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Results:
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Results: 20
Authors:
WARTLICK BO
BLANCHARD C
BARBOT JF
Citation: Bo. Wartlick et al., INDUCED ELECTRIC-FIELD EFFECT ON HEAVILY COMPENSATED P-TYPE SEMICONDUCTORS, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 78(1), 1998, pp. 79-86
Authors:
TILLAY V
PAILLOUX F
DENANOT MF
PIROUZ P
RABIER J
DEMENET JL
BARBOT JF
Citation: V. Tillay et al., DISLOCATIONS IN 6H-SIC AND THEIR INFLUENCE ON ELECTRICAL-PROPERTIES OF N-TYPE CRYSTALS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2(2), 1998, pp. 111-115
Authors:
SCHMIDT DC
SVENSSON BG
KESKITALO N
GODEY S
NTSOENZOK E
BARBOT JF
BLANCHARD C
Citation: Dc. Schmidt et al., PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON, Journal of applied physics, 84(8), 1998, pp. 4214-4218
Authors:
WARTLICK BO
BARBOT JF
BLANCHARD C
Citation: Bo. Wartlick et al., DETERMINATION OF DONOR DIFFUSION-COEFFICIENTS IN P-TYPE SEMICONDUCTORS FROM CAPACITANCE TRANSIENTS - APPLICATION TO CU AND AG DIFFUSION IN CD-RICH HG1-XCDXTE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(5), 1997, pp. 639-646
Authors:
SCHMIDT DC
BARBOT JF
BLANCHARD C
DESGARDIN P
NTSOENZOK E
BLONDIAUX G
Citation: Dc. Schmidt et al., STUDIES OF DEEP LEVELS IN HE-IRRADIATED SILICON(), Applied physics A: Materials science & processing, 65(4-5), 1997, pp. 403-406
Authors:
SCHMIDT DC
BARBOT JF
BLANCHARD C
NTSOENZOK E
Citation: Dc. Schmidt et al., DEFECT LEVELS OF PROTON-IRRADIATED SILICON WITH A DOSE OF 3.6 X 10(13) CM(-2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(3), 1997, pp. 439-446
Authors:
DESGARDIN P
HENRY L
NTSOENZOK E
BLONDIAUX G
BARBOT JF
BLANCHARD C
Citation: P. Desgardin et al., THE EFFECT OF PARTICLE-FLUENCE AND FLUX IN ALPHA-IRRADIATED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 59-62
Authors:
GIRAULT P
BLANCHARD C
GROSBRAS P
BARBOT JF
Citation: P. Girault et al., RELAXATION-TIME FOR IONIZED IMPURITY SCATTERING IN COMPENSATED N-TYPEHG1-XCDXTE NEAR X=0.2, Journal of Materials Science, 32(14), 1997, pp. 3857-3861
Authors:
BARBOT JF
BLANCHARD C
NTSOENZOK E
VERNOIS J
Citation: Jf. Barbot et al., DEFECT LEVELS IN N-SILICON AFTER HIGH-ENERGY AND HIGH-DOSE IMPLANTATION OF PROTON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 81-84
Authors:
NTSOENZOK E
DESGARDIN P
BARBOT JF
VERNOIS J
ISABELLE DB
Citation: E. Ntsoenzok et al., COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 154-157
Authors:
BARBOT JF
WARTLICK BO
PINHEDE LF
BLANCHARD C
Citation: Jf. Barbot et al., ION DRIFT IN CD-RICH HGCDTE CRYSTALS, Journal of electronic materials, 25(8), 1996, pp. 1172-1175
Authors:
DESGARDIN P
NTSOENZOK E
BARBOT JF
BRIAUD J
VERNOIS J
ISABELLE DB
Citation: P. Desgardin et al., BEAM SCANNING SYSTEM FOR THE UNIFORMITY OF IMPLANTED DOSES IN A LARGE-AREA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 267-269
Authors:
KOEHLER M
FERRARI EF
BARBOT JF
HUMMELGEN IA
Citation: M. Koehler et al., MODEL AND RESULTS FOR A DEEP-LEVEL WITH 2 DIFFERENT CONFIGURATIONS INHG0.3CD0.7TE, Physical review. B, Condensed matter, 53(12), 1996, pp. 7805-7809
Authors:
NTSOENZOK E
DESGARDIN P
SAILLARD M
VERNOIS J
BARBOT JF
Citation: E. Ntsoenzok et al., EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON, Journal of applied physics, 79(11), 1996, pp. 8274-8277
Authors:
RENAULT PO
BARBOT JF
GIRAULT P
DECLEMY A
RIVAUD G
BLANCHARD C
Citation: Po. Renault et al., PROPERTIES OF DISLOCATIONS IN HGCDTE CRYSTALS, Journal de physique. III, 5(9), 1995, pp. 1383-1389
Authors:
GIRAULT P
BARBOT JF
BLANCHARD C
Citation: P. Girault et al., ELECTRICAL PROPERTY OF N-HG0.8CD0.2TE PLASTICALLY DEFORMED, Journal of materials science letters, 14(6), 1995, pp. 449-451
DEFECT LEVEL OF PROTON-IRRADIATED SILICON WITH DOSES RANGING FROM 1X10(12) CM(-2) TO 1X10(13) CM(-2)
Authors:
BARBOT JF
NTSOENZOK E
BLANCHARD C
VERNOIS J
ISABELLE DB
Citation: Jf. Barbot et al., DEFECT LEVEL OF PROTON-IRRADIATED SILICON WITH DOSES RANGING FROM 1X10(12) CM(-2) TO 1X10(13) CM(-2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(2), 1995, pp. 213-218
Authors:
WARTLICK BO
BARBOT JF
SCHROTER W
BLANCHARD C
Citation: Bo. Wartlick et al., ELECTROMIGRATION IN SE-DOPED HG0.3CD0.7TE CRYSTALS, Physica status solidi. a, Applied research, 148(1), 1995, pp. 111-121
Authors:
BARBOT JF
GIRAULT P
BLANCHARD C
HUMMELGEN IA
Citation: Jf. Barbot et al., OBSERVATION OF DEEP LEVELS ASSOCIATED WITH DISLOCATIONS IN N-TYPE HG0.3CD0.7TE, Journal of Materials Science, 30(13), 1995, pp. 3471-3474
Authors:
NTSOENZOK E
BARBOT JF
DESGARDIN P
VERNOIS J
BLANCHARD C
ISABELLE DB
Citation: E. Ntsoenzok et al., STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1932-1936
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