULTRAMINIATURE SILICON CAPACITIVE PRESSURE-SENSING ELEMENTS OBTAINED BY SILICON FUSION BONDING, Sensors and actuators. A, Physical, 68(1-3), 1998, pp. 269-274
MINIATURIZATION OF SI DIAPHRAGMS OBTAINED BY WAFER BONDING
Authors: GOUSTOURIDIS D NORMAND P TSOUKALAS D
Citation: D. Goustouridis et al., MINIATURIZATION OF SI DIAPHRAGMS OBTAINED BY WAFER BONDING, Microelectronic engineering, 42, 1998, pp. 437-440
FABRICATION OF SI NANODEVICES BY OPTICAL LITHOGRAPHY AND ANISOTROPIC ETCHING
Authors: TSOUKALAS D NORMAND P AIDINIS C KAPETANAKIS E ARGITIS P
Citation: D. Tsoukalas et al., FABRICATION OF SI NANODEVICES BY OPTICAL LITHOGRAPHY AND ANISOTROPIC ETCHING, Microelectronic engineering, 42, 1998, pp. 523-526
FABRICATION OF SI NANO-WIRES USING ANISOTROPIC DRY AND WET ETCHING
Authors: NORMAND P TSOUKALAS D AIDINIS C TSEREPI A KOUVATSOS D KAPETANAKIS E
Citation: P. Normand et al., FABRICATION OF SI NANO-WIRES USING ANISOTROPIC DRY AND WET ETCHING, Microelectronic engineering, 42, 1998, pp. 551-554
ELECTRICAL CHARACTERIZATION OF SILICON-WAFER BONDING STRUCTURES
Authors: DIMITRAKIS P HATZANDROULIS S TSOUKALAS D STOIMENOS J PAPAIOANNOU GJ
Citation: P. Dimitrakis et al., ELECTRICAL CHARACTERIZATION OF SILICON-WAFER BONDING STRUCTURES, Solid-state electronics, 42(2), 1998, pp. 201-204
A SOLID-STATE PRESSURE-SENSING MICROSYSTEM FOR BIOMEDICAL APPLICATIONS
Authors: CHATZANDROULIS S GOUSTOURIDIS D NORMAND P TSOUKALAS D
Citation: S. Chatzandroulis et al., A SOLID-STATE PRESSURE-SENSING MICROSYSTEM FOR BIOMEDICAL APPLICATIONS, Sensors and actuators. A, Physical, 62(1-3), 1997, pp. 551-555
REDUCTION OF THE REVERSE SHORT-CHANNEL EFFECT IN THICK SOI MOSFETS
Authors: TSOUKALAS D TSAMIS C KOUVATSOS DN REVVA P TSOI E
Citation: D. Tsoukalas et al., REDUCTION OF THE REVERSE SHORT-CHANNEL EFFECT IN THICK SOI MOSFETS, IEEE electron device letters, 18(3), 1997, pp. 90-92
SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION)
Authors: NORMAND P TSOUKALAS D KAPETANAKIS E VANDENBERG JA ARMOUR DG STOEMENOS J
Citation: P. Normand et al., SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION), Microelectronic engineering, 36(1-4), 1997, pp. 79-82
LOW BIT-RATE SPEECH CODING BY PERCEPTUALLY OPTIMIZED NOISE EXCITATIONMODULATION
Authors: TSOUKALAS D MOURJOPOULOS J KOKKINAKIS G
Citation: D. Tsoukalas et al., LOW BIT-RATE SPEECH CODING BY PERCEPTUALLY OPTIMIZED NOISE EXCITATIONMODULATION, Signal processing, 56(1), 1997, pp. 77-89
A MINIATURE SELF-ALIGNED PRESSURE SENSING ELEMENT
Authors: GOUSTOURIDIS D CHATZANDROULIS S NORMAND P TSOUKALAS D
Citation: D. Goustouridis et al., A MINIATURE SELF-ALIGNED PRESSURE SENSING ELEMENT, Journal of micromechanics and microengineering, 6(1), 1996, pp. 33-35
SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES
Authors: KOUVATSOS DN TSOUKALAS D SARCONA GT HATALIS MK STOEMENOS J
Citation: Dn. Kouvatsos et al., SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES, Electronics Letters, 32(8), 1996, pp. 775-777
INFLUENCE OF N2O OXIDATION OF SILICON ON POINT-DEFECT INJECTION KINETICS IN THE HIGH-TEMPERATURE REGIME
Authors: TSAMIS C KOUVATSOS DN TSOUKALAS D
Citation: C. Tsamis et al., INFLUENCE OF N2O OXIDATION OF SILICON ON POINT-DEFECT INJECTION KINETICS IN THE HIGH-TEMPERATURE REGIME, Applied physics letters, 69(18), 1996, pp. 2725-2727
SILICON INTERSTITIAL TRAPPING IN POLYCRYSTALLINE SILICON FILMS STUDIED BY MONITORING INTERSTITIAL REACTIONS WITH UNDERLYING INSULATING FILMS
Authors: TSOUKALAS D KOUVATSOS D
Citation: D. Tsoukalas et D. Kouvatsos, SILICON INTERSTITIAL TRAPPING IN POLYCRYSTALLINE SILICON FILMS STUDIED BY MONITORING INTERSTITIAL REACTIONS WITH UNDERLYING INSULATING FILMS, Applied physics letters, 68(11), 1996, pp. 1549-1551
DECREASE OF THE LATERAL DISTRIBUTION OF INTERSTITIALS IN SILICON-ON-INSULATOR STRUCTURES
Authors: TSAMIS C TSOUKALAS D NORMAND P
Citation: C. Tsamis et al., DECREASE OF THE LATERAL DISTRIBUTION OF INTERSTITIALS IN SILICON-ON-INSULATOR STRUCTURES, Microelectronic engineering, 28(1-4), 1995, pp. 463-466
ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF WAFER BONDED NON-ANNEALED SIMOX
Authors: TSOUKALAS D DIMITRAKIS P STOEMENOS J PAPAIOANNOU G
Citation: D. Tsoukalas et al., ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF WAFER BONDED NON-ANNEALED SIMOX, Microelectronic engineering, 28(1-4), 1995, pp. 471-474
INVESTIGATION OF THE DISTRIBUTION OF SILICON INTERSTITIALS IN SILICONAND SILICON-ON-INSULATOR STRUCTURES AFTER THERMAL-OXIDATION
Authors: TSOUKALAS D TSAMIS C
Citation: D. Tsoukalas et C. Tsamis, INVESTIGATION OF THE DISTRIBUTION OF SILICON INTERSTITIALS IN SILICONAND SILICON-ON-INSULATOR STRUCTURES AFTER THERMAL-OXIDATION, Applied physics letters, 66(8), 1995, pp. 971-973
SILICON INTERSTITIAL REACTIONS WITH THERMALLY GROWN SILICON DIOXIDE
Authors: TSAMIS C TSOUKALAS D GUILLEMOT N
Citation: C. Tsamis et al., SILICON INTERSTITIAL REACTIONS WITH THERMALLY GROWN SILICON DIOXIDE, Microelectronic engineering, 22(1-4), 1993, pp. 363-366
INVESTIGATION OF SILICON INTERSTITIAL REACTIONS WITH INSULATING FILMSUSING THE SILICON-WAFER BONDING TECHNIQUE
Authors: TSOUKALAS D TSAMIS C STOEMENOS J
Citation: D. Tsoukalas et al., INVESTIGATION OF SILICON INTERSTITIAL REACTIONS WITH INSULATING FILMSUSING THE SILICON-WAFER BONDING TECHNIQUE, Applied physics letters, 63(23), 1993, pp. 3167-3169
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