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Results: 26-50/62
Authors:
KINOMURA A
CHAYAHARA A
HORINO Y
MOKUNO Y
FUJII K
Citation: A. Kinomura et al., ION MASS DEPENDENCE OF NORMALIZED REGROWTH RATE IN MEV ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 277-280
Authors:
HORINO Y
MOKUNO Y
TSUBOUCHI N
KINOMURA A
CHAYAHARA A
FUJII K
Citation: Y. Horino et al., ANALYSIS OF IRON BY PIXE USING HEAVY-ION MICROPROBES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 104(1-4), 1995, pp. 49-51
Authors:
KINOMURA A
HORINO Y
MOKUNO Y
CHAYAHARA A
FUJII K
Citation: A. Kinomura et al., DAMAGE OF POLYIMIDE THIN-FILMS IRRADIATED BY MEV PROTON MICROBEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 104(1-4), 1995, pp. 55-58
Authors:
HORINO Y
MOKUNO Y
KINOMURA A
CHAYAHARA A
FUJII K
Citation: Y. Horino et al., APPLICATION OF A MEV NICKEL ION-BEAM FOR PIXE ANALYSIS OF IRON NEAR-THE-SURFACE OF A SILICON-WAFER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(1), 1995, pp. 122-124
Authors:
FUKANO Y
HONTANI KJ
UCHIHASHI T
OKUSAKO T
CHAYAHARA A
SUGAWARA Y
YAMANISHI Y
OASA T
MORITA S
Citation: Y. Fukano et al., TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SILICON-OXIDE USING DENSECONTACT ELECTRIFICATION, JPN J A P 1, 33(6B), 1994, pp. 3756-3760
Authors:
FUKANO Y
UCHIHASHI T
OKUSAKO T
CHAYAHARA A
SUGAWARA Y
YAMANISHI Y
OASA T
MORITA S
Citation: Y. Fukano et al., TIME EVOLUTION OF CONTACT-ELECTRIFIED ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE INVESTIGATED USING NONCONTACT ATOMIC-FORCE MICROSCOPE, JPN J A P 1, 33(1B), 1994, pp. 379-382
Authors:
FUKANO Y
UCHIHASHI T
OKUSAKO T
CHAYAHARA A
SUGAWARA Y
YAMANISHI Y
OASA T
MORITA S
Citation: Y. Fukano et al., PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE, JPN J A P 1, 33(12A), 1994, pp. 6739-6745
Authors:
SUGAWARA Y
MORITA S
FUKANO Y
UCHIHASHI T
OKUSAKO T
CHAYAHARA A
YAMANISHI Y
OASA T
Citation: Y. Sugawara et al., SPATIAL-DISTRIBUTION AND ITS PHASE-TRANSITION OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON A THIN SILICON-OXIDE, JPN J A P 2, 33(1A), 1994, pp. 120000070-120000073
Authors:
SUGAWARA Y
MORITA S
FUKANO Y
UCHIHASHI T
OKUSAKO T
CHAYAHARA A
YAMANISHI Y
OASA T
Citation: Y. Sugawara et al., SPATIAL DISTRIBUTIONS OF DENSELY CONTACT-ELECTRIFIED CHARGES ON A THIN SILICON-OXIDE, JPN J A P 2, 33(1A), 1994, pp. 120000074-120000077
Authors:
TAKAI M
KATAYAMA Y
LOHNER T
KINOMURA A
RYSSEL H
TSIEN PH
BURTE E
SATOU M
CHAYAHARA A
Citation: M. Takai et al., NUCLEAR MICROPROBE APPLICATION TO SEMICONDUCTOR PROCESS-DEVELOPMENT -SILICIDE FORMATION AND MULTILAYERED STRUCTURE, Radiation effects and defects in solids, 127(3-4), 1994, pp. 357-365
Authors:
KIUCHI M
CHAYAHARA A
KINOMURA A
Citation: M. Kiuchi et al., NITRIDATION OF VANADIUM BY ION-BEAM IRRADIATION, Surface & coatings technology, 65(1-3), 1994, pp. 142-147
Authors:
HORINO Y
MOKUNO Y
KINOMURA A
CHAYAHARA A
FUJII K
Citation: Y. Horino et al., HEAVY-ION MICROPROBE FOR PIXE ANALYSIS OF IRON, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 353(1-3), 1994, pp. 619-622
Authors:
FUKUMI K
CHAYAHARA A
FUJII K
HAYAKAWA J
SATOU M
