AAAAAA

   
Results: 1-25 | 26-40
Results: 1-25/40
HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/
Authors: FERLETCAVROIS V MARCANDELLA C MUSSEAU O LERAY JL PELLOIE JL MARTIN F KOLEV S PASQUET D
Citation: V. Ferletcavrois et al., HIGH-FREQUENCY PERFORMANCES OF A PARTIALLY DEPLETED 0.18-MU-M SOI CMOS TECHNOLOGY AT LOW SUPPLY VOLTAGE - INFLUENCE OF PARASITIC ELEMENTS/, IEEE electron device letters, 19(7), 1998, pp. 265-267
SIMULATION OF MULTILEVEL RADIATION-INDUCED CHARGE TRAPPING AND THERMALLY ACTIVATED PHENOMENA IN SIO2
Authors: PAILLET P TOURON JL LERAY JL CIRBA C MICHEZ A
Citation: P. Paillet et al., SIMULATION OF MULTILEVEL RADIATION-INDUCED CHARGE TRAPPING AND THERMALLY ACTIVATED PHENOMENA IN SIO2, IEEE transactions on nuclear science, 45(3), 1998, pp. 1379-1384
A METHODOLOGY TO STUDY LATERAL PARASITIC TRANSISTORS IN CMOS TECHNOLOGIES
Authors: FLAMENT O CHABRERIE C FERLETCAVROIS V LERAY JL FACCIO F JARRON P
Citation: O. Flament et al., A METHODOLOGY TO STUDY LATERAL PARASITIC TRANSISTORS IN CMOS TECHNOLOGIES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1385-1389
RADIATION-INDUCED TRAP LEVELS IN SIMOX OXIDES - LOW-TEMPERATURE THERMALLY STIMULATED LUMINESCENCE
Authors: MARTINI M MEINARDI F ROSETTA E SPINOLO G VEDDA A LERAY JL PAILLET P AUTRAN JL DEVINE RAB
Citation: M. Martini et al., RADIATION-INDUCED TRAP LEVELS IN SIMOX OXIDES - LOW-TEMPERATURE THERMALLY STIMULATED LUMINESCENCE, IEEE transactions on nuclear science, 45(3), 1998, pp. 1396-1401
IONIZING DOSE HARDNESS ASSURANCE METHODOLOGY FOR QUALIFICATION OF A BICMOS TECHNOLOGY DEDICATED TO HIGH-DOSE LEVEL APPLICATIONS
Authors: FLAMENT O MUSSEAU O LERAY JL DUTISSEUIL E CORBIERE T
Citation: O. Flament et al., IONIZING DOSE HARDNESS ASSURANCE METHODOLOGY FOR QUALIFICATION OF A BICMOS TECHNOLOGY DEDICATED TO HIGH-DOSE LEVEL APPLICATIONS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1420-1424
ELECTRICAL AND OPTICAL-RESPONSE OF A MACH-ZEHNDER ELECTROOPTICAL MODULATOR TO PULSED IRRADIATION
Authors: DHOSE C CASSAN E BAGGIO J MUSSEAU O LERAY JL
Citation: C. Dhose et al., ELECTRICAL AND OPTICAL-RESPONSE OF A MACH-ZEHNDER ELECTROOPTICAL MODULATOR TO PULSED IRRADIATION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1524-1530
RADIATION EFFECTS IN THIN-FILM FERROELECTRIC PZT FOR NONVOLATILE MEMORY APPLICATIONS IN MICROELECTRONICS
Authors: LERAY JL MUSSEAU O PAILLET P AUTRAN JL SODI D COIC YM
Citation: Jl. Leray et al., RADIATION EFFECTS IN THIN-FILM FERROELECTRIC PZT FOR NONVOLATILE MEMORY APPLICATIONS IN MICROELECTRONICS, Journal de physique. III, 7(6), 1997, pp. 1227-1243
USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR
Authors: DEVINE RAB CHANELIERE C AUTRAN JL BALLAND B PAILLET P LERAY JL
Citation: Rab. Devine et al., USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR, Microelectronic engineering, 36(1-4), 1997, pp. 61-64
ISOTHERMAL AND ISOCHRONAL ANNEALING METHODOLOGY TO STUDY POSTIRRADIATION TEMPERATURE ACTIVATED PHENOMENA
Authors: CHABRERIE C AUTRAN JL PAILLET P FLAMENT O LERAY JL BOUDENOT JC
Citation: C. Chabrerie et al., ISOTHERMAL AND ISOCHRONAL ANNEALING METHODOLOGY TO STUDY POSTIRRADIATION TEMPERATURE ACTIVATED PHENOMENA, IEEE transactions on nuclear science, 44(6), 1997, pp. 2007-2012
TOTAL-DOSE EFFECTS ON A FULLY-DEPLETED SOI NMOSFET AND ITS LATERAL PARASITIC TRANSISTOR
Authors: FERLETCAVROIS V MUSSEAU O LERAY JL PELLOIE JL RAYNAUD C
Citation: V. Ferletcavrois et al., TOTAL-DOSE EFFECTS ON A FULLY-DEPLETED SOI NMOSFET AND ITS LATERAL PARASITIC TRANSISTOR, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 965-971
AN OVERVIEW OF BURIED OXIDES ON SILICON - NEW PROCESSES AND RADIATIONEFFECTS
Authors: LERAY JL PAILLET P AUTRAN JL
Citation: Jl. Leray et al., AN OVERVIEW OF BURIED OXIDES ON SILICON - NEW PROCESSES AND RADIATIONEFFECTS, Journal de physique. III, 6(12), 1996, pp. 1625-1646
RADIATION-INDUCED INTERFACE TRAPS IN HARDENED MOS-TRANSISTORS - AN IMPROVED CHARGE-PUMPING STUDY
Authors: AUTRAN JL CHABRERIE C PAILLET P FLAMENT O LERAY JL BOUDENOT JC
Citation: Jl. Autran et al., RADIATION-INDUCED INTERFACE TRAPS IN HARDENED MOS-TRANSISTORS - AN IMPROVED CHARGE-PUMPING STUDY, IEEE transactions on nuclear science, 43(6), 1996, pp. 2547-2557
