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Results: 1-25 | 26-50 |
Results: 26-50/50
CHALLENGES FOR PREDICTIVE PROCESS SIMULATION IN SUB 0.1 MU-M SILICON DEVICES
Authors: PLUMMER JD GRIFFIN PB
Citation: Jd. Plummer et Pb. Griffin, CHALLENGES FOR PREDICTIVE PROCESS SIMULATION IN SUB 0.1 MU-M SILICON DEVICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 160-166
MODELING THE DIFFUSION OF GROWN-IN BE IN MOLECULAR-BEAM EPITAXY GAAS
Authors: HU JC DEAL MD PLUMMER JD
Citation: Jc. Hu et al., MODELING THE DIFFUSION OF GROWN-IN BE IN MOLECULAR-BEAM EPITAXY GAAS, Journal of applied physics, 78(3), 1995, pp. 1595-1605
MODELING THE DIFFUSION OF IMPLANTED BE IN GAAS
Authors: HU JC DEAL MD PLUMMER JD
Citation: Jc. Hu et al., MODELING THE DIFFUSION OF IMPLANTED BE IN GAAS, Journal of applied physics, 78(3), 1995, pp. 1606-1613
STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION
Authors: CAO M ZHAO TM SARASWAT KC PLUMMER JD
Citation: M. Cao et al., STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1134-1140
PERFORMANCE OF THE 3-D PENCIL FLASH EPROM CELL AND MEMORY ARRAY
Authors: PEIN H PLUMMER JD
Citation: H. Pein et Jd. Plummer, PERFORMANCE OF THE 3-D PENCIL FLASH EPROM CELL AND MEMORY ARRAY, I.E.E.E. transactions on electron devices, 42(11), 1995, pp. 1982-1991
VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC
Authors: LAWTHER DW MYLER U SIMPSON PJ ROUSSEAU PM GRIFFIN PB PLUMMER JD
Citation: Dw. Lawther et al., VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC, Applied physics letters, 67(24), 1995, pp. 3575-3577
REMOVING CRYPTOSPORIDIUM BY DISSOLVED-AIR FLOTATION
Authors: PLUMMER JD EDZWALD JK KELLEY MB
Citation: Jd. Plummer et al., REMOVING CRYPTOSPORIDIUM BY DISSOLVED-AIR FLOTATION, Journal - American Water Works Association, 87(9), 1995, pp. 85-95
HIGH-MOBILITY SI1-XGEX PMOS TRANSISTORS TO 5K
Authors: SCOTT JA CROKE ET PLUMMER JD
Citation: Ja. Scott et al., HIGH-MOBILITY SI1-XGEX PMOS TRANSISTORS TO 5K, Journal de physique. IV, 4(C6), 1994, pp. 69-74
A SIMPLE EEPROM CELL USING TWIN POLYSILICON THIN-FILM TRANSISTORS
Authors: CAO M ZHAO TM SARASWAT KC PLUMMER JD
Citation: M. Cao et al., A SIMPLE EEPROM CELL USING TWIN POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 15(8), 1994, pp. 304-306
MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS
Authors: NGUYEN CT VERPLOEG EP KUEHNE SC PLUMMER JD WONG SS RENTELN P
Citation: Ct. Nguyen et al., MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS, IEEE electron device letters, 15(4), 1994, pp. 132-134
A VERTICAL SUBMICRON POLYSILICON THIN-FILM-TRANSISTOR USING A LOW-TEMPERATURE PROCESS
Authors: ZHAO TM CAO M SARASWAT KC PLUMMER JD
Citation: Tm. Zhao et al., A VERTICAL SUBMICRON POLYSILICON THIN-FILM-TRANSISTOR USING A LOW-TEMPERATURE PROCESS, IEEE electron device letters, 15(10), 1994, pp. 415-417
A PROTOTYPE MONOLITHIC PIXEL DETECTOR
Authors: KENNEY CJ PARKER SI PETERSON VZ SNOEYS WJ PLUMMER JD AW CH
Citation: Cj. Kenney et al., A PROTOTYPE MONOLITHIC PIXEL DETECTOR, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 342(1), 1994, pp. 59-77
EFFECT OF BURIED SI-SIO2 INTERFACES ON OXIDATION AND IMPLANT-ENHANCEDDOPANT DIFFUSION IN THIN SILICON-ON-INSULATOR FILMS
Authors: CROWDER SW HSIEH CJ GRIFFIN PB PLUMMER JD
Citation: Sw. Crowder et al., EFFECT OF BURIED SI-SIO2 INTERFACES ON OXIDATION AND IMPLANT-ENHANCEDDOPANT DIFFUSION IN THIN SILICON-ON-INSULATOR FILMS, Journal of applied physics, 76(5), 1994, pp. 2756-2764
PIN DETECTOR ARRAYS AND INTEGRATED READOUT CIRCUITRY ON HIGH-RESISTIVITY FLOAT-ZONE SILICON
