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Results: 1-25 | 26-37

Results: 1-25/37

TANTALUM PENTOXIDE (TA2O5) THIN-FILMS FOR ADVANCED DIELECTRIC APPLICATIONS

Authors: CHANELIERE C AUTRAN JL DEVINE RAB BALLAND B

Citation: C. Chaneliere et al., TANTALUM PENTOXIDE (TA2O5) THIN-FILMS FOR ADVANCED DIELECTRIC APPLICATIONS, Materials science & engineering. R, Reports, 22(6), 1998, pp. 269-322

PROPERTIES OF AMORPHOUS AND CRYSTALLINE TA2O5 THIN-FILMS DEPOSITED ONSI FROM A TA(OC2H5)(5) PRECURSOR

Authors: CHANELIERE C FOUR S AUTRAN JL DEVINE RAB SANDLER NP

Citation: C. Chaneliere et al., PROPERTIES OF AMORPHOUS AND CRYSTALLINE TA2O5 THIN-FILMS DEPOSITED ONSI FROM A TA(OC2H5)(5) PRECURSOR, Journal of applied physics, 83(9), 1998, pp. 4823-4829

SURFACE-POTENTIAL DETERMINATION IN IRRADIATED MOS-TRANSISTORS COMBINING CURRENT-VOLTAGE AND CHARGE-PUMPING MEASUREMENTS

Authors: MASSON P AUTRAN JL RAYNAUD C FLAMENT O PAILLET P CHABRERIE C

Citation: P. Masson et al., SURFACE-POTENTIAL DETERMINATION IN IRRADIATED MOS-TRANSISTORS COMBINING CURRENT-VOLTAGE AND CHARGE-PUMPING MEASUREMENTS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1355-1364

RADIATION-INDUCED TRAP LEVELS IN SIMOX OXIDES - LOW-TEMPERATURE THERMALLY STIMULATED LUMINESCENCE

Authors: MARTINI M MEINARDI F ROSETTA E SPINOLO G VEDDA A LERAY JL PAILLET P AUTRAN JL DEVINE RAB

Citation: M. Martini et al., RADIATION-INDUCED TRAP LEVELS IN SIMOX OXIDES - LOW-TEMPERATURE THERMALLY STIMULATED LUMINESCENCE, IEEE transactions on nuclear science, 45(3), 1998, pp. 1396-1401

IRRADIATION EFFECTS IN ULTRATHIN SI SIO2 STRUCTURES/

Authors: CANTIN JL VONBARDELEBEN HJ AUTRAN JL

Citation: Jl. Cantin et al., IRRADIATION EFFECTS IN ULTRATHIN SI SIO2 STRUCTURES/, IEEE transactions on nuclear science, 45(3), 1998, pp. 1407-1411

A NEW INTEGRATED TEST STRUCTURE FOR ON-CHIP POSTIRRADIATION ANNEALINGIN MOS DEVICES

Authors: CHABRERIE C AUTRAN JL FLAMENT O BOUDENOT JC

Citation: C. Chabrerie et al., A NEW INTEGRATED TEST STRUCTURE FOR ON-CHIP POSTIRRADIATION ANNEALINGIN MOS DEVICES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1438-1443

INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS

Authors: MASSON P GHIBAUDO G AUTRAN JL MORFOULI P BRINI J

Citation: P. Masson et al., INFLUENCE OF QUADRATIC MOBILITY DEGRADATION FACTOR ON LOW-FREQUENCY NOISE IN MOS-TRANSISTORS, Electronics Letters, 34(20), 1998, pp. 1977-1979

RADIATION EFFECTS IN THIN-FILM FERROELECTRIC PZT FOR NONVOLATILE MEMORY APPLICATIONS IN MICROELECTRONICS

Authors: LERAY JL MUSSEAU O PAILLET P AUTRAN JL SODI D COIC YM

Citation: Jl. Leray et al., RADIATION EFFECTS IN THIN-FILM FERROELECTRIC PZT FOR NONVOLATILE MEMORY APPLICATIONS IN MICROELECTRONICS, Journal de physique. III, 7(6), 1997, pp. 1227-1243

FABRICATION AND CHARACTERIZATION OF SI-MOSFETS WITH PECVD AMORPHOUS TA2O5 GATE INSULATOR

Authors: AUTRAN JL DEVINE R CHANELIERE C BALLAND B

Citation: Jl. Autran et al., FABRICATION AND CHARACTERIZATION OF SI-MOSFETS WITH PECVD AMORPHOUS TA2O5 GATE INSULATOR, IEEE electron device letters, 18(9), 1997, pp. 447-449

USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR

Authors: DEVINE RAB CHANELIERE C AUTRAN JL BALLAND B PAILLET P LERAY JL

Citation: Rab. Devine et al., USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR, Microelectronic engineering, 36(1-4), 1997, pp. 61-64

LOCATION OF INDIVIDUAL TRAPS IN DRAM CELL TRANSISTORS BY CHARGE-PUMPING TECHNIQUE

Authors: PIERUNEK S AUTRAN JL LEROY B GABORIEAU LM BALLAND B

Citation: S. Pierunek et al., LOCATION OF INDIVIDUAL TRAPS IN DRAM CELL TRANSISTORS BY CHARGE-PUMPING TECHNIQUE, Microelectronic engineering, 36(1-4), 1997, pp. 83-86

CHARGE TRAPPING IN SIMOX AND UNIBOND(R) OXIDES

Authors: GRUBER O PAILLET P AUTRAN JL ASPAR B AUBERTONHERVE AJ

Citation: O. Gruber et al., CHARGE TRAPPING IN SIMOX AND UNIBOND(R) OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 387-390