2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR
Authors: BRISSET C FERLETCAVROIS V FLAMENT O MUSSEAU O LERAY JL PELLOIE JL ESCOFFIER R MICHEZ A CIRBA C BORDURE G
Citation: C. Brisset et al., 2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR, IEEE transactions on nuclear science, 43(6), 1996, pp. 2651-2658
COMPARISON OF LASER-DIODE RESPONSE TO PULSED ELECTRICAL AND RADIATIVEEXCITATIONS
Authors: BAGGIO J RAINSANT JM DHOSE C LALANDE P MUSSEAU O LERAY JL
Citation: J. Baggio et al., COMPARISON OF LASER-DIODE RESPONSE TO PULSED ELECTRICAL AND RADIATIVEEXCITATIONS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3005-3011
ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS
Authors: FLAMENT O AUTRAN JL ROCHE P LERAY JL MUSSEAU O TRUCHE R ORSIER E
Citation: O. Flament et al., ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3060-3067
DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS
Authors: DENTAN M ABBON P BORGEAUD P DELAGNES E FOURCHES N LACHARTRE D LUGIEZ F PAUL B ROUGER M TRUCHE R BLANC JP LEROUX C DELEVOYEORSIER E PELLOIE JL DEPONTCHARRA J FLAMENT O GUEBHARD JM LERAY JL MONTARON J MUSSEAU O VITEZ A BLANQUART L AUBERT JJ BONZOM V DELPIERRE P HABRARD MC MEKKAOUI A POTHEAU R ARDELEAN J HRISOHO A BRETON D
Citation: M. Dentan et al., DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1763-1767
X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS
Authors: PAILLET P AUTRAN JL FLAMENT O LERAY JL ASPAR B AUBERTONHERVE AJ
Citation: P. Paillet et al., X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS, IEEE transactions on nuclear science, 43(3), 1996, pp. 821-825
POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY
Authors: CHABRERIE C MUSSEAU O FLAMENT O LERAY JL BOUDENOT JC SHIPMAN B CALLEWAERT H
Citation: C. Chabrerie et al., POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY, IEEE transactions on nuclear science, 43(3), 1996, pp. 826-830
RADIATION-INDUCED THERMALLY STIMULATED LUMINESCENCE AND CONDUCTIVITY IN SIMOX OXIDES
Authors: MARTINI M MEINARDI F ROSETTA E SPINOLO G VEDDA A LERAY JL PAILLET P AUTRAN JL DEVINE RAB
Citation: M. Martini et al., RADIATION-INDUCED THERMALLY STIMULATED LUMINESCENCE AND CONDUCTIVITY IN SIMOX OXIDES, IEEE transactions on nuclear science, 43(3), 1996, pp. 845-850
ELECTRICAL AND OPTICAL-RESPONSE OF A LASER-DIODE TO TRANSIENT IONIZING-RADIATION
Authors: BAGGIO J BRISSET C SOMMER JL DHOSE C LALANDE P LERAY JL MUSSEAU O
Citation: J. Baggio et al., ELECTRICAL AND OPTICAL-RESPONSE OF A LASER-DIODE TO TRANSIENT IONIZING-RADIATION, IEEE transactions on nuclear science, 43(3), 1996, pp. 1038-1043
ELECTRICAL-PROPERTIES OF TA2O5 FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING A TAF5 SOURCE
Authors: DEVINE RAB VALLIER L AUTRAN JL PAILLET P LERAY JL
Citation: Rab. Devine et al., ELECTRICAL-PROPERTIES OF TA2O5 FILMS OBTAINED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING A TAF5 SOURCE, Applied physics letters, 68(13), 1996, pp. 1775-1777
CONDUCTION PROPERTIES OF AMORPHOUS TA2O5 FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: AUTRAN JL PAILLET P LERAY JL DEVINE RAB
Citation: Jl. Autran et al., CONDUCTION PROPERTIES OF AMORPHOUS TA2O5 FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Sensors and actuators. A, Physical, 51(1), 1995, pp. 5-8
RADIATION EFFECTS ON SEMICONDUCTOR-MATERI ALS AND COMPONENTS
Authors: GAILLARD R LERAY JL MUSSEAU O LALANDE P
Citation: R. Gaillard et al., RADIATION EFFECTS ON SEMICONDUCTOR-MATERI ALS AND COMPONENTS, Onde electrique, 75(3), 1995, pp. 13-19
BURIED OXIDES - WHERE WE HAVE BEEN AND WHERE WE ARE GOING
Authors: LERAY JL
Citation: Jl. Leray, BURIED OXIDES - WHERE WE HAVE BEEN AND WHERE WE ARE GOING, Journal of non-crystalline solids, 187, 1995, pp. 10-22
COMPARISON OF X-RAY-INDUCED ELECTRON AND HOLE TRAPPING IN VARIOUS MATERIALS (YSZ, SIMOX, THERMAL SIO2)
Authors: PAILLET P GONON P SCHWEBEL C LERAY JL
Citation: P. Paillet et al., COMPARISON OF X-RAY-INDUCED ELECTRON AND HOLE TRAPPING IN VARIOUS MATERIALS (YSZ, SIMOX, THERMAL SIO2), Journal of non-crystalline solids, 187, 1995, pp. 170-174
Risultati: 1-25 | 26-40