Authors: SNOEYS W PLUMMER JD PARKER S KENNEY C
Citation: W. Snoeys et al., PIN DETECTOR ARRAYS AND INTEGRATED READOUT CIRCUITRY ON HIGH-RESISTIVITY FLOAT-ZONE SILICON, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 903-912
PARASITIC BIPOLAR GAIN IN FULLY DEPLETED N-CHANNEL SOI MOSFETS
Authors: VERPLOEG EP NGUYEN CT WONG SS PLUMMER JD
Citation: Ep. Verploeg et al., PARASITIC BIPOLAR GAIN IN FULLY DEPLETED N-CHANNEL SOI MOSFETS, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 970-977
DISPERSION OF MOS CAPACITANCE-VOLTAGE CHARACTERISTICS RESULTING FROM THE RANDOM CHANNEL DOPANT ION DISTRIBUTION
Authors: WATT JT PLUMMER JD
Citation: Jt. Watt et Jd. Plummer, DISPERSION OF MOS CAPACITANCE-VOLTAGE CHARACTERISTICS RESULTING FROM THE RANDOM CHANNEL DOPANT ION DISTRIBUTION, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2222-2232
OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN HEAVILY-DOPEDLAYERS IN SILICON
Authors: ROTH DJ PLUMMER JD
Citation: Dj. Roth et Jd. Plummer, OXIDATION-ENHANCED DIFFUSION OF BORON AND PHOSPHORUS IN HEAVILY-DOPEDLAYERS IN SILICON, Journal of the Electrochemical Society, 141(4), 1994, pp. 1074-1081
ELECTRICAL DEACTIVATION OF ARSENIC AS A SOURCE OF POINT-DEFECTS
Authors: ROUSSEAU PM GRIFFIN PB PLUMMER JD
Citation: Pm. Rousseau et al., ELECTRICAL DEACTIVATION OF ARSENIC AS A SOURCE OF POINT-DEFECTS, Applied physics letters, 65(5), 1994, pp. 578-580
CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY
Authors: CROWDER SW GRIFFIN PB PLUMMER JD
Citation: Sw. Crowder et al., CHARACTERIZATION OF INTERFACE TOPOGRAPHY OF THE BURIED SI-SIO2 INTERFACE IN SILICON-ON-INSULATOR MATERIAL BY ATOMIC-FORCE MICROSCOPY, Applied physics letters, 65(13), 1994, pp. 1698-1699
OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL
Authors: CROWDER SW GRIFFIN PB HSIEH CJ WEI GY PLUMMER JD ALLEN LP
Citation: Sw. Crowder et al., OXIDATION ENHANCED DOPANT DIFFUSION IN SEPARATION BY IMPLANTATION BY OXYGEN SILICON-ON-INSULATOR MATERIAL, Applied physics letters, 64(24), 1994, pp. 3264-3266
DOPING AND DAMAGE DOSE DEPENDENCE OF IMPLANT INDUCED TRANSIENT ENHANCED DIFFUSION BELOW THE AMORPHIZATION THRESHOLD
Authors: GRIFFIN PB LEVER RF PACKAN PA PLUMMER JD
Citation: Pb. Griffin et al., DOPING AND DAMAGE DOSE DEPENDENCE OF IMPLANT INDUCED TRANSIENT ENHANCED DIFFUSION BELOW THE AMORPHIZATION THRESHOLD, Applied physics letters, 64(10), 1994, pp. 1242-1244
A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY
Authors: PEIN H PLUMMER JD
Citation: H. Pein et Jd. Plummer, A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY, IEEE electron device letters, 14(8), 1993, pp. 415-417
A NEW MOSFET OUTPUT CONDUCTANCE MEASUREMENT TECHNIQUE
Authors: AKRAM MF PLUMMER JD SHOTT JD
Citation: Mf. Akram et al., A NEW MOSFET OUTPUT CONDUCTANCE MEASUREMENT TECHNIQUE, IEEE transactions on instrumentation and measurement, 42(5), 1993, pp. 893-898
A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY
Authors: PEIN H PLUMMER JD
Citation: H. Pein et Jd. Plummer, A 3-D SIDEWALL FLASH EPROM CELL AND MEMORY ARRAY, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2126-2127
SILICON INTERSTITIAL ABSORPTION DURING THERMAL-OXIDATION AT 900 DEGREES-C BY EXTENDED DEFECTS FORMED VIA SILICON IMPLANTATION
Authors: ROTH DJ HUANG RYS PLUMMER JD DUTTON RW
Citation: Dj. Roth et al., SILICON INTERSTITIAL ABSORPTION DURING THERMAL-OXIDATION AT 900 DEGREES-C BY EXTENDED DEFECTS FORMED VIA SILICON IMPLANTATION, Applied physics letters, 62(20), 1993, pp. 2498-2500
Risultati: 1-25 | 26-50 |