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Results: 1-25 | 26-37
Results: 1-25/37
The effect of low-energy ion bombardment on the density and crystal structure of thin films
Authors: Naumov, VV Bochkarev, VF Trushin, OS Goryachev, AA Khasanov, EG Lebedev, AA Kunitsyn, AS
Citation: Vv. Naumov et al., The effect of low-energy ion bombardment on the density and crystal structure of thin films, TECH PHYS, 46(8), 2001, pp. 1020-1025
Radiation hardness of SiC ion detectors under relativistic protons
Authors: Ivanov, AM Strokan, NB Davydov, DV Savkina, NS Lebedev, AA Mironov, YT Ryabov, GA Ivanov, EM
Citation: Am. Ivanov et al., Radiation hardness of SiC ion detectors under relativistic protons, SEMICONDUCT, 35(4), 2001, pp. 481-484
Effect of structural imperfection on the spectrum of deep levels in 6H-SiC
Authors: Lebedev, AA Davydov, DV Tregubova, AS Bogdanova, EV Shcheglov, MP Pavlenko, MV
Citation: Aa. Lebedev et al., Effect of structural imperfection on the spectrum of deep levels in 6H-SiC, SEMICONDUCT, 35(12), 2001, pp. 1372-1374
The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype
Authors: Davydov, SY Lebedev, AA Posrednik, OV Tairov, YM
Citation: Sy. Davydov et al., The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype, SEMICONDUCT, 35(12), 2001, pp. 1375-1377
Some aspects of SiC CVD epitaxy
Authors: Zelenin, VV Korogodskii, ML Lebedev, AA
Citation: Vv. Zelenin et al., Some aspects of SiC CVD epitaxy, SEMICONDUCT, 35(10), 2001, pp. 1117-1119
The effect of CVD growth conditions of 6H-SiC epilayers on Al incorporation
Authors: Zelenin, VV Korogodskii, ML Lebedev, AA
Citation: Vv. Zelenin et al., The effect of CVD growth conditions of 6H-SiC epilayers on Al incorporation, SEMICONDUCT, 35(10), 2001, pp. 1120-1122
Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum
Authors: Sorokin, LM Tregubova, AS Shcheglov, MP Lebedev, AA Savkina, NS
Citation: Lm. Sorokin et al., Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum, PHYS SOL ST, 42(8), 2000, pp. 1422-1426
Radiation defects in n-4H-SiC irradiated with 8-MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-4H-SiC irradiated with 8-MeV protons, SEMICONDUCT, 34(9), 2000, pp. 1016-1020
Radiation defects in n-6H-SiC irradiated with 8 MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-6H-SiC irradiated with 8 MeV protons, SEMICONDUCT, 34(8), 2000, pp. 861-866
Effect of uniaxial deformation on electrophysical parameters of 6H-SiC p-nstructures
Authors: Lebedev, AA
Citation: Aa. Lebedev, Effect of uniaxial deformation on electrophysical parameters of 6H-SiC p-nstructures, SEMICONDUCT, 34(5), 2000, pp. 538-540
6H-SiC epilayers as nuclear particle detectors
Authors: Lebedev, AA Savkina, NS Ivanov, AM Strokan, NB Davydov, DV
Citation: Aa. Lebedev et al., 6H-SiC epilayers as nuclear particle detectors, SEMICONDUCT, 34(2), 2000, pp. 243-249
Special features of alpha-particle detection with thin semi-insulating 6H-SiC films
Authors: Strokan, NB Lebedev, AA Ivanov, AM Davydov, DV Kozlovskii, VV
Citation: Nb. Strokan et al., Special features of alpha-particle detection with thin semi-insulating 6H-SiC films, SEMICONDUCT, 34(12), 2000, pp. 1386-1390
Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
Authors: Lebedev, AA Davydov, DV Savkina, NS Tregubova, AS Shcheglov, MP Yakimova, R Syvajarvi, M Janzen, E
