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Results: 1-25/30
Authors:
Samori, C
Zanchi, A
Levantino, S
Lacaita, AL
Citation: C. Samori et al., A fully-integrated low-power low-noise 2.6-GHz bipolar VCO for wireless applications, IEEE MICR W, 11(5), 2001, pp. 199-201
Authors:
Zanchi, A
Samori, C
Lacaita, AL
Levantino, S
Citation: A. Zanchi et al., Impact of AAC design on phase noise performance of VCOs, IEEE CIR-II, 48(6), 2001, pp. 537-547
Authors:
Spinelli, AS
Pacelli, A
Lacaita, AL
Citation: As. Spinelli et al., An improved formula for the determination of the polysilicon doping, IEEE ELEC D, 22(6), 2001, pp. 281-283
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Modelli, A
Citation: D. Ielmini et al., A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories, MICROEL ENG, 59(1-4), 2001, pp. 189-195
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Martinelli, A
Ghidini, G
Citation: D. Ielmini et al., A recombination- and trap-assisted tunneling model for stress-induced leakage current, SOL ST ELEC, 45(8), 2001, pp. 1361-1369
Authors:
Ielmini, D
Spinelli, AS
Beretta, M
Lacaita, AL
Citation: D. Ielmini et al., Different types of defects in silicon dioxide characterized by their transient behavior, J APPL PHYS, 89(7), 2001, pp. 4189-4191
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
DiMaria, DJ
Ghidini, G
Citation: D. Ielmini et al., A detailed investigation of the quantum yield experiment, IEEE DEVICE, 48(8), 2001, pp. 1696-1702
Authors:
Pirovano, A
Lacaita, AL
Pacelli, A
Benvenuti, A
Citation: A. Pirovano et al., Novel low-temperature C-V technique for MOS doping profile determination near the Si/SiO2 interface, IEEE DEVICE, 48(4), 2001, pp. 750-757
Authors:
Spinelli, AS
Pacelli, A
Lacaita, AL
Citation: As. Spinelli et al., Polysilicon quantization effects on the electrical properties of MOS transistors (vol 47, pg 2266, 2000.), IEEE DEVICE, 48(3), 2001, pp. 609-609
Authors:
Zanchi, A
Samori, C
Levantino, S
Lacaita, AL
Citation: A. Zanchi et al., A 2-V 2.5-GHz-104-dBc/Hz at 100 kHz fully integrated VCO with wide-band low-noise automatic amplitude control loop, IEEE J SOLI, 36(4), 2001, pp. 611-619
Authors:
Giannini, M
Pacelli, A
Lacaita, AL
Perron, LM
Citation: M. Giannini et al., Effect of oxide tunneling on the measurement of MOS interface states, IEEE ELEC D, 21(8), 2000, pp. 405-407
Authors:
Pirovano, A
Lacaita, AL
Ghidini, G
Tallarida, G
Citation: A. Pirovano et al., On the correlation between surface roughness and inversion layer mobility in Si-MOSFET's, IEEE ELEC D, 21(1), 2000, pp. 34-36
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Martinelli, A
Ghidini, G
Citation: D. Ielmini et al., A recombination model for transient and stationary stress-induced leakage current, MICROEL REL, 40(4-5), 2000, pp. 703-706
Authors:
Ielmini, D
Spinelli, AS
Rigamonti, MA
Lacaita, AL
Citation: D. Ielmini et al., Modeling of SILC based on electron and hole tunneling - Part I: Transient effects, IEEE DEVICE, 47(6), 2000, pp. 1258-1265
Authors:
Ielmini, D
Spinelli, AS
Rigamonti, MA
Lacaita, AL
Citation: D. Ielmini et al., Modeling of SILC based on electron and hole tunneling - Part II: Steady-state, IEEE DEVICE, 47(6), 2000, pp. 1266-1272
Authors:
Pirovano, A
Lacaita, AL
Zandler, G
Oberhuber, R
Citation: A. Pirovano et al., Explaining the dependences of the hole and electron mobilities in Si inversion layers, IEEE DEVICE, 47(4), 2000, pp. 718-724
Authors:
Spinelli, AS
Pacelli, A
Lacaita, AL
Citation: As. Spinelli et al., Polysilicon quantization effects on the electrical properties of MOS transistors, IEEE DEVICE, 47(12), 2000, pp. 2366-2371
Authors:
Stellari, F
Lacaita, AL
Citation: F. Stellari et Al. Lacaita, New formulas of interconnect capacitances based on results of conformal mapping method, IEEE DEVICE, 47(1), 2000, pp. 222-231
Authors:
Samori, C
Lacaita, AL
Zanchi, A
Levantino, S
Cali, G
Citation: C. Samori et al., Phase noise degradation at high oscillation amplitudes in LC-tuned VCO's, IEEE J SOLI, 35(1), 2000, pp. 96-99
Authors:
Ielmini, D
Spinelli, AS
Lacaita, AL
Citation: D. Ielmini et al., Experimental evidence for recombination-assisted leakage in thin oxides, APPL PHYS L, 76(13), 2000, pp. 1719-1721
Double-index averaging: A novel technique for dynamic element matching in Sigma-Delta A/D converters
Authors:
Cini, D
Samori, C
Lacaita, AL
Citation: D. Cini et al., Double-index averaging: A novel technique for dynamic element matching in Sigma-Delta A/D converters, IEEE CIR-II, 46(4), 1999, pp. 353-358
Authors:
Araya, S
Yamasaki, K
Ueno, H
Mori, N
Hamaguchi, C
Perron, LM
Lacaita, AL
Citation: S. Araya et al., Monte Carlo simulation of conductance characteristics in SOI-MOSFET, PHYSICA B, 272(1-4), 1999, pp. 565-567
Authors:
Spinelli, AS
Benvenuti, A
Villa, S
Lacaita, AL
Citation: As. Spinelli et al., MOSFET simulation with quantum effects and nonlocal mobility model, IEEE ELEC D, 20(6), 1999, pp. 298-300
Authors:
Spinelli, AS
Lacaita, AL
Rigamonti, M
Ghidini, G
Citation: As. Spinelli et al., Experimental method for the determination of the energy distribution of stress-induced oxide traps, IEEE ELEC D, 20(3), 1999, pp. 106-108
Authors:
Spinelli, AS
Lacaita, AL
Rigamonti, M
Ielmini, D
Ghidini, G
Citation: As. Spinelli et al., Separation of electron and hole traps by transient current analysis, MICROEL ENG, 48(1-4), 1999, pp. 151-154