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Results: 1-25 | 26-47
Results: 1-25/47
STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES
Authors: ANDREEV AN SMIRNOVA NY TREGUBOVA AS SHCHEGLOV MP CHELNOKOV VE
Citation: An. Andreev et al., STRUCTURAL PERFECTION OF EPITAXIAL LAYERS OF 3C-SIC GROWN BY VACUUM SUBLIMATION ON 6H-SIC SUBSTRATES, Semiconductors, 31(3), 1997, pp. 232-236
OVERVIEW OF SIC POWER ELECTRONICS
Authors: CHELNOKOV VE SYRKIN AL DMITRIEV VA
Citation: Ve. Chelnokov et al., OVERVIEW OF SIC POWER ELECTRONICS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1480-1484
INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION
Authors: ANDREEV AN TREGUBOVA AS SCHEGLOV MP SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., INFLUENCE OF GROWTH-CONDITIONS ON THE STRUCTURAL PERFECTION OF BETA-SIC EPITAXIAL LAYERS FABRICATED ON 6H-SIC SUBSTRATES BY VACUUM SUBLIMATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 141-146
SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES
Authors: SYRKIN AL BLUET JM BASTIDE G BRETAGNON T LEBEDEV AA RASTEGAEVA MG SAVKINA NS CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 236-239
HIGH-TEMPERATURE ELECTRONICS USING SIC - ACTUAL SITUATION AND UNSOLVED PROBLEMS
Authors: CHELNOKOV VE SYRKIN AL
Citation: Ve. Chelnokov et Al. Syrkin, HIGH-TEMPERATURE ELECTRONICS USING SIC - ACTUAL SITUATION AND UNSOLVED PROBLEMS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 248-253
GROWTH AND INVESTIGATION OF THE BIG AREA LELY-GROWN SUBSTRATES
Authors: LEBEDEV AA TREGUBOVA AS CHELNOKOV VE SCHEGLOV MP GLAGOVSKII AA
Citation: Aa. Lebedev et al., GROWTH AND INVESTIGATION OF THE BIG AREA LELY-GROWN SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 291-295
GROWTH AND INVESTIGATION OF EPITAXIAL 6H-SIC LAYERS OBTAINED BY CVD ON LELY-GROWN SUBSTRATES
Authors: ZELENIN VV LEBEDEV AA STAROBINETS SM CHELNOKOV VE
Citation: Vv. Zelenin et al., GROWTH AND INVESTIGATION OF EPITAXIAL 6H-SIC LAYERS OBTAINED BY CVD ON LELY-GROWN SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 300-303
EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTOLUMINESCENCE PROPERTIES OF A-C-H FILMS
Authors: VASILEV BA TERUKOV EI TRAPEZNIKOVA IN CHELNOKOV VE
Citation: Ba. Vasilev et al., EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTOLUMINESCENCE PROPERTIES OF A-C-H FILMS, Semiconductors, 30(9), 1996, pp. 849-850
INFLUENCE OF VAPOR-PHASE COMPOSITION IN A GROWTH CELL ON THE DOPING LEVEL OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN BY VACUUM SUBLIMATION
Authors: ANDREEV AN SMIRNOVA NY SHCHEGLOV MP RASTEGAEVA MG CHELNOKOV VE RASTEGAEV VP
Citation: An. Andreev et al., INFLUENCE OF VAPOR-PHASE COMPOSITION IN A GROWTH CELL ON THE DOPING LEVEL OF SILICON-CARBIDE EPITAXIAL LAYERS GROWN BY VACUUM SUBLIMATION, Semiconductors, 30(11), 1996, pp. 1074-1077
6H-SIC DIODES FABRICATED BY COMBINED CHEMICAL-VAPOR-DEPOSITION AND SUBLIMATION EPITAXY
Authors: LEBEDEV AA MALTSEV AA POLETAEV NK RASTEGAEVA MG SAVKINA NS STRELCHUK AM CHELNOKOV VE
Citation: Aa. Lebedev et al., 6H-SIC DIODES FABRICATED BY COMBINED CHEMICAL-VAPOR-DEPOSITION AND SUBLIMATION EPITAXY, Semiconductors, 30(10), 1996, pp. 944-945
EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES
Authors: ORTOLLAND S RAYNAUD C CHANTE JP LOCATELLI ML LEBEDEV AA ANDREEV AN SAVKINA NS CHELNOKOV VE RASTEGAEVA MG SYRKIN AL
Citation: S. Ortolland et al., EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES, Journal of applied physics, 80(9), 1996, pp. 5464-5468
FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES
Authors: LEBEDEV AA ANDREEV AN MALTSEV AA RASTEGAEVA WG SAVKINA NS CHELNOKOV VE
Citation: Aa. Lebedev et al., FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES, Semiconductors, 29(9), 1995, pp. 850-853
6H-SIC FIELD-EFFECT TRANSISTOR WITH SCHOTTKY-DIODE GATE