Citation: Aa. Lebedev et al., Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum, SEMICONDUCT, 34(10), 2000, pp. 1133-1136
Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage
Authors: Lebedev, AA Lebedev, AA Davydov, DV
Citation: Aa. Lebedev et al., Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage, SEMICONDUCT, 34(1), 2000, pp. 115-118
Crystal structure of decameric 2-Cys peroxiredoxin from human erythrocytesat 1.7 angstrom resolution
Authors: Schroder, E Littlechild, JA Lebedev, AA Errington, N Vagin, AA Isupov, MN
Citation: E. Schroder et al., Crystal structure of decameric 2-Cys peroxiredoxin from human erythrocytesat 1.7 angstrom resolution, STRUCT F D, 8(6), 2000, pp. 605-615
Crystal structure of decameric 2-Cys peroxiredoxin from human erythrocytesat 1.7 angstrom resolution (vol 8, pg 605, 2000)
Authors: Schroder, E Littlechild, JA Lebedev, AA Errington, N Vagin, AA Isupov, MN
Citation: E. Schroder et al., Crystal structure of decameric 2-Cys peroxiredoxin from human erythrocytesat 1.7 angstrom resolution (vol 8, pg 605, 2000), STRUCTURE, 8(12), 2000, pp. NIL_5-NIL_5
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Raynaud, C Chante, JP Locatelli, ML Planson, D Milan, J Godignon, P Campos, FJ Mestres, N Pascual, J Brezeanu, G Badila, M
Citation: Ns. Savkina et al., Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy, MAT SCI E B, 77(1), 2000, pp. 50-54
Influence of phase transformations on the mechanical properties of austenitic stainless steels
Authors: Lebedev, AA Kosarchuk, VV
Citation: Aa. Lebedev et Vv. Kosarchuk, Influence of phase transformations on the mechanical properties of austenitic stainless steels, INT J PLAST, 16(7-8), 2000, pp. 749-767
Doping of n-type 6H-SiC and 4H-SiC with defects created with a proton beam
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovski, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Doping of n-type 6H-SiC and 4H-SiC with defects created with a proton beam, J APPL PHYS, 88(11), 2000, pp. 6265-6271
Wide-gap semiconductors for high-power electronics
Authors: Lebedev, AA Chelnokov, VE
Citation: Aa. Lebedev et Ve. Chelnokov, Wide-gap semiconductors for high-power electronics, SEMICONDUCT, 33(9), 1999, pp. 999-1001
Irradiation as a possible method for producing SiC heterostructures
Authors: Lebedev, AA
Citation: Aa. Lebedev, Irradiation as a possible method for producing SiC heterostructures, SEMICONDUCT, 33(9), 1999, pp. 1004-1006
Investigation of the effect of surface treatment of a semiconductor on thecharacteristics of 6H-SiC Schottky diodes
Authors: Lebedev, AA Davydov, DV Zelenin, VV Korogodskii, ML
Citation: Aa. Lebedev et al., Investigation of the effect of surface treatment of a semiconductor on thecharacteristics of 6H-SiC Schottky diodes, SEMICONDUCT, 33(8), 1999, pp. 875-876
Influence of native defects on polytypism in SiC
Authors: Lebedev, AA
Citation: Aa. Lebedev, Influence of native defects on polytypism in SiC, SEMICONDUCT, 33(7), 1999, pp. 707-709
Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors
Authors: Astrova, EV Voronkov, VB Lebedev, AA Lodygin, AN Remenyuk, AD
Citation: Ev. Astrova et al., Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors, SEMICONDUCT, 33(3), 1999, pp. 359-365
Deep level centers in silicon carbide: A review
Authors: Lebedev, AA
Citation: Aa. Lebedev, Deep level centers in silicon carbide: A review, SEMICONDUCT, 33(2), 1999, pp. 107-130
Risultati: 1-25 | 26-37