ACNP - Italian Periodicals Catalogue

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Results: 1-23 |

Results: 23

EFFECT OF METAL TYPE ON THE CONTACTS TO N-TYPE AND P-TYPE GAN

Authors: RENNIE J ONOMURA M NUNOUE S HATAKOSHI G SUGAWARA H ISHIKAWA M

Citation: J. Rennie et al., EFFECT OF METAL TYPE ON THE CONTACTS TO N-TYPE AND P-TYPE GAN, Journal of crystal growth, 190, 1998, pp. 711-715

THE INFLUENCE OF SURFACE-TREATMENT ON THE QUALITY OF PD AU CONTACTS TO P-TYPE ZNSE/

Authors: RENNIE J ONOMURA H NISHIKAWA Y SAITO S ISHIKAWA M HATAKOSHI G

Citation: J. Rennie et al., THE INFLUENCE OF SURFACE-TREATMENT ON THE QUALITY OF PD AU CONTACTS TO P-TYPE ZNSE/, JPN J A P 1, 35(3), 1996, pp. 1664-1667

SCHOTTKY-BARRIER HEIGHT REDUCTION FOR P-ZNSE CONTACTS BY SULFUR TREATMENT

Authors: ONOMURA M SAITO S RENNIE J NISHIKAWA Y PARBROOK PJ ISHIKAWA M HATAKOSHI G

Citation: M. Onomura et al., SCHOTTKY-BARRIER HEIGHT REDUCTION FOR P-ZNSE CONTACTS BY SULFUR TREATMENT, JPN J A P 1, 35(2B), 1996, pp. 1428-1430

ROOM-TEMPERATURE PULSED OPERATION OF NITRIDE BASED MULTI-QUANTUM-WELLLASER-DIODES WITH CLEAVED FACETS ON CONVENTIONAL C-FACE SAPPHIRE SUBSTRATES

Authors: ITAYA K ONOMURA M NISHIO J SUGIURA L SAITO S SUZUKI M RENNIE J NUNOUE SY YAMAMOTO M FUJIMOTO H KOKUBUN Y OHBA Y HATAKOSHI G ISHIKAWA M

Citation: K. Itaya et al., ROOM-TEMPERATURE PULSED OPERATION OF NITRIDE BASED MULTI-QUANTUM-WELLLASER-DIODES WITH CLEAVED FACETS ON CONVENTIONAL C-FACE SAPPHIRE SUBSTRATES, JPN J A P 2, 35(10B), 1996, pp. 1315-1317

OPERATION VOLTAGE REDUCTION IN ZNSE-BASED LIGHT-EMITTING-DIODES DUE TO THE USE OF N-TYPE ALGAAS AND CDZNSE BUFFER REGIONS

Authors: RENNIE J NISHIKAWA Y SAITO S ONOMURA M HATAKOSHI G

Citation: J. Rennie et al., OPERATION VOLTAGE REDUCTION IN ZNSE-BASED LIGHT-EMITTING-DIODES DUE TO THE USE OF N-TYPE ALGAAS AND CDZNSE BUFFER REGIONS, Applied physics letters, 68(21), 1996, pp. 2971-2972

DEPENDENCE OF THE STRUCTURAL-PROPERTIES OF ZNSE ON GAAS SUBSTRATE ORIENTATION

Authors: PARBROOK PJ ISHIKAWA M NISHIKAWA Y SAITO S ONOMURA M HATAKOSHI G

Citation: Pj. Parbrook et al., DEPENDENCE OF THE STRUCTURAL-PROPERTIES OF ZNSE ON GAAS SUBSTRATE ORIENTATION, Journal of crystal growth, 150(1-4), 1995, pp. 749-754

HYBRID-TYPE INGAALP GAAS DISTRIBUTED BRAGG REFLECTORS FOR INGAALP LIGHT-EMITTING-DIODES/

Authors: SUGAWARA H ITAYA K HATAKOSHI G

Citation: H. Sugawara et al., HYBRID-TYPE INGAALP GAAS DISTRIBUTED BRAGG REFLECTORS FOR INGAALP LIGHT-EMITTING-DIODES/, JPN J A P 1, 33(11), 1994, pp. 6195-6198