Authors: LEBEDEV AA ANIKIN MM KUZNETSOV AN RASTEGAEVA MG SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Aa. Lebedev et al., 6H-SIC FIELD-EFFECT TRANSISTOR WITH SCHOTTKY-DIODE GATE, Semiconductors, 29(7), 1995, pp. 636-638
STUDY OF SIC-6H DINISTOR STRUCTURES
Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE
Citation: An. Andreev et al., STUDY OF SIC-6H DINISTOR STRUCTURES, Semiconductors, 29(6), 1995, pp. 561-565
GROWTH OF EPITAXIAL-FILMS OF SIC BY CHEMICAL-VAPOR-DEPOSITION IN THE CH3SICL3-H-2 SYSTEM
Authors: ZELENIN VV SOLOVEV VG STAROBINETS SM KONNIKOV SG CHELNOKOV VE
Citation: Vv. Zelenin et al., GROWTH OF EPITAXIAL-FILMS OF SIC BY CHEMICAL-VAPOR-DEPOSITION IN THE CH3SICL3-H-2 SYSTEM, Semiconductors, 29(6), 1995, pp. 581-583
STUDY OF SURFACE-STATES AT A SIO2-SIC INTERFACE THROUGH ANALYSIS OF THE INPUT ADMITTANCE OF AN MOS STRUCTURE OVER A BROAD TEMPERATURE-RANGE
Authors: IVANOV PA PANTELEEV VN SAMSONOVA TP CHELNOKOV VE
Citation: Pa. Ivanov et al., STUDY OF SURFACE-STATES AT A SIO2-SIC INTERFACE THROUGH ANALYSIS OF THE INPUT ADMITTANCE OF AN MOS STRUCTURE OVER A BROAD TEMPERATURE-RANGE, Semiconductors, 29(2), 1995, pp. 135-137
SEMICONDUCTOR SILICON-CARBIDE - TECHNOLOGY AND DEVICES - A REVIEW
Authors: IVANOV PA CHELNOKOV VE
Citation: Pa. Ivanov et Ve. Chelnokov, SEMICONDUCTOR SILICON-CARBIDE - TECHNOLOGY AND DEVICES - A REVIEW, Semiconductors, 29(11), 1995, pp. 1003-1013
ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD
Authors: ANDREEV AN TREGUBOVA AS SHCHEGLOV MP RASTEGAEV VP DOROZHKIN SI CHELNOKOV VE
Citation: An. Andreev et al., ANOMALIES IN THE STRUCTURAL PERFECTION OF SIC-6H CRYSTALS GROWN BY THE MODIFIED LELY METHOD, Semiconductors, 29(10), 1995, pp. 955-956
BARRIER HEIGHT IN N-SIC-6H BASED SCHOTTKY DIODES
Authors: ANDREEV AN LEBEDEV AA RASTEGAEVA MG SNEGOV FM SYRKIN AL CHELNOKOV VE SHESTOPALOVA LN
Citation: An. Andreev et al., BARRIER HEIGHT IN N-SIC-6H BASED SCHOTTKY DIODES, Semiconductors, 29(10), 1995, pp. 957-962
HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V
Authors: ANDREEV AN ANIKIN MM ZELENIN VV IVANOV PA LEBEDEV AA RASTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE SILICON-CARBIDE STABILITRONS FOR THE VOLTAGE RANGE FROM 4-V TO 50-V, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 190-193
HIGH-TEMPERATURE 6H-SIC DINISTOR
Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE
Citation: An. Andreev et al., HIGH-TEMPERATURE 6H-SIC DINISTOR, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 194-197
SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES
Authors: SYRKIN AL ANDREEV AN LEBEDEV AA RASTEGAEVA MG CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL N-6H-SIC STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 198-201
FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H
Authors: ANDREEV AN LEBEDEV AA ZELENIN VV MALTSEV AA PASTEGAEVA MG SAVKINA NS SOKOLOVA TV CHELNOKOV VE
Citation: An. Andreev et al., FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H, Pis'ma v Zurnal tehniceskoj fiziki, 21(4), 1995, pp. 60-64
PROPERTIES OF SILICON-CARBIDE EPITAXIAL L AYERS GROWN BY CHEMICAL-DEPOSIT ION FROM GAS-PHASE IN METHYLTRICHLOROSILANE-HYDROGEN SYSTEM
Authors: IVANOV PA ZELENIN VV DANISHEVSKII AM STAROBINETS SG CHELNOKOV VE
Citation: Pa. Ivanov et al., PROPERTIES OF SILICON-CARBIDE EPITAXIAL L AYERS GROWN BY CHEMICAL-DEPOSIT ION FROM GAS-PHASE IN METHYLTRICHLOROSILANE-HYDROGEN SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 21(3), 1995, pp. 1-9
CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE
Authors: STRELCHUK AM ANIKIN MM ANDREEV AN ZELENIN VV LEBEDEV AA RASTEGAEVA MG SAVKINA NS SYRKIN AP CHELNOKOV VE SHESTOPALOVA LN
Citation: Am. Strelchuk et al., CHARACTERISTICS OF SIC VOLTAGE STABILIZER S FOR 20-300-DEGREES-C TEMPERATURE-RANGE, Zurnal tehniceskoj fiziki, 65(8), 1995, pp. 98-103
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