Citation: K. Fukumi et al., STRUCTURE OF OXYGEN, BORON AND NICKEL ION-IMPLANTED SILICA GLASSES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 413-417
Authors:
KINOMURA A
HORINO Y
MOKUNO Y
CHAYAHARA A
KIUCHI M
FUJII K
TAKAI M
LU YF
Citation: A. Kinomura et al., 3-DIMENSIONAL ANALYSIS OF LOCALLY DEPOSITED SILICON-OXIDE ON FERRITE BY A COMBINATION OF MICROPROBE RBS AND PIXE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 689-692
Authors:
MOKUNO Y
HORINO Y
KINOMURA A
CHAYAHARA A
KIUCHI M
FUJII K
TAKAI M
Citation: Y. Mokuno et al., MEV HEAVY-ION MICROPROBE PIXE FOR THE ANALYSIS OF THE MATERIALS SURFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 741-743
Authors:
KINOMURA A
HORINO Y
MOKUNO Y
CHAYAHARA A
KIUCHI M
FUJII K
TAKAI M
LOHNER T
RYSSEL H
SCHORK R
Citation: A. Kinomura et al., OBSERVATION OF LOCAL SIMOX LAYERS BY MICROPROBE RBS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 921-924
Authors:
YOKOTA K
SAKAGUCHI M
INOHARA H
NAKANISHI H
TAMURA S
HORINO Y
CHAYAHARA A
SATHO M
HIRAI K
TAKANO H
KUMAGAYA M
Citation: K. Yokota et al., DEPENDENCE OF THE ACTIVITY EFFICIENCY OF MG-IMPLANTED INTO GAAS ON THE CONCENTRATION OF AS DOPED INTO A-SIH ENCAPSULANTS, Solid-state electronics, 37(1), 1994, pp. 9-15
Authors:
FUKUMI K
CHAYAHARA A
KITAMURA N
AKAI T
HAYAKAWA J
FUJII K
SATOU M
Citation: K. Fukumi et al., FORMATION OF CUCL ULTRAFINE PARTICLES IN SILICA GLASS BY ION-IMPLANTATION, Journal of non-crystalline solids, 178, 1994, pp. 155-159
Authors:
FUKUMI K
CHAYAHARA A
KADONO K
SAKAGUCHI T
HORINO Y
MIYA M
FUJII K
HAYAKAWA J
SATOU M
Citation: K. Fukumi et al., GOLD NANOPARTICLES ION-IMPLANTED IN GLASS WITH ENHANCED NONLINEAR-OPTICAL PROPERTIES, Journal of applied physics, 75(6), 1994, pp. 3075-3080
Authors:
KIUCHI M
CHAYAHARA A
Citation: M. Kiuchi et A. Chayahara, TITANIUM NITRIDE FOR TRANSPARENT CONDUCTORS, Applied physics letters, 64(8), 1994, pp. 1048-1049
Authors:
FUKUMI K
CHAYAHARA A
MAKIHARA M
FUJII K
HAYAKAWA J
SATOU M
Citation: K. Fukumi et al., STRUCTURE OF AU ULTRAFINE PARTICLES IN SILICA GLASS - X-RAY-DIFFRACTION STUDY, Applied physics letters, 64(25), 1994, pp. 3410-3412
Authors:
FUKUMI K
CHAYAHARA A
MAKIHARA M
FUJII K
HAYAKAWA J
SATOU M
Citation: K. Fukumi et al., CHEMICAL-STATES OF IMPLANTED ALUMINUM IONS IN SILICA AND SILICON IONSIN ALUMINA, Journal of the American Ceramic Society, 77(11), 1994, pp. 3019-3022
Authors:
YOKOTA K
NISHIDA K
YUTANI A
TAMURA S
HORINO Y
CHAYAHARA A
SATHO M
HIRAI K
TAKANO H
KUMAGAYA M
Citation: K. Yokota et al., ANNEALING OF SE-IMPLANTED GAAS ENCAPSULATED WITH AS-DOPED A-SI-H(), JPN J A P 1, 32(10), 1993, pp. 4418-4424
Authors:
CHAYAHARA A
KIUCHI M
KINOMURA A
MOKUNO Y
HORINO Y
FUJII K
Citation: A. Chayahara et al., FORMATION OF CRYSTALLINE SIC BURIED LAYER BY HIGH-DOSE IMPLANTATION OF MEV CARBON-IONS AT HIGH-TEMPERATURE, JPN J A P 2, 32(9A), 1993, pp. 120001286-120001288
Authors:
MORITA S
SUGAWARA Y
FUKANO Y
UCHIHASHI T
OKUSAKO T
CHAYAHARA A
YAMANISHI Y
OASA T
Citation: S. Morita et al., STABLE-UNSTABLE PHASE-TRANSITION OF DENSELY CONTRACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE, JPN J A P 2, 32(12B), 1993, pp. 120001852-120001854