EMISSION PROPERTIES OF INGAALP VISIBLE LIGHT-EMITTING-DIODES EMPLOYING A MULTI-QUANTUM-WELL ACTIVE LAYER

Authors: SUGAWARA H ITAYA K HATAKOSHI G

Citation: H. Sugawara et al., EMISSION PROPERTIES OF INGAALP VISIBLE LIGHT-EMITTING-DIODES EMPLOYING A MULTI-QUANTUM-WELL ACTIVE LAYER, JPN J A P 1, 33(10), 1994, pp. 5784-5787

SURFACE PREPARATION EFFECTS FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE LAYERS ON INGAP LAYERS

Authors: SAITO S NISHIKAWA Y ONOMURA M PARBROOK PJ ISHIKAWA M HATAKOSHI G

Citation: S. Saito et al., SURFACE PREPARATION EFFECTS FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE LAYERS ON INGAP LAYERS, JPN J A P 2, 33(5B), 1994, pp. 120000705-120000707

ENHANCEMENT OF NITROGEN INCORPORATION IN ZNSE GROWN ON MISORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

Authors: NISHIKAWA Y ISHIKAWA M SAITO S HATAKOSHI G

Citation: Y. Nishikawa et al., ENHANCEMENT OF NITROGEN INCORPORATION IN ZNSE GROWN ON MISORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 33(3A), 1994, pp. 120000361-120000364

INGAALP VISIBLE-LIGHT LASER-DIODES AND LIGHT-EMITTING-DIODES

Authors: ITAYA K SUGAWARA H HATAKOSHI G

Citation: K. Itaya et al., INGAALP VISIBLE-LIGHT LASER-DIODES AND LIGHT-EMITTING-DIODES, Journal of crystal growth, 138(1-4), 1994, pp. 768-775

MEASUREMENT OF THE BARRIER HEIGHT OF A MULTIPLE-QUANTUM BARRIER (MQB)

Authors: RENNIE J OKAJIMA M ITAYA K HATAKOSHI G

Citation: J. Rennie et al., MEASUREMENT OF THE BARRIER HEIGHT OF A MULTIPLE-QUANTUM BARRIER (MQB), IEEE journal of quantum electronics, 30(12), 1994, pp. 2781-2789

HIGH-BRIGHTNESS LOW-VOLTAGE MESA STYLE ZNSE LIGHT-EMITTING-DIODES

Authors: RENNIE J ONOMURA M NISHIKAWA Y SAITO S PARBROOK PJ NITTA K ISHIKAWA M HATAKOSHI G

Citation: J. Rennie et al., HIGH-BRIGHTNESS LOW-VOLTAGE MESA STYLE ZNSE LIGHT-EMITTING-DIODES, Electronics Letters, 30(13), 1994, pp. 1090-1091

CURRENT-VOLTAGE CHARACTERISTICS OF P-P ISOTYPE INGAALP GAAS HETEROJUNCTION WITH A LARGE VALENCE-BAND DISCONTINUITY

Authors: ITAYA K ISHIKAWA M HATAKOSHI G

Citation: K. Itaya et al., CURRENT-VOLTAGE CHARACTERISTICS OF P-P ISOTYPE INGAALP GAAS HETEROJUNCTION WITH A LARGE VALENCE-BAND DISCONTINUITY, JPN J A P 1, 32(5A), 1993, pp. 1919-1922

CHARACTERISTICS OF A DISTRIBUTED-BRAGG-REFLECTOR FOR THE VISIBLE-LIGHT SPECTRAL REGION USING INGAALP AND GAAS - COMPARISON OF TRANSPARENT-TYPE AND LOSS-TYPE STRUCTURES

Authors: SUGAWARA H ITAYA K HATAKOSHI G

Citation: H. Sugawara et al., CHARACTERISTICS OF A DISTRIBUTED-BRAGG-REFLECTOR FOR THE VISIBLE-LIGHT SPECTRAL REGION USING INGAALP AND GAAS - COMPARISON OF TRANSPARENT-TYPE AND LOSS-TYPE STRUCTURES, Journal of applied physics, 74(5), 1993, pp. 3189-3193

HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER

Authors: RENNIE J OKAJIMA M WATANABE M HATAKOSHI G

Citation: J. Rennie et al., HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER, IEEE journal of quantum electronics, 29(6), 1993, pp. 1857-1862

REMARKABLE IMPROVEMENT IN THE TEMPERATURE CHARACTERISTICS OF GAAS-LASERS USING AN INGAALP CLADDING LAYER

Authors: ITAYA K HATAKOSHI G ISHIKAWA M NISHIKAWA Y SAITO S OKAJIMA M

Citation: K. Itaya et al., REMARKABLE IMPROVEMENT IN THE TEMPERATURE CHARACTERISTICS OF GAAS-LASERS USING AN INGAALP CLADDING LAYER, IEEE journal of quantum electronics, 29(6), 1993, pp. 2068-2073

IMPROVEMENT IN THE TEMPERATURE CHARACTERISTICS OF 630NM BAND INGAALP MULTI-QUANTUM-WELL LASER-DIODES USING A 15-DEGREES MISORIENTED SUBSTRATE

Authors: WATANABE M RENNIE J OKAJIMA M HATAKOSHI G

Citation: M. Watanabe et al., IMPROVEMENT IN THE TEMPERATURE CHARACTERISTICS OF 630NM BAND INGAALP MULTI-QUANTUM-WELL LASER-DIODES USING A 15-DEGREES MISORIENTED SUBSTRATE, Electronics Letters, 29(3), 1993, pp. 250-252

BLUE-GREEN LASER-DIODE OPERATION OF CDZNSE ZNSE MQW STRUCTURES GROWN ON INGAP BAND-OFFSET REDUCTION LAYERS/

Authors: ONOMURA M ISHIKAWA M NISHIKAWA Y SAITO S PARBROOK PJ NITTA K RENNIE J HATAKOSHI G

Citation: M. Onomura et al., BLUE-GREEN LASER-DIODE OPERATION OF CDZNSE ZNSE MQW STRUCTURES GROWN ON INGAP BAND-OFFSET REDUCTION LAYERS/, Electronics Letters, 29(24), 1993, pp. 2114-2115

HIGH-TEMPERATURE (77-DEGREES-C) OPERATION OF 634 NM INGAALP MULTI-QUANTUM-WELL LASER-DIODES WITH TENSILE-STRAINED QUANTUM-WELLS

Authors: WATANABE M RENNIE J OKAJIMA M HATAKOSHI G

Citation: M. Watanabe et al., HIGH-TEMPERATURE (77-DEGREES-C) OPERATION OF 634 NM INGAALP MULTI-QUANTUM-WELL LASER-DIODES WITH TENSILE-STRAINED QUANTUM-WELLS, Applied physics letters, 63(11), 1993, pp. 1486-1488

HIGH-TEMPERATURE CONTINUOUS OPERATION ABOVE 200-DEGREES-C OF GAAS-LASERS USING AN INGAALP CLADDING LAYER

Authors: ITAYA K HATAKOSHI G NISHIKAWA Y ISHIKAWA M OKAJIMA M

Citation: K. Itaya et al., HIGH-TEMPERATURE CONTINUOUS OPERATION ABOVE 200-DEGREES-C OF GAAS-LASERS USING AN INGAALP CLADDING LAYER, Applied physics letters, 62(18), 1993, pp. 2176-2178

GRATING LENSES FOR OPTICAL BRANCHING

Authors: HATAKOSHI G NAKAMURA M

Citation: G. Hatakoshi et M. Nakamura, GRATING LENSES FOR OPTICAL BRANCHING, Applied optics, 32(20), 1993, pp. 3661-3668

HIGH-POWER INGAALP LASER-DIODES FOR HIGH-DENSITY OPTICAL-RECORDING

Authors: HATAKOSHI G NITTA K ITAYA K NISHIKAWA Y ISHIKAWA M OKAJIMA M

Citation: G. Hatakoshi et al., HIGH-POWER INGAALP LASER-DIODES FOR HIGH-DENSITY OPTICAL-RECORDING, JPN J A P 1, 31(2B), 1992, pp. 501-507

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