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Results: 1-25/36
Authors:
Buyanova, IA
Chen, WM
Pozina, G
Hai, PN
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Optical properties of GaNAs/GaAs structures, MAT SCI E B, 82(1-3), 2001, pp. 143-147
Authors:
Hai, PN
Chen, WM
Buyanova, IA
Monemar, B
Xin, HP
Tu, CW
Citation: Pn. Hai et al., Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance, MAT SCI E B, 82(1-3), 2001, pp. 218-220
Authors:
Zhang, Y
Francoeur, S
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap, PHYS ST S-B, 228(1), 2001, pp. 287-291
Authors:
Shan, W
Walukiewicz, W
Yu, KM
Ager, JW
Haller, EE
Geisz, JF
Friedman, DJ
Olson, JM
Kurtz, SR
Xin, HP
Tu, CW
Citation: W. Shan et al., Band anticrossing in III-N-V alloys, PHYS ST S-B, 223(1), 2001, pp. 75-85
Authors:
Wu, J
Shan, W
Walukiewicz, W
Yu, KM
Ager, JW
Haller, EE
Xin, HP
Tu, CW
Citation: J. Wu et al., Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells - art. no. 085320, PHYS REV B, 6408(8), 2001, pp. 5320
Authors:
Zhang, Y
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Scaling of band-gap reduction in heavily nitrogen doped GaAs - art. no. 161303, PHYS REV B, 6316(16), 2001, pp. 1303
Authors:
Zhang, Y
Mascarenhas, A
Geisz, JF
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs1-xNx - art. no. 085205, PHYS REV B, 6308(8), 2001, pp. 5205
Authors:
Thinh, NQ
Buyanova, IA
Hai, PN
Chen, WM
Xin, HP
Tu, CW
Citation: Nq. Thinh et al., Signature of an intrinsic point defect in GaNxAs1-x - art. no. 033203, PHYS REV B, 6303(3), 2001, pp. 3203
Authors:
Buyanova, IA
Pozina, G
Hai, PN
Chen, WM
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Type I band alignment in the GaNxAs1-x/GaAs quantum wells - art. no. 033303, PHYS REV B, 6303(3), 2001, pp. 3303
Authors:
Xin, HP
Welty, RJ
Hong, YG
Tu, CW
Citation: Hp. Xin et al., Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes, J CRYST GR, 227, 2001, pp. 558-561
Authors:
Yu, KM
Walukiewicz, W
Wu, J
Beeman, JW
Ager, JW
Haller, EE
Shan, W
Xin, HP
Tu, CW
Ridgway, MC
Citation: Km. Yu et al., Formation of diluted III-V nitride thin films by N ion implantation, J APPL PHYS, 90(5), 2001, pp. 2227-2234
Authors:
Thinh, NQ
Buyanova, IA
Chen, WM
Xin, HP
Tu, CW
Citation: Nq. Thinh et al., Formation of nonradiative defects in molecular beam epitaxial GaNxAs1-x studied by optically detected magnetic resonance, APPL PHYS L, 79(19), 2001, pp. 3089-3091
Authors:
Yu, KM
Walukiewicz, W
Wu, J
Beeman, JW
Ager, JW
Haller, EE
Shan, W
Xin, HP
Tu, CW
Citation: Km. Yu et al., Synthesis of InNxP1-x thin films by N ion implantation, APPL PHYS L, 78(8), 2001, pp. 1077-1079
Authors:
Buyanova, IA
Chen, WM
Goldys, EM
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Structural properties of a GaNxP1-x alloy: Raman studies, APPL PHYS L, 78(25), 2001, pp. 3959-3961
Authors:
Zhang, Y
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Valence-band splitting and shear deformation potential of dilute GaAs1-xNxalloys, PHYS REV B, 61(7), 2000, pp. 4433-4436
Authors:
Kozhevnikov, M
Narayanamurti, V
Reddy, CV
Xin, HP
Tu, CW
Mascarenhas, A
Zhang, Y
Citation: M. Kozhevnikov et al., Evolution of GaAs1-xNx conduction states and giant Au/GaAs1-xNx Schottky barrier reduction studied by ballistic electron emission spectroscopy, PHYS REV B, 61(12), 2000, pp. R7861-R7864
Authors:
Zhang, Y
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Formation of an impurity band and its quantum confinement in heavily dopedGaAs : N, PHYS REV B, 61(11), 2000, pp. 7479-7482
Authors:
Xin, HP
Tu, CW
Geva, M
Citation: Hp. Xin et al., Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1476-1479
GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates
Authors:
Xin, HP
Welty, RJ
Tu, CW
Citation: Hp. Xin et al., GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates, IEEE PHOTON, 12(8), 2000, pp. 960-962
Authors:
Buyanova, IA
Chen, WM
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy, MAT SCI E B, 75(2-3), 2000, pp. 166-169
Authors:
Zhang, Y
Fluegel, B
Mascarenhas, A
Xin, HP
Tu, CW
Citation: Y. Zhang et al., Optical transitions in the isoelectronically doped semiconductor GaP : N: An evolution from isolated centers, pairs, and clusters to an impurity band, PHYS REV B, 62(7), 2000, pp. 4493-4500
Authors:
Xin, HP
Kavanagh, KL
Tu, CW
Citation: Hp. Xin et al., Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells, J CRYST GR, 208(1-4), 2000, pp. 145-152
Authors:
Buyanova, IA
Pozina, G
Hai, PN
Thinh, NQ
Bergman, JP
Chen, WM
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy, APPL PHYS L, 77(15), 2000, pp. 2325-2327
Authors:
Xin, HP
Tu, CW
Citation: Hp. Xin et Cw. Tu, Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy, APPL PHYS L, 77(14), 2000, pp. 2180-2182
Authors:
Xin, HP
Welty, RJ
Tu, CW
Citation: Hp. Xin et al., GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates, APPL PHYS L, 77(13), 2000, pp. 1946-1948