PROCEEDINGS OF THE FRANCO-ITALIAN SYMPOSIUM ON STRUCTURE AND DEFECTS IN SIO2, FUNDAMENTALS AND APPLICATIONS - AGELONDE, FRANCE - SEPTEMBER 23-25 1996 - PREFACE

Authors: DEVINE RAB SPINOLO G AUTRAN JL VEDDA A

Citation: Rab. Devine et al., PROCEEDINGS OF THE FRANCO-ITALIAN SYMPOSIUM ON STRUCTURE AND DEFECTS IN SIO2, FUNDAMENTALS AND APPLICATIONS - AGELONDE, FRANCE - SEPTEMBER 23-25 1996 - PREFACE, Journal of non-crystalline solids, 216, 1997, pp. 7-7

CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS

Authors: FLAMENT O AUTRAN JL PAILLET P ROCHE P FAYNOT O TRUCHE R

Citation: O. Flament et al., CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1930-1938

ISOTHERMAL AND ISOCHRONAL ANNEALING METHODOLOGY TO STUDY POSTIRRADIATION TEMPERATURE ACTIVATED PHENOMENA

Authors: CHABRERIE C AUTRAN JL PAILLET P FLAMENT O LERAY JL BOUDENOT JC

Citation: C. Chabrerie et al., ISOTHERMAL AND ISOCHRONAL ANNEALING METHODOLOGY TO STUDY POSTIRRADIATION TEMPERATURE ACTIVATED PHENOMENA, IEEE transactions on nuclear science, 44(6), 1997, pp. 2007-2012

INTERFACIAL HARDNESS ENHANCEMENT IN DEUTERIUM ANNEALED 0.25 MU-M CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

Authors: DEVINE RAB AUTRAN JL WARREN WL VANHEUSDAN KL ROSTAING JC

Citation: Rab. Devine et al., INTERFACIAL HARDNESS ENHANCEMENT IN DEUTERIUM ANNEALED 0.25 MU-M CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Applied physics letters, 70(22), 1997, pp. 2999-3001

AN OVERVIEW OF BURIED OXIDES ON SILICON - NEW PROCESSES AND RADIATIONEFFECTS

Authors: LERAY JL PAILLET P AUTRAN JL

Citation: Jl. Leray et al., AN OVERVIEW OF BURIED OXIDES ON SILICON - NEW PROCESSES AND RADIATIONEFFECTS, Journal de physique. III, 6(12), 1996, pp. 1625-1646

USE OF THE CHARGE-PUMPING TECHNIQUE WITH A SINUSOIDAL GATE WAVE-FORM

Authors: AUTRAN JL CHABRERIE C

Citation: Jl. Autran et C. Chabrerie, USE OF THE CHARGE-PUMPING TECHNIQUE WITH A SINUSOIDAL GATE WAVE-FORM, Solid-state electronics, 39(9), 1996, pp. 1394-1395

RADIATION-INDUCED INTERFACE TRAPS IN HARDENED MOS-TRANSISTORS - AN IMPROVED CHARGE-PUMPING STUDY

Authors: AUTRAN JL CHABRERIE C PAILLET P FLAMENT O LERAY JL BOUDENOT JC

Citation: Jl. Autran et al., RADIATION-INDUCED INTERFACE TRAPS IN HARDENED MOS-TRANSISTORS - AN IMPROVED CHARGE-PUMPING STUDY, IEEE transactions on nuclear science, 43(6), 1996, pp. 2547-2557

ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS

Authors: FLAMENT O AUTRAN JL ROCHE P LERAY JL MUSSEAU O TRUCHE R ORSIER E

Citation: O. Flament et al., ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3060-3067

X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS

Authors: PAILLET P AUTRAN JL FLAMENT O LERAY JL ASPAR B AUBERTONHERVE AJ

Citation: P. Paillet et al., X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS, IEEE transactions on nuclear science, 43(3), 1996, pp. 821-825

RADIATION-INDUCED THERMALLY STIMULATED LUMINESCENCE AND CONDUCTIVITY IN SIMOX OXIDES

Authors: MARTINI M MEINARDI F ROSETTA E SPINOLO G VEDDA A LERAY JL PAILLET P AUTRAN JL DEVINE RAB

Citation: M. Martini et al., RADIATION-INDUCED THERMALLY STIMULATED LUMINESCENCE AND CONDUCTIVITY IN SIMOX OXIDES, IEEE transactions on nuclear science, 43(3), 1996, pp. 845-850

ELECTRICAL-PROPERTIES OF TA2O5 FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING A TAF5 SOURCE

Authors: DEVINE RAB VALLIER L AUTRAN JL PAILLET P LERAY JL

Citation: Rab. Devine et al., ELECTRICAL-PROPERTIES OF TA2O5 FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING A TAF5 SOURCE, Applied physics letters, 68(13), 1996, pp. 1775-1777

CONDUCTION PROPERTIES OF AMORPHOUS TA2O5 FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors: AUTRAN JL PAILLET P LERAY JL DEVINE RAB

Citation: Jl. Autran et al., CONDUCTION PROPERTIES OF AMORPHOUS TA2O5 FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Sensors and actuators. A, Physical, 51(1), 1995, pp. 5-8

ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE

Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BILLON T LASSAGNE P

Citation: C. Raynaud et al., ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE, Microelectronic engineering, 28(1-4), 1995, pp. 209